1/40
02.MAR.2012 Rev.001
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TSZ02201-0J3J0AJ00090-1-2
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･14･001
Synchronous Buck Converter
Integrated FET
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●General Description
ROHM’s high efficiency step-down switching regulators
(BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,B
D9120HFN) are the power supply designed to produce
a low voltage including 1 volts from 5/3.3 volts power
supply line. Offers high efficiency with our original pulse
skip control technology and synchronous rectifier.
Employs a current mode control system to provide
faster transient response to sudden change in load.
●Features
Offers fast transient response with current mode
PWM control system.
Offers highly efficiency for all load range with
synchronous rectifier (Nch/Pch FET)
and SLLMTM (Simple Light Load Mode)
Incorporates soft-start function.
Incorporates thermal protection and ULVO
functions.
Incorporates short-current protection circuit with
time delay function.
Incorporates shutdown function
●Application
Power supply for LSI including DSP, Micro computer
and ASIC
●Typical Application Circuit
●Key Specifications
Input voltage range
BD9120HFN: 2.7V to 4.5V
BD9106FVM,BD9107FVM: 4.0V to 5.5V
BD9109FVM,BD9110NV: 4.5V to 5.5V
Output voltage range
BD9109FVM: 3.30V ± 2%
BD9120HFN: 1.0V to 1.5V
BD9107FVM: 1.0V to 1.8V
BD9106FVM,BD9110NV: 1.0V to 2.5V
Output current
BD9106FVM, BD9109FVM,
BD9120HFN: 0.8A(Max.)
BD9107FVM: 1.2A(Max.)
BD9110NV: 2.0A(Max.)
Switching frequency: 1MHz(Typ.)
FET ON resistance
Pch(Typ.) / Nch(Typ.)
BD9110NV: 200mΩ / 150mΩ
BD9106FVM,BD9107FVM: 350mΩ / 250mΩ
BD9120HFN,BD9109FVM: 350mΩ / 250mΩ
Standby current: 0μA(Typ.)
Operating temperature range
BD9110NV: -25℃ to +105℃
BD9120HFN,BD9106FVM: -25℃ to +85℃
BD9107FVM,BD9109FVM: -25℃ to +85℃
●Packages (Typ.) (Typ.) (Max.)
HSON8 2.90mm x 3.00mm x 0.60mm
MSOP8 2.90mm x 4.00mm x 0.90mm
SON008V5060 5.00mm x 6.00mm x 1.00mm
○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays.
GND,PGND
SW
EN
VOUT
ITH
VCC
VOUT
Cin
RITH
CITH
L
ESR
CO
RO
VOUT
Fig.1 Typical Application Circuit
HSON8
SON008V5060
MSOP8
Datasheet
2/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
●Pin Configurations
●Pin Descriptions
【BD9106FVM, BD9107FVM, BD9109FVM】
Pin No.
Pin name
PIN function
1
ADJ/VOUT
Output voltage detect pin/ ADJ for BD9106･07FVM
2
ITH
GmAmp output pin/Connected phase compensation capacitor
3
EN
Enable pin(Active High)
4
GND
Ground
5
PGND
Nch FET source pin
6
SW
Pch/Nch FET drain output pin
7
PVCC
Pch FET source pin
8
VCC
VCC power supply input pin
【BD9110NV】
Pin No.
Pin name
PIN function
1
ADJ
Output voltage adjust pin
2
VCC
VCC power supply input pin
3
ITH
GmAmp output pin/Connected phase compensation capacitor
4
GND
Ground
5
PGND
Nch FET source pin
6
SW
Pch/Nch FET drain output pin
7
PVCC
Pch FET source pin
8
EN
Enable pin(Active High)
【BD9120HFN】
Pin No.
Pin name
PIN function
1
ADJ
Output voltage adjust pin
2
ITH
GmAmp output pin/Connected phase compensation capacitor
3
EN
Enable pin(Active High)
4
GND
Ground
5
PGND
Nch FET source pin
6
SW
Pch/Nch FET drain output pin
7
PVCC
Pch FET source pin
8
VCC
VCC power supply input pin
8
VCC
7
PVCC
6
SW
5
PGND
1
ADJ
2
ITH
3
EN
4
GND
Fig.2 BD9106FVM, BD9107FVM
8
VCC
7
PVCC
6
SW
5
PGND
1
VOUT
2
ITH
3
EN
4
GND
Fig.3 BD9109FVM
ADJ 1
VCC 2
ITH 3
GND 4
8 EN
7 PVCC
6 SW
5 PGND
Fig.4 BD9110NV
ADJ
ITH
EN
GND
VCC
PVCC
SW
PGND
8
1
2
3
4
5
6
7
Fig.5 BD9120HFN
(Top View)
(Top View)
(Top View)
(Top View)
Datasheet
3/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
●Ordering Information
●Lineup
Operating
Temperature
Range
Input voltage
range
Output
voltage
range
Output
Current
（Max.）
UVLO
Threshold
voltage
（Typ．）
Package
Orderable
Part Number
-25℃ to +85℃
4.0V to 5.5V
Adjustable
(1.0 to 2.5V)
0.8A
3.4V
MSOP8
Reel of 3000
BD9106FVM-TR
Adjustable
(1.0 to 1.8V)
1.2A
2.7V
MSOP8
Reel of 3000
BD9107FVM-TR
4.5V to 5.5V
3.30±2%
0.8A
3.8V
MSOP8
Reel of 3000
BD9109FVM-TR
2.7V to 4.5V
Adjustable
(1.0 to 1.5V)
0.8A
2.5V
HSON8
Reel of 3000
BD9120HFN-TR
-25℃ to +105℃
4.5V to 5.5V
Adjustable
(1.0 to 2.5V)
2.0A
3.7V
SON00
8V5060
Reel of 2000
BD9110NV-E2
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
BD910xFVM
BD9110NV
BD9120HFN
VCC voltage
VCC
-0.3 to +7 *1
-0.3 to +7 *1
-0.3 to +7 *1
V
PVCC voltage
PVCC
-0.3 to +7 *1
-0.3 to +7 *1
-0.3 to +7 *1
V
EN voltage
EN
-0.3 to +7
-0.3 to +7
-0.3 to +7
V
SW,ITH voltage
SW,ITH
-0.3 to +7
-0.3 to +7
-0.3 to +7
V
Power dissipation 1
Pd1
387.5*2
900*4
1350*6
mW
Power dissipation 2
Pd2
587.4*3
3900*5
1750*7
mW
Operating temperature range
Topr
-25 to +85
-25 to +105
-25 to +85
℃
Storage temperature range
Tstg
-55 to +150
-55 to +150
-55 to +150
℃
Maximum junction temperature
Tjmax
+150
+150
+150
℃
*1 Pd should not be exceeded.
