Preliminary Technical Information IXFN240N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 G S 250V 240A 4.5m RDS(on) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = miniBLOC, SOT-227 E153432 S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 250 250 V V VGSS VGSM Continuous Transient 20 30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 240 200 600 A A A IA EAS TC = 25C TC = 25C 200 3 A J PD TC = 25C 695 W dv/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source D = Drain Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 250 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 120A, Note 1 V 4.5 V 200 nA 25 A 2.5 mA TJ = 125C (c) 2018 IXYS CORPORATION, All Rights Reserved. High Power Density Easy to Mount Space Savings 3.5 4.5 m Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100841B(9/18) IXFN240N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 80 RGi Gate Input Resistance Ciss Coss SOT-227B (IXFN) Outline 135 S 1.8 23.8 nF 3.7 nF 1.5 pF 1400 5480 pF pF 36 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 * VDSS VGS = 10V, VDS = 0.5 * VDSS, ID = 120A RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 120A Qgd 32 ns 180 ns 14 ns 345 nC 112 nC 72 nC (M4 screws (4x) supplied) 0.18 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 240 A ISM Repetitive, pulse Width Limited by TJM 960 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 120A, -di/dt = 100A/s 165 3.7 45.6 VR = 100V ns C A Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN240N25X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 240 900 VGS = 10V 8V VGS = 10V 200 7V 8V 700 160 600 I D - Amperes I D - Amperes 9V 800 6V 120 80 500 7V 400 300 5V 40 6V 200 100 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 VDS - Volts 240 2.4 VGS = 10V 8V 14 16 18 20 22 VGS = 10V 7V RDS(on) - Normalized 2.0 160 I D - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 200 10 VDS - Volts 6V 120 5V 80 I D = 240A 1.6 I D = 120A 1.2 0.8 40 4V 0.4 0 0 3.5 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 2 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 3.0 o RDS(on) - Normalized -25 VDS - Volts TJ = 125 C 2.5 2.0 1.5 o TJ = 25 C 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.5 0.5 0 100 200 300 400 500 600 700 I D - Amperes (c) 2018 IXYS CORPORATION, All Rights Reserved. 800 900 1000 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN240N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 350 220 200 300 External Lead Current Limit 180 160 250 I D - Amperes I D - Amperes 140 120 100 80 200 150 o TJ = 125 C o 100 60 25 C o - 40 C 40 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 400 800 o TJ = - 40 C 350 700 600 o 25 C 250 200 I S - Amperes g f s - Siemens 300 o 125 C 150 500 400 300 100 200 50 100 0 o TJ = 125 C o TJ = 25 C 0 0 50 100 150 200 250 300 0.2 350 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 125V C iss Capacitance - PicoFarads I D = 120A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 1,000 C oss 100 Crss 10 f = 1 MHz 1 0 1 0 50 100 150 200 250 300 350 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN240N25X3 Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 1 1000 RDS(on) Limit 25s 100s 0.1 External Lead Current Limit Z (th)JC - K / W I D - Amperes 100 10 1ms 1 0.001 o TJ = 150 C 10ms DC o TC = 25 C Single Pulse 0.1 1 0.01 10 100 VDS - Volts (c) 2018 IXYS CORPORATION, All Rights Reserved. 1,000 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: F_240N25X3(29-S301) 6-02-17-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.