Half-pitch 4-ch Transistor Photocouplers
(Reference)
Toshiba Corporation Semiconductor Company
Optoelectronics Device Marketing & Engineering Group 1
Copyright 2010, Toshiba Corporation. (HOC-1191)
■Transistor Photocouplers （Half-pitch, 4-ch）
Comparison between new product and existing product Reference
Characteristic TLP290-4 / TLP291-4
(
New product
)
TLP280-4 / TLP281-4
(
Existin
g
product
)
◆Construction Comparison
()
(g )
Internal construction
(Transmissiv e type in double-molded packages) (Reflective ty pe in single-molded packages)
4.55 +0.25,-0.15 4.4 ±0.25
Overall dimensions
（mm) 2.3
(max) 2.1
(max)
Creepage/clearance
distance (mm) 5.0 (min) 4.0 (min)
Isolation thickness
7.0 ±0.4 7.0 ±0.4
2
TOSHIBA CORPORATION Semiconductor Company(HOC-1297)
Isolation
thickness
(mm) 0.4 (min) 0.4 (min)
2011/04/01
■Comparison of Package Dimensions Reference
<Product dimensions>
Please confirm that no
Taller than TLP281-4
Please
confirm
that
no
problems pertaining to the
height and width of the
product will occur before
usage.
2.1mm(MAX)2.3mm(MAX)
Same lead width between LED
and detector sides despite
increase in package width
increase
in
package
width
.
Same land pattern.
3
TOSHIBA CORPORATION Semiconductor Company(HOC-1297) 2011/04/01
■Comparison of Absolute Maximum Ratings
★
Increase in guaranteed operating temperature range:
100
Ԩ
MAX
֜
110
Ԩ
MAX
Reference
★
Increase
in
guaranteed
operating
temperature
range:
100
Ԩ
MAX
֜
110
Ԩ
MAX
..
Absolute Maximum Ratings（Ta=25Ԩ）
Characteristics Symbol Unit TLP281-4 TLP291-4*
Fd t
IF
A
50
50
F
orwar
d
curren
t
IF
m
A
50
50
Pulse forward current (Note 1) IFP A 1 1
Reverse voltage VR V 5 5
Collector-emitter voltage VCEO V 80 80
Emitter
-
collector voltage
VECO
V
7
7
Emitter collector
voltage
VECO
V
7
7
Collector current Ic mA 50 50
Output power dissipation Pc mW 100 100
Output power dissipation derating
(Ta ≥ 25℃)
℃
100
110
⊿Pc/℃ mW/℃ -1 -1
Operating temperature range Top
r
℃
-55 to
100
-55 to
110
Storage temperature range Tstg ℃ -55 to 125 -55 to 125
Lead solder temperature Tsol ℃ 260(10s) 260(10s)
Total package power dissipation
（per ch）
PT mW 170 170
＊New product
（per
ch）
Total package power dissipation
(Ta ≥ 25℃)（per ch）
Isolation voltage (Note 2） BVｓ Vrms 2500 2500
⊿PT/℃ mW/℃ -1.7 -1.7
4
TOSHIBA CORPORATION Semiconductor Company(HOC-1297)
Note 1: Pulse width ≤ 100 μs, frequency = 100Hz
Note 2: AC, 1 min, R.H.≤60%。LED pins and detector pins are shorted respectively.
2011/04/01
■Comparison of Main Characteristics Reference
Electrical characteristics (Ta=25Ԩ)
Test conditions
Characteristic
Symbol
Unit
TLP281-4 TLP291-4*
Min Typ Max Min Typ Max
Forward current VF V 1 1.15 1.3 1.1 1.2 1.4 TOSHIBA : IF=10mA,
Renesas : IF=5mA
Reverse current IR μA － － 10 － － 10 VR=5V
Test
conditions
Characteristic
Symbol
Unit
Collector dark current ICEO μA － 0.01 0.1 － 0.01 0.1 TOSHIBA : VCE=48V,
Renesas : VCE=80V
Current transfer ratio (CTR) IC/IF ％ 50 600 50 400 IF=5mA, VCE=5V
Saturated CTR IC/IF(sat) ％ - 60 - － 60 - IF=1mA, VCE=0.4V
C ll t itt t ti lt
VCE( t)
V
02
04
TOSHIBA : IC=2.4mA
,
IF=8mA
＊New product
C
o
ll
ec
t
or-em
itt
er sa
t
ura
ti
on vo
lt
age
VCE(
sa
t)
V
-
0
.
2
-－－
0
.
4
,
Renesas : IC=2mA, IF=10mA
Off-state collector current Ic(off) μA - - 10 - - 10 VF=0.7V, VCE=48V
5
TOSHIBA CORPORATION Semiconductor Company(HOC-1297) 2011/04/01