*2 Derating in done 3.1mW/℃ for temperatures above Ta=25℃.
*3 Derating in done 4.7mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB.
*4 Derating in done 7.2mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (3%) of copper on the back side).
*5 Derating in done 31.2mW/℃ for temperatures above Ta=25℃, Mounted on a board according to JESD51-7.
*6 Derating in done 10.8mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (7%) of copper on the back side).
*7 Derating in done 14mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (6.5%) of copper on the back side).
●Recommended Operating Ratings (Ta=25℃)
Parameter
Symbol
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
VCC voltage
VCC *8
4.0
5.5
4.0
5.5
4.5
5.5
4.5
5.5
2.7
4.5
V
PVCC voltage
PVCC *8
4.0
5.5
4.0
5.5
4.5
5.5
4.5
5.5
2.7
4.5
V
EN voltage
EN
0
VCC
0
VCC
0
VCC
0
VCC
0
VCC
V
SW average output current
Isw *8
-
0.8
-
1.2
-
0.8
-
2.0
-
0.8
A
*8 Pd should not be exceeded.
B
D
9
1
x
x
x
x
-
x x
Part Number
Package
NV:SON008V5060
HFN:HSON8
FVM:MSOP8
Packaging and forming specification
E2: Embossed tape and reel
TR: Embossed tape and reel
Datasheet
4/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
●Electrical Characteristics
◎BD9106FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Standby current
ISTB
-
0
10
μA
EN=GND
Bias current
ICC
-
250
400
μA
EN Low voltage
VENL
-
GND
0.8
V
Standby mode
EN High voltage
VENH
2.0
VCC
-
V
Active mode
EN input current
IEN
-
1
10
μA
VEN=5V
Oscillation frequency
FOSC
0.8
1
1.2
MHz
Pch FET ON resistance *9
RONP
-
0.35
0.60
Ω
PVCC=5V
Nch FET ON resistance *9
RONN
-
0.25
0.50
Ω
PVCC=5V
ADJ Voltage
VADJ
0.780
0.800
0.820
V
Output voltage *9
VOUT
-
1.200
-
V
ITH SInk current
ITHSI
10
20
-
μA
ADJ=H
ITH Source Current
ITHSO
10
20
-
μA
ADJ=L
UVLO threshold voltage
VUVLOTh
3.2
3.4
3.6
V
VCC=H→L
UVLO hysteresis voltage
VUVLOHys
50
100
200
mV
Soft start time
TSS
1.5
3
6
ms
Timer latch time
TLATCH
0.5
1
2
ms
*9 Outgoing inspection is not done on all products
◎BD9107FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Standby current
ISTB
-
0
10
μA
EN=GND
Bias current
ICC
-
250
400
μA
EN Low voltage
VENL
-
GND
0.8
V
Standby mode
EN High voltage
VENH
2.0
VCC
-
V
Active mode
EN input current
IEN
-
1
10
μA
VEN=5V
Oscillation frequency
FOSC
0.8
1
1.2
MHz
Pch FET ON resistance *9
RONP
-
0.35
0.60
Ω
PVCC=5V
Nch FET ON resistance *9
RONN
-
0.25
0.50
Ω
PVCC=5V
ADJ Voltage
VADJ
0.780
0.800
0.820
V
Output voltage *9
VOUT
-
1.200
-
V
ITH SInk current
ITHSI
10
20
-
μA
VOUT =H
ITH Source Current
ITHSO
10
20
-
μA
VOUT =L
UVLO threshold voltage
VUVLOTh
2.6
2.7
2.8
V
VCC=H→L
UVLO hysteresis voltage
VUVLOHys
150
300
600
mV
Soft start time
TSS
0.5
1
2
ms
Timer latch time
TLATCH
0.5
1
2
ms
*9 Outgoing inspection is not done on all products
◎BD9109FVM (Ta=25℃, VCC=PVCC=5V, EN= VCC unless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Standby current
ISTB
-
0
10
μA
EN=GND
Bias current
ICC
-
250
400
μA
EN Low voltage
VENL
-
GND
0.8
V
Standby mode
EN High voltage
VENH
2.0
VCC
-
V
Active mode
EN input current
IEN
-
1
10
μA
VEN=5V
Oscillation frequency
FOSC
0.8
1
1.2
MHz
Pch FET ON resistance *9
RONP
-
0.35
0.60
Ω
PVCC=5V
Nch FET ON resistance *9
RONN
-
0.25
0.50
Ω
PVCC=5V
Output voltage
VOUT
3.234
3.300
3.366
V
ITH SInk current
ITHSI
10
20
-
μA
VOUT =H
ITH Source Current
ITHSO
10
20
-
μA
VOUT =L
UVLO threshold voltage
VUVLO1
3.6
3.8
4.0
V
VCC=H→L
UVLO hysteresis voltage
VUVLO2
3.65
3.9
4.2
V
VCC=L→H
Soft start time
TSS
0.5
1
2
ms
Timer latch time
TLATCH
1
2
3
ms
SCP/TSD operated
Output Short circuit
Threshold Voltage
VSCP
-
2
2.7
V
VOUT =H→L
*9 Outgoing inspection is not done on all products
Datasheet
5/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
◎BD9110NV (Ta=25℃, VCC=PVCC=5V, EN=VCC, R1=10kΩ,R2=5kΩ unless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Standby current
ISTB
-
0
10
μA
EN=GND
Bias current
ICC
-
250
350
μA
EN Low voltage
VENL
-
GND
0.8
V
Standby mode
EN High voltage
VENH
2.0
VCC
-
V
Active mode
EN input current
IEN
-
1
10
μA
VEN=5V
Oscillation frequency
FOSC
0.8
1
1.2
MHz
Pch FET ON resistance *9
RONP
-
200
320
mΩ
PVCC=5V
Nch FET ON resistance *9
RONN
-
150
270
mΩ
PVCC=5V
ADJ Voltage
VADJ
0.780
0.800
0.820
V
Output voltage *9
VOUT
-
1.200
-
V
ITH SInk current
