IXFN240N25X3 - LITTELFUSE

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25C to 150C 250 V

VDGR TJ= 25C to 150C, RGS = 1M250 V

VGSS Continuous  20 V

VGSM Transient  30 V

ID25 TC= 25C (Chip Capability) 240 A

IL(RMS) External Lead Current Limit 200 A

IDM TC= 25C, Pulse Width Limited by TJM 600 A

IATC= 25C 200 A

EAS TC= 25C3J

PDTC= 25C 695 W

dv/dt IS IDM, VDD  VDSS, TJ  150°C 20 V/ns

TJ-55 ... +150 C

TJM 150 C

Tstg -55 ... +150 C

VISOL 50/60 Hz, RMS t = 1 minute 2500 V~

IISOL  1mA t = 1 second 3000 V~

Md Mounting Torque 1.5/13 Nm/lb.in

Terminal Connection Torque 1.3/11.5 Nm/lb.in

Weight 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 250 V

VGS(th) VDS = VGS, ID = 8mA 2.5 4.5 V

IGSS VGS =  20V, VDS = 0V 200 nA

IDSS VDS = VDSS, VGS = 0V 25 A

TJ = 125C 2.5 mA

RDS(on) VGS = 10V, ID = 120A, Note 1 3.5 4.5 m

IXFN240N25X3 VDSS = 250V

ID25 = 240A

RDS(on) 



 4.5m





DS100841B(9/18)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

X3-Class HiPerFETTM

Power MOSFET

Features

International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

Isolation Voltage 2500V~

High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low RDS(on)

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

miniBLOC, SOT-227



E153432

G

D

S

G = Gate D = Drain

S = Source

S

D

G

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN240N25X3

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max

ISVGS = 0V 240 A

ISM Repetitive, pulse Width Limited by TJM 960 A

VSD IF = 100A, VGS = 0V, Note 1 1.4 V

trr 165 ns

QRM 3.7 μC

IRM 45.6 A

IF = 120A, -di/dt = 100A/μs

VR = 100V

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max

gfs VDS = 10V, ID = 60A, Note 1 80 135 S

RGi Gate Input Resistance 1.8 

Ciss 23.8 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 3.7 nF

Crss 1.5 pF

Co(er) 1400 pF

Co(tr) 5480 pF

td(on) 36 ns

tr 32 ns

td(off) 180 ns

tf 14 ns

Qg(on) 345 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 120A 112 nC

Qgd 72 nC

RthJC 0.18 C/W

RthCS 0.05 C/W

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 120A

RG = 1(External)

Effective Output Capacitance

Energy related

Time related

VGS = 0V

VDS = 0.8 • VDSS

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXFN240N25X3

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

40

80

120

160

200

240

0 0.2 0.4 0.6 0.8 1 1.2

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

0

40

80

120

160

200

240

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

4V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 120A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 240A

I

D

= 120A

Fig. 5. R

DS(on)

Normalized to I

D

= 120A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 100 200 300 400 500 600 700 800 900 1000

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125

o

C

T

J

= 25

o

C

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

100

200

300

400

500

600

700

800

900

0 2 4 6 8 10121416182022

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

6V

8V

7V

9V

5V

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degrees Centigrade

BV

DSS

/ V

GS(th)

- Normalized

V

GS(th)

BV

DSS

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN240N25X3

Fig. 7. Maximum Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

180

200

220

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limi

t

Fig. 9. Transconductance

0

50

100

150

200

250

300

350

400

0 50 100 150 200 250 300 350

I

D

- Amperes

g

f s

- Siemens

25

o

C

125

o

C

T

J

= - 40

o

C

Fig. 10. Forward Voltage Drop of Intrinsic Diode

0

100

200

300

400

500

600

700

800

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

V

SD

- Volts

I

S

- Amperes

T

J

= 25

o

C

T

J

= 125

o

C

Fig. 11. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 50 100 150 200 250 300 350

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 125V

I

D

= 120A

I

G

= 10mA

Fig. 12. Capacitance

1

10

100

1,000

10,000

100,000

1 10 100 1,000

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 8. Input Admittance

0

50

100

150

200

250

300

350

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125

o

C

25

o

C

- 40

o

C

IXFN240N25X3

IXYS REF: F_240N25X3(29-S301) 6-02-17-A

Fig. 14. Maximum Transient Thermal Impedance

0.0001

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- K / W

Fig. 13. Forward-Bias Safe Operating Area

0.1

1

10

100

1000

1 10 100 1,000

V

DS

- Volts

I

D

- Amperes

TJ = 150oC

TC = 25oC

Single Pulse

1ms

100μs

RDS(

on

) Limit

10ms

DC

25μs

External Lead

Current Limit

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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.