SEMITOP®2
Two separated thyristors
SK 100 TAA
Target Data
Features
! "
# $%&& ! !
Typical Applications
'
(
TAA
)*(+ )**+, )*+ ./0 $&& 1
) ) /0 2& 3
4&& 2&& (5 $&& /11 &2
$6&& $7&& (5 $&& /11 $7
$8&& $%&& (5 $&& /11 $%
Characteristics / 0 793
Symbol Conditions Values Units
.// 0 $&&3 %9 1
.// 0 2&3 $&& 1
1
./(+:.;(+ /!< 0 79 $79 3= $& 7&&& $2&& 1
.> /!< 0 79 $79 3= !, $& 7&&&& $%7&& 1>
/ ?@& AAA B $79 3
/ , $& 7%& 3
Thyristor
!: /!< 0 $79 3 $&&& ):C
: /!< 0 $79 3= 0 9& AAA %& D 9& 1:C
E/!< 0 $79 3= "A 2& C
./!< 0 79 3= "A : A $&& : 7&& 1
.F/!< 0 79 3= * 0 66 G = "A : A 7&& : 9&& 1
)//!< 0 79 3= ./0 6&& 1= A $,29 )
)// /!< 0 $79 3 A &,4 )
//!< 0 $79 3 A 6,9 H
.= .* /!< 0 $79 3= ) 0 )*+= )* 0 )**+ A 7& 1
*<? A " &,@9 5:I
/!< ?@& AAA B$79 3
) / /!< 0 79 3= AA 7 )
. / /!< 0 79 3= AA $&& 1
) /!< 0 $79 3= AA &,79 )
. /!< 0 $79 3= AA 9 1
Diode
);/!< 0 3= .;0 1= A )
)/ /!< 0 3 )
//!< 0 3 H
.* /!< 0 3= )* 0 )**+ 1
*<? 5:I
/!< 3
Mechanical data
) 1 9&D, AAA $ $ 79&& 6&&& )
+$ E 7 J
$4
(K+./LM7 / 2$
SK 100 TAA
1 02-08-2007 DIL © by SEMIKRON
Fig. 1 Power dissipation vs. current Fig. 2 Transient thermal impedance vs. time
Fig. 3 Forward chracteristic of single thyristor Fig. 4 Surge overload current vs. time
Fig. 5 Gate trigger characteristic
SK 100 TAA
2 02-08-2007 DIL © by SEMIKRON
Dimensions in mm
(# K(/K FK.1+K/K* ;* /K (FK* L.J( 1J /K +#J/.J L.J( .J /K LN 7
/ 2$ ( , L, N 7
/11
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SK 100 TAA
3 02-08-2007 DIL © by SEMIKRON