ITHSI
10
20
-
μA
VOUT =H
ITH Source Current
ITHSO
10
20
-
μA
VOUT =L
UVLO threshold voltage
VUVLOTh
3.5
3.7
3.9
V
VCC=H→L
UVLO hysteresis voltage
VUVLOHys
50
100
200
mV
Soft start time
TSS
2.5
5
10
ms
Timer latch time
TLATCH
0.5
1
2
ms
*9 Outgoing inspection is not done on all products
◎BD9120HFN (Ta=25℃, VCC=PVCC=3.3V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Standby current
ISTB
-
0
10
μA
EN=GND
Bias current
ICC
-
200
400
μA
EN Low voltage
VENL
-
GND
0.8
V
Standby mode
EN High voltage
VENH
2.0
VCC
-
V
Active mode
EN input current
IEN
-
1
10
μA
VEN=3.3V
Oscillation frequency
FOSC
0.8
1
1.2
MHz
Pch FET ON resistance *9
RONP
-
0.35
0.60
Ω
PVCC=3.3V
Nch FET ON resistance *9
RONN
-
0.25
0.50
Ω
PVCC=3.3V
ADJ Voltage
VADJ
0.780
0.800
0.820
V
Output voltage *9
VOUT
-
1.200
-
V
ITH SInk current
ITHSI
10
20
-
μA
VOUT =H
ITH Source Current
ITHSO
10
20
-
μA
VOUT =L
UVLO threshold voltage
VUVLO1
2.400
2.500
2.600
V
VCC=H→L
UVLO hysteresis voltage
VUVLO2
2.425
2.550
2.700
V
VCC=L→H
Soft start time
TSS
0.5
1
2
ms
Timer latch time
TLATCH
1
2
3
ms
SCP/TSD operated
Output Short circuit
Threshold Voltage
VSCP
-
VOUT×0.5
VOUT×0.7
V
VOUT =H→L
*9 Outgoing inspection is not done on all products
Datasheet
6/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
●Block Diagram
【BD9106FVM, BD9107FVM】
【BD9109FVM】
Fig.6 BD9106FVM, BD9107FVM Block Diagram
Fig.7 BD9109FVM Block Diagram
Datasheet
7/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
【BD9110NV】
【BD9120HFN】
Fig.8 BD9110NV Block Diagram
Fig.9 BD9120HFN Block Diagram
Datasheet
8/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
●Typical Performance Curves
【BD9106FVM】
Fig.10 Vcc-Vout
Fig.11 Ven-Vout
Fig.12 Iout-Vout
Fig.13 Ta-Vout
Datasheet
9/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Fig.17 Ta-Ven
Fig.15 Ta-Fosc
Fig.16 Ta-Ronn, Ronp
Fig.14 Efficiency
Datasheet
10/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Fig.21 SW waveform Io=10mA
Fig.19 Vcc-Fosc
Fig.20 Soft start waveform
Fig.18 Ta-Icc
Datasheet
11/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Fig.22 SW waveform Io=200mA
Fig. 23 Transient response
Io=100→600mA(10μs)
Fig.24 Transient response
Io=600→100mA(10μs)
Datasheet
12/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
【BD9107FVM】
Fig.25 Vcc-Vout
Fig.26 Ven-Vout
Fig.27 Iout-Vout
Fig.28 Ta-Vout
Datasheet
13/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Fig.29 Efficiency
Fig.30 Ta-Fosc
Fig.31 Ta-RONN, RONP
Fig.32 Ta-VEN
Datasheet
14/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Fig.33 Ta-ICC
Fig.34 Vcc-Fosc
Fig.35 Soft start waveform
Fig.36 SW waveform Io=10mA
Datasheet
15/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Fig.37 SW waveform Io=500mA
Fig. 38 Transient response
Io=100→600mA(10μs)
Fig.39 Transient response
Io=600→100mA(10μs)
Datasheet
16/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
【BD9109FVM】
Fig.40 Vcc-Vout
Fig.41 Ven-Vout
Fig.42 Iout-Vout
Fig. 43 Ta-Vout
Datasheet
17/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Fig.44 Efficiency
Fig.45 Ta-Fosc
Fig.46 Ta-Ronn, Ronp
Fig.47 Ta-Ven
Datasheet
18/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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TSZ22111･15･001
Fig.48 Ta-Icc
Fig.49 Vcc-Fosc
Fig.50 Soft start waveform
Fig.51 SW waveform Io=10mA
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
Fig.52 SW waveform Io=500mA
Fig. 53 Transient response
Io=100→600mA(10μs)
Fig.54 Transient response
Io=600→100mA(10μs)
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
【BD9110NV】
Fig.57 Iout-Vout
Fig. 58 Ta-Vout
Fig.55 Vcc-Vout
Fig.56 Ven-Vout
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
Fig.61 Ta-Ronn, Ronp
Fig.62 Ta-Ven
Fig.59 Efficiency
Fig.60 Ta-Fosc
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
Fig.63 Ta-Icc
Fig.64 Vcc-Fosc
Fig.65 Soft start waveform
Fig.66 SW waveform Io=10mA
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
Fig.67 SW waveform Io=500mA
Fig. 68 Transient response
Io=100→600mA(10μs)
Fig.69 Transient response
Io=600→100mA(10μs)
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
【BD9120HFN】
Fig.70 Vcc-Vout
Fig. 73 Ta-Vout
Fig.72 Iout-Vout
Fig.71 Ven-Vout
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
Fig.74 Efficiency
Fig.77 Ta-Ven
