SK 100 TAA )*(+ )**+, )*+ ./0 $&& 1 ) 4&& $6&& ) 2&& $7&& / 0 2& 3 (5 $&& /11 &2 (5 $&& /11 $7 $8&& $%&& (5 $&& /11 $% Characteristics Symbol Conditions SEMITOP(R)2 Two separated thyristors Values Units ./ / 0 $&&3 %9 1 ./ / 0 2&3 $&& 1 ./(+:.;(+ /!< 0 79 $79 3= $& .> /!< 0 79 $79 3= ! , $& 1 / / SK 100 TAA / 0 793 , $& 7&&& $2&& 1 7&&&& $%7&& 1> ?@& AAA B $79 3 7%& 3 Thyristor Target Data Features ! " # $%&& ! ! Typical Applications ' ( !: : E . /!< 0 $79 3 /!< 0 $79 3= 0 9& AAA %& D /!< 0 $79 3= "A /!< 0 79 3= "A : A $&&& 9& 2& $&& : 7&& ):C 1:C C 1 .F /!< 0 79 3= * 0 66 G = "A : A 7&& : 9&& 1 )/ )// / .= .* *<? /!< ) / . / ) /!< 0 79 3= ./ 0 6&& 1= A /!< 0 $79 3 /!< 0 $79 3 /!< 0 $79 3= ) 0 )*+= )* 0 )**+ A " /!< 0 79 3= A A /!< 0 79 3= A A /!< 0 $79 3= A A $,29 A &,4 A 6,9 A 7& &,@9 ?@& AAA B$79 7 $&& &,79 ) ) H 1 5:I 3 ) 1 ) . /!< 0 $79 3= A A 9 1 Diode ); )/ / /!< 0 3= .; 0 1= A /!< 0 3 /!< 0 3 ) ) H .* /!< 0 3= )* 0 )**+ 1 *<? 5:I /!< 3 Mechanical data ) +$ 1 9&D, AAA $ $ E (K+./LM7 79&& 6&&& 7 ) J $4 / 2$ TAA 1 02-08-2007 DIL (c) by SEMIKRON SK 100 TAA Fig. 1 Power dissipation vs. current Fig. 2 Transient thermal impedance vs. time Fig. 3 Forward chracteristic of single thyristor Fig. 4 Surge overload current vs. time Fig. 5 Gate trigger characteristic 2 02-08-2007 DIL (c) by SEMIKRON SK 100 TAA Dimensions in mm (# K(/K FK.1+K/K* ;* /K (FK* L.J( 1J /K +#J/.J L.J( .J /K LN 7 / 2$ ( , L, N 7 /11 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 02-08-2007 DIL (c) by SEMIKRON