© Semiconductor Components Industries, LLC, 2011
October, 2011− Rev. 9
1Publication Order Number:
BAS16WT1/D
BAS16WT1G, SBAS16WT1G
Silicon Switching Diode
Features
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Continuous Reverse Voltage VR75 V
Recurrent Peak Forward Current IR200 mA
Peak Forward Surge Current
Pulse Width = 10 ms
IFM(surge) 500 mA
Total Power Dissipation,
One Diode Loaded TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD200
1.6
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
RqJA 625 °C/W
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Device Package Shipping†
ORDERING INFORMATION
SC−70
CASE 419
STYLE 2
MARKING
DIAGRAM
BAS16WT1G SC−70
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
A6 MG
G
1
A6 = Specific Device Code
M = Date Code
G= Pb−Free Package
(*Note: Microdot may be in either location)
SBAS16WT1G SC−70
(Pb−Free)
3000 / Tape & Reel
BAS16WT1G, SBAS16WT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
−
−
−
−
715
866
1000
1250
mV
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR
−
−
−
1.0
50
30
mA
Capacitance
(VR = 0, f = 1.0 MHz)
CD−2.0 pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1)
trr −6.0 ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)
QS −45 PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR −1.75 V
BAS16WT1G, SBAS16WT1G
http://onsemi.com
3
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Stored Charge Equivalent Test Circuit
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
VF
1 ns MAX
90%
10%
t
100 ns
tif
trr
Irr
500 WDUT
50 W
DUTY CYCLE = 2%
Vf
90%
10%
20 ns MAX
t
400 ns
VC
VCM
t
VCM +Qa
C
500 WDUT BAW62
D1 243 pF 100 KW
DUTY CYCLE = 2%
V
120 ns
t
2 ns MAX
10%
90%
V
Vfr
1 KW450 W
50 W
DUT
DUTY CYCLE = 2%
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
BAS16WT1G, SBAS16WT1G
http://onsemi.com
4
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 4. Forward Voltage Figure 5. Leakage Current
Figure 6. Capacitance
TA = -40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
BAS16WT1G, SBAS16WT1G
http://onsemi.com
5
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BAS16WT1/D
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