Fig.75 Ta-Fosc
Fig.76 Ta-Ronn, Ronp
Datasheet
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TSZ22111･15･001
Fig.78 Ta-Icc
Fig.79 Vcc-Fosc
Fig.80 Soft start waveform
Fig.81 SW waveform Io=10mA
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
Fig.82 SW waveform Io=200mA
Fig. 83 Transient response
Io=100→600mA(10μs)
Fig.84 Transient response
Io=600→100mA(10µs)
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
Application Information
●Operation
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN are a synchronous rectifying step-down switching
regulator that achieves faster transient response by employing current mode PWM control system. It utilizes
switching operation in PWM (Pulse Width Modulation) mode for heavier load, while it utilizes SLLMTM (Simple Light
Load Mode) operation for lighter load to improve efficiency.
○Synchronous rectifier
It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC,
and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power
dissipation of the set is reduced.
○Current mode PWM control
Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.
・PWM (Pulse Width Modulation) control
The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a P-channel MOS FET (while a
N-channel MOS FET is turned OFF), and an inductor current IL increases. The current comparator (Current Comp)
receives two signals, a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback
control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the
P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control
repeat this operation.
・SLLMTM (Simple Light Load Mode) control
When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching
pulse is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation
without voltage drop or deterioration in transient response during the mode switching from light load to heavy load or
vise versa.
Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current
Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching
is tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces
the switching dissipation and improves the efficiency.
Fig.85 Diagram of current mode PWM control
OSC
Level
Shift
Driver
Logic
R
Q
S
IL
SW
ITH
Current
Comp
Gm Amp.
SET
RESET
FB
Load
SENSE
VOUT
VOUT
Fig.86 PWM switching timing chart
Fig.87 SLLM switching timing chart
Current
Comp
SET
RESET
SW
VOUT
PVCC
GND
GND
GND
IL(AVE)
VOUT(AVE)
SENSE
FB
Current
Comp
SET
RESET
SW
VOUT
PVCC
GND
GND
GND
0A
VOUT(AVE)
SENSE
FB
IL
Not switching
IL
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
●Description of Operations
・Soft-start function
EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited
during startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.
・Shutdown function
With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference
voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 μA (Typ.).
・UVLO function
Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width of
50 to 300 mV (Typ.) is provided to prevent output chattering.
*Soft Start time(typ.) Fig.88 Soft start, Shutdown, UVLO timing chart
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Unit
Tss
3
1
1
5
1
msec
・Short-current protection circuit with time delay function
Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for the
fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking UVLO.
*Timer Latch time (typ.) Fig.89 Short-current protection circuit with time delay timing chart
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Unit
TLATCH
1
1
2
1
2
msec
※ In addition to current limit circuit, output short detect circuit is built in on BD9109FVM and BD9120HFN. If output voltage fall below
2V(typ, BD9109FVM) or Vout×0.5(typ,BD9120HFN), output voltage will hold turned OFF.
Hysteresis 50 to 300mV
Tss
Tss
Tss
Soft start
Standby mode
Operating mode
Standby
mode
Operating mode
Standby
mode
Operating mode
Standby mode
UVLO
EN
UVLO
UVLO
VCC
EN
VOUT
1msec
Output OFF
latch
EN
VOUT
Limit
IL
Standby
mode
Operating mode
Standby
mode
Operating mode
EN
Timer latch
EN
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
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TSZ22111･15･001
●Information on Advantages
Advantage 1：Offers fast transient response with current mode control system.
Voltage drop due to sudden change in load was reduced by about 40%.
Fig.90 Comparison of transient response
Advantage 2： Offers high efficiency for all load range.
・For lighter load:
Utilizes the current mode control mode called SLLMTM for lighter load, which reduces various dissipation such as
switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and
on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
・For heavier load:
Utilizes the synchronous rectifying mode and the low on-resistance
MOS FETs incorporated as power transistor.
ON resistance of P-channel MOS FET: 0.2 to 0.35 Ω (Typ.)
ON resistance of N-channel MOS FET: 0.15 to 0.25 Ω (Typ.)
Achieves efficiency improvement for heavier load.
Offers high efficiency for all load range with the improvements mentioned above.
Advantage 3：・Supplied in smaller package due to small-sized power MOS FET incorporated.
(3 package like MOSP8, HSON8, SON008V5060)
・Allows reduction in size of application products
Reduces a mounting area required.
Fig.92 Example application
Conventional product (VOUT of which is 3.3 volts)
BD9109FVM (Load response IO=100mA→600mA)
VOUT
IOUT
228mV
VOUT
IOUT
・Output capacitor Co required for current mode control: 10 μF ceramic capacitor
・Inductance L required for the operating frequency of 1 MHz: 4.7 μH inductor
(BD9110NV:Co=22µF, L=2.2µH)
DC/DC
Convertor
Controller
RITH
L
Co
VOUT
CITH
VCC
Cin
10mm
15mm
RITH
CITH
CIN
CO
L
0.001
0.01
0.1
1
0
50
100
①
②
PWM
SLLMTM
①inprovement by SLLM system
②improvement by synchronous rectifier
Efficiency η[%]
Output current Io[A]
Fig.91 Efficiency
Datasheet
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TSZ22111･15･001
●Switching Regulator Efficency
Efficiency ŋ may be expressed by the equation shown below:
Efficiency may be improved by reducing the switching regulator power dissipation factors PDα as follows:
Dissipation factors:
1) ON resistance dissipation of inductor and FET：PD(I2R)
2) Gate charge/discharge dissipation：PD(Gate)
3) Switching dissipation：PD(SW)
4) ESR dissipation of capacitor：PD(ESR)
5) Operating current dissipation of IC：PD(IC)
1)PD(I2R)=IOUT2×(RCOIL+RON) (RCOIL[Ω]：DC resistance of inductor, RON[Ω]：ON resistance of FETIOUT[A]：Output current.)
2)PD(Gate)=Cgs×f×V2 (Cgs[F]：Gate capacitance of FET,f[H]：Switching frequency,V[V]：Gate driving voltage of FET)
4)PD(ESR)=IRMS2×ESR (IRMS[A]：Ripple current of capacitor,ESR[Ω]：Equivalent series resistance.)
5)PD(IC)=Vin×ICC (ICC[A]：Circuit current.)
●Consideration on Permissible Dissipation and Heat Generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
If VCC=5V, VOUT=3.3V, RCOIL=0.15Ω, RONP=0.35Ω, RONN=0.25Ω
IOUT=0.8A, for example,
D=VOUT/VCC=3.3/5=0.66
RON=0.66×0.35+(1-0.66)×0.25
=0.231+0.085
=0.316[Ω]
P=0.82×(0.15+0.316)
≒298[mV]
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the
consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
η=
VOUT×IOUT
Vin×Iin
×100[%]=
POUT
Pin
×100[%]=
POUT
POUT+PDα
×100[%]
Vin2×CRSS×IOUT×f
IDRIVE
3)PD(SW)=
(CRSS[F]：Reverse transfer capacitance of FET、IDRIVE[A]：Peak current of gate.)
0
25
50
75
100
125
150
0
200
400
600
800
1000
85
②387.5mW
①587.4mW
①mounted on glass epoxy PCB
θj-a=212.8℃/W
②Using an IC alone
θj-a=322.6℃/W
Power dissipation:Pd [mW]
Ambient temperature:Ta [℃]
Fig.93 Thermal derating curve
(MSOP8)
Ambient temperature:Ta [℃]
0
25
50
75
100
125
150
0
0.5
1.0
1.5
②0.64W
①0.90W
Power dissipation:Pd [W]
Ambient temperature:Ta [℃]
Fig.95 Thermal derating curve
(SON008V5060)
① for SON008V5060
ROHM standard 1layer board
θj-a=138.9℃/W
② Using an IC alone
θj-a=195.3℃/W
0
25
50
75
100
125
150
0
0.5
1.0
1.5
②0.63W
①1.15W
Power dissipation:Pd [W]
Fig.94 Thermal derating curve
(HSON8)
① mounted on glass epoxy PCB
θj-a=133.0℃/W
② Using an IC alone
θj-a=195.3℃/W
85
105
P=IOUT2×(RCOIL+RON)
RON=D×RONP+(1-D)×RONN
D：ON duty (=VOUT/VCC)
RCOIL：DC resistance of coil
RONP：ON resistance of P-channel MOS FET
RONN：ON resistance of N-channel MOS FET
IOUT：Output current
Datasheet
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TSZ22111･15･001
●Selection of Components Externally Connected
1. Selection of inductor (L)
* Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency.
The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating.
If VCC=5V, VOUT=3.3V, f=1MHz, ΔIL=0.3×0.8A=0.24A, for example,(BD9109FVM)
* Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for
better efficiency.
2. Selection of output capacitor (CO)
As the output rise time must be designed to fall within the soft-start time, the capacitance of output capacitor should be
determined with consideration on the requirements of equation (5):
In case of BD9109FVM, for instance, and if VOUT=3.3V, IOUT=0.8A, and TSS=1ms,
Inappropriate capacitance may cause problem in startup. A 10 μF to 100 μF ceramic capacitor is recommended.
3. Selection of input capacitor (Cin)
A low ESR 10μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
The inductance significantly depends on output ripple current.
As seen in the equation (1), the ripple current decreases as the
inductor and/or switching frequency increases.
ΔIL=
(VCC-VOUT)×VOUT
L×VCC×f
[A]・・・(1)
Appropriate ripple current at output should be 30% more or less of
the maximum output current.
ΔIL=0.3×IOUTmax. [A]・・・(2)
L=
(VCC-VOUT)×VOUT
ΔIL×VCC×f
[H]・・・(3)
(ΔIL: Output ripple current, and f: Switching frequency)
Output capacitor should be selected with the consideration on the stability
region and the equivalent series resistance required to smooth ripple voltage.
Output ripple voltage is determined by the equation (4)：
ΔVOUT=ΔIL×ESR [V]・・・(4)
(ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor)
*Rating of the capacitor should be determined allowing sufficient margin
against output voltage. Less ESR allows reduction in output ripple voltage.
Input capacitor to select must be a low ESR capacitor of the capacitance
sufficient to cope with high ripple current to prevent high transient voltage. The
ripple current IRMS is given by the equation (6):
IRMS=IOUT×
VOUT(VCC-VOUT)
VCC
[A]・・・(6)
√
When VCC is twice the Vout,
IRMS=
IOUT
2
Fig.97 Output capacitor
(5-3.3)×3.3
0.24×5×1M
L=
=4.675μ → 4.7[μH]
< Worst case > IRMS(max.)
If VCC=5V, VOUT=3.3V, and IOUTmax.=0.8A, (BD9109FVM)
IRMS=0.8×
3.3(5-3.3)
5
=0.38[ARMS]
√
Co≦
TSS×(Ilimit-IOUT)
VOUT
・・・(5)
Tss: Soft-start time
Ilimit: Over current detection level, 2A(Typ)
Fig.98 Input capacitor
ΔIL
Fig.96 Output ripple current
IL
VCC
IL
L
Co
VOUT
VCC
L
Co
VOUT
ESR
Co≦
1m×(2-0.8)
3.3
≒364 [μF]
VCC
L
Co
VOUT
Cin
Datasheet
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TSZ22111･15･001
4. Determination of RITH, CITH that works as a phase compensator
As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area
due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high
frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the
power amplifier output with C and R as described below to cancel a pole at the power amplifier.
Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load
resistance with CR zero correction by the error amplifier.
5. Determination of output voltage
The output voltage VOUT is determined by the equation (7):
VOUT=(R2/R1+1)×VADJ・・・(7) VADJ: Voltage at ADJ terminal (0.8V Typ.)
With R1 and R2 adjusted, the output voltage may be determined as required.
Adjustable output voltage range： 1.0V to 1.5V/ BD9107FVM, BD9120HFN
1.0V to 2.5V/BD106FVM, BD9110NV
Use 1 kΩ to 100 kΩ resistor for R1. If a resistor of the resistance higher than
100 kΩ is used, check the assembled set carefully for ripple voltage etc.
Fig.102 Determination of output voltage
Fig.99 Open loop gain characteristics
Fig.100 Error amp phase compensation characteristics
fp=
2π×RO×CO
1
fz(ESR)=
2π×ESR×CO
1
Pole at power amplifier
When the output current decreases, the load resistance Ro
increases and the pole frequency lowers.
fp(Min.)=
2π×ROMax.×CO
1
[Hz]←with lighter load
fp(Max.)=
2π×ROMin.×CO
1
[Hz]←with heavier load
Zero at power amplifier
Increasing capacitance of the output capacitor lowers the
pole frequency while the zero frequency does not change.
(This is because when the capacitance is doubled, the
capacitor ESR reduces to half.)
fz(Amp.)=
2π×RITH.×CITH
1
GND,PGND
SW
VCC,PVCC
EN
VOUT
ITH
VCC
VOUT
Cin
RITH
CITH
L
ESR
CO
RO
VOUT
Fig.101 Typical application
fz(Amp.)= fp(Min.)
2π×RITH×CITH
1
=
2π×ROMax.×CO
1
SW
ADJ
L
Co
R2
R1
Output
Gain
[dB]
Phase
[deg]
A
0
0
-90
A
0
0
-90
fz(Amp.)
fp(Min.)
fp(Max.)
fz(ESR)
IOUTMin.
IOUTMax.
Gain
[dB]
Phase
[deg]
Datasheet
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TSZ22111･15･001
●Cautions on PC Board layout
BD9106FVM, BD9107FVM, BD9109FVM, BD9120HFN
Fig.103 Layout diagram
BD9110NV Cautions on PC Board layout
Fig.104 Layout diagram
① For the sections drawn with heavy line, use thick conductor pattern as short as possible.
② Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to
the pin PGND.
③ Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
※ The package of HSON8 (BD9120HFN) and SON008V5050 (BD9110NV) has thermal FIN on the reverse of the package.
The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB.
●Recommended components Lists on above application
Table1. [BD9106FVM]
Symbol
Part
Value
Manufacturer
Series
L
Coil
4.7μH
Sumida
CMD6D11B
TDK
VLF5014AT-4R7M1R1
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CITH
Ceramic capacitor
750pF
murata
GRM18series
RITH
Resistance
VOUT=1.0V
18kΩ
ROHM
MCR10 1802
VOUT=1.2V
22kΩ
ROHM
MCR10 2202
VOUT=1.5V
22kΩ
ROHM
MCR10 2202
VOUT=1.8V
27kΩ
ROHM
MCR10 2702
VOUT=2.5V
36kΩ
ROHM
MCR10 3602
8
7
6
5
VOUT/ADJ
ITH
EN
GND
VCC
PVCC
SW
PGND
CO
GND
VOUT
VCC
L
①
③
EN
RITH
CITH
CIN
②
1
2
3
4
ADJ
VCC
ITH
GND
EN
PVCC
SW
PGND
VCC
RITH
GND
Co
CIN
VOUT
EN
L
CITH
③
①
②
1
2
3
4
8
7
6
5
R2
R1
Datasheet
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TSZ22111･15･001
Table2. [BD9107FVM]
Symbol
Part
Value
Manufacturer
Series
L
Coil
4.7μH
Sumida
CMD6D11B
TDK
VLF5014AT-4R7M1R1
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CITH
Ceramic capacitor
1000pF
murata
GRM18series
RITH
Resistance
VOUT=1.0V
4.3kΩ
ROHM
MCR10 4301
VOUT=1.2V
6.8kΩ
ROHM
MCR10 6801
VOUT=1.5V
9.1kΩ
ROHM
MCR10 9101
VOUT=1.8V
12kΩ
ROHM
MCR10 1202
Table3. [BD9109VM]
Symbol
Part
Value
Manufacturer
Series
L
Coil
4.7μH
Sumida
CMD6D11B
TDK
VLF5014AT-4R7M1R1
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CITH
Ceramic capacitor
330pF
murata
GRM18series
RITH
Resistance
30kΩ
ROHM
MCR10 3002
Table4. [BD9110NV]
Symbol
Part
Value
Manufacturer
Series
L
Coil
2.2μH
TDK
LTF5022T-2R2N3R2
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
22μF
Kyocera
CM316B226K06A
CITH
Ceramic capacitor
1000pF
murata
GRM18series
RITH
Resistance
VOUT=1.0V
12kΩ
ROHM
MCR10 1202
VOUT=1.2V
VOUT=1.5V
VOUT=1.8V
VOUT=2.5V
Table5. [BD9120HFN]
Symbol
Part
Value
Manufacturer
Series
L
Coil
4.7μH
Sumida
CMD6D11B
TDK
VLF5014AT-4R7M1R1
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106K10A
CITH
Ceramic capacitor
680pF
murata
GRM18series
RITH
Resistance
VOUT=1.0V
8.2kΩ
ROHM
MCR10 8201
VOUT=1.2V
8.2kΩ
ROHM
MCR10 8201
VOUT=1.5V
4.7kΩ
ROHM
MCR10 4701
*The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characteristics should be checked on
your application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing
the depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier diode
established between the SW and PGND pins.
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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TSZ22111･15･001
●I/O Equivalence Circuit
【BD9106FVM, BD9107FVM, BD9109FVM】
【BD9110NV, BD9120HFN】
Fig.105 I/O equivalence circuit
VCC
EN
10kΩ
・EN pin
VCC
ADJ
10kΩ
・ADJ pin (BD9106FVM, BD9107FVM)
VCC
VOUT
10kΩ
・VOUT pin (BD9109FVM)
VCC
ITH
VCC
・ITH pin
・SW pin
PVCC
SW
PVCC
PVCC
EN
10kΩ
・EN pin
・SW pin
PVCC
SW
PVCC
PVCC
ITH
・ITH pin (BD9120HFN)
VCC
ITH
・ITH pin (BD9110NV)
VCC
ADJ
10kΩ
Datasheet
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
02.MAR.2012 Rev.001
TSZ02201-0J3J0AJ00090-1-2
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
●Operational Notes
1. Absolute Maximum Ratings
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed
the absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses.
2. Electrical potential at GND
GND must be designed to have the lowest electrical potential In any operating conditions.
3. Short-circuiting between terminals, and mismounting
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and
power supply or GND may also cause breakdown.
4.Operation in Strong electromagnetic field}
Be noted that using the IC in the strong electromagnetic radiation can cause operation failures.
5. Thermal shutdown protection circuit
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not
be used thereafter for any operation originally intended.
6. Inspection with the IC set to a pc board
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
7. Input to IC terminals
This is a monolithic IC with P+ isolation between P-substrate and each element as illustrated below. This P-layer and
the N-layer of each element form a P-N junction, and various parasitic element are formed.
If a resistor is joined to a transistor terminal as shown in Fig 106:
○P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side), or
GND>Terminal B (at transistor side); and
○if GND>Terminal B (at NPN transistor side),
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Fig.106 Simplified structure of monorisic IC
8. Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the
small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
38/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Datasheet
02.MAR.2012 Rev.001
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TSZ22111･15･001
TSZ02201-0J3J0AJ00090-1-2
●Physical Dimensions Tape and Reel information
39/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Datasheet
02.MAR.2012 Rev.001
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TSZ22111･15･001
TSZ02201-0J3J0AJ00090-1-2
●Marking Diagrams
BD9106FVM BD9107FVM
BD9109FVM BD9110NV
BD9120HFN
MSOP8(TOP VIEW)
D 9 1
Part Number Marking
LOT Number
1PIN MARK
0
6
HSON8 (TOP VIEW)
2 0
Part Number Marking
LOT Number
1PIN MARK
D 9 1
SON008V5060 (TOP VIEW)
BD9110
Part Number Marking
LOT Number
1PIN MARK
MSOP8(TOP VIEW)
D 9 1
Part Number Marking
LOT Number
1PIN MARK
0
7
MSOP8(TOP VIEW)
D 9 1
Part Number Marking
LOT Number
1PIN MARK
0
9
40/40
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Datasheet
02.MAR.2012 Rev.001
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
TSZ02201-0J3J0AJ00090-1-2
●Revision History
Date
Revision
Changes
17.Jan.2012
001
New Release
Datasheet
Datasheet
Notice - Rev.001
Notice
●Precaution for circuit design
1) The products are designed and produced for application in ordinary electronic equipment (AV equipment, OA
equipment, telecommunication equipment, home appliances, amusement equipment, etc.). If the products are to be
used in devices requiring extremely high reliability (medical equipment, transport equipment, aircraft/spacecraft,
nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose
malfunction or operational error may endanger human life and sufficient fail-safe measures, please consult with the
ROHM sales staff in advance. If product malfunctions may result in serious damage, including that to human life,
sufficient fail-safe measures must be taken, including the following:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits in the case of single-circuit failure
2) The products are designed for use in a standard environment and not in any special environments. Application of the
products in a special environment can deteriorate product performance. Accordingly, verification and confirmation of
product performance, prior to use, is recommended if used under the following conditions:
[a] Use in various types of liquid, including water, oils, chemicals, and organic solvents
[b] Use outdoors where the products are exposed to direct sunlight, or in dusty places
[c] Use in places where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2,
and NO2
[d] Use in places where the products are exposed to static electricity or electromagnetic waves
[e] Use in proximity to heat-producing components, plastic cords, or other flammable items
[f] Use involving sealing or coating the products with resin or other coating materials
[g] Use involving unclean solder or use of water or water-soluble cleaning agents for cleaning after soldering
[h] Use of the products in places subject to dew condensation
3) The products are not radiation resistant.
4) Verification and confirmation of performance characteristics of products, after on-board mounting, is advised.
5) In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
6) De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta).
When used in sealed area, confirm the actual ambient temperature.
7) Confirm that operation temperature is within the specified range described in product specification.
8) Failure induced under deviant condition from what defined in the product specification cannot be guaranteed.
●Precaution for Mounting / Circuit board design
1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the remainder of flux may negatively affect
product performance and reliability.
2) In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
Company in advance.
Regarding Precaution for Mounting / Circuit board design, please specially refer to ROHM Mounting specification
●Precautions Regarding Application Examples and External Circuits
1) If change is made to the constant of an external circuit, allow a sufficient margin due to variations of the characteristics
of the products and external components, including transient characteristics, as well as static characteristics.
2) The application examples, their constants, and other types of information contained herein are applicable only when
the products are used in accordance with standard methods. Therefore, if mass production is intended, sufficient
consideration to external conditions must be made.
Datasheet
Datasheet
Notice - Rev.001
●Precaution for Electrostatic
This product is Electrostatic sensitive product, which may be damaged due to Electrostatic discharge. Please take proper
caution during manufacturing and storing so that voltage exceeding Product maximum rating won't be applied to products.
Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from
charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
●Precaution for Storage / Transportation
1) Product performance and soldered connections may deteriorate if the products are stored in the following places:
[a] Where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] Where the temperature or humidity exceeds those recommended by the Company
[c] Storage in direct sunshine or condensation
[d] Storage in high Electrostatic
2) Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using products of which storage time is
exceeding recommended storage time period .
3) Store / transport cartons in the correct direction, which is indicated on a carton as a symbol. Otherwise bent leads may
occur due to excessive stress applied when dropping of a carton.
4) Use products within the specified time after opening a dry bag.
●Precaution for product label
QR code printed on ROHM product label is only for internal use, and please do not use at customer site. It might contain a
internal part number that is inconsistent with an product part number.
●Precaution for disposition
When disposing products please dispose them properly with a industry waste company.
●Precaution for Foreign exchange and Foreign trade act
Since concerned goods might be fallen under controlled goods prescribed by Foreign exchange and Foreign trade act,
please consult with ROHM in case of export.
●Prohibitions Regarding Industrial Property
1) Information and data on products, including application examples, contained in these specifications are simply for
reference; the Company does not guarantee any industrial property rights, intellectual property rights, or any other
rights of a third party regarding this information or data. Accordingly, the Company does not bear any responsibility for:
[a] infringement of the intellectual property rights of a third party
[b] any problems incurred by the use of the products listed herein.
2) The Company prohibits the purchaser of its products to exercise or use the intellectual property rights, industrial
property rights, or any other rights that either belong to or are controlled by the Company, other than the right to use,
sell, or dispose of the products.