© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 6 1Publication Order Number:
MJE371/D
MJE371
Plastic Medium−Power
PNP Silicon Transistor
This device is designed for use in general−purpose amplifier and
switching circuits. Recommended for use in 5 to 20 Watt audio
amplifiers utilizing complementary symmetry circuitry.
Features
•DC Current Gain − hFE = 40 (Min) @ IC
= 1.0 Adc
•MJE371 is Complementary to NPN MJE521
•Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
40
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎ
ÎÎÎÎ
40
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎ
ÎÎÎÎ
4.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
− Peak
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IC
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
4.0
8.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current − Continuous
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
40
320
ÎÎÎ
ÎÎÎ
W
mW/_C
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎÎ
qJC
ÎÎÎÎ
3.12
ÎÎÎ
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless ot herwise noted)
Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0) (Note 1)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎ
ÎÎ
ÎÎ
40
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Cutoff Current
(VCB = 40 Vdc, IE = 0)
ÎÎÎÎ
ÎÎÎÎ
ICBO
ÎÎ
ÎÎ
−
ÎÎÎ
ÎÎÎ
100
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IEBO
ÎÎ
ÎÎ
ÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
100
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎ
ÎÎ
40
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJE371 TO−225 500 Units/Box
4 AMPERES
POWER TRANSISTOR
PNP SILICON
40 VOLTS, 40 WATTS
http://onsemi.com
MJE371G TO−225
(Pb−Free) 500 Units/Box
TO−225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
JE371G
Y = Year
WW = Work Week
JE371 = Device Code
G = Pb−Free Package
MJE371
http://onsemi.com
2
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.5
40
0.1
0.3
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
Figure 1. Active−Region Safe Operating Area
5.0
20106.02.0
TJ = 150°C
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
3.0
0.2
604.0 8.0
1.0ms
dc
100ms
5.0ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN, NORMALIZED
7.0
10
0.02 0.03 0.1 4.00.01
1.0
0.7
0.5
0.1
0.05 0.3 0.50.2
150°CTJ = 25°C
−55 °C
Figure 2. DC Current Gain Figure 3. “On” Voltage
2.0
IC, COLLECTOR CURRENT (AMP)
1.6
0.4
0
TJ = 25°C
VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
5.0
0.3
0.2
1.2
0.8
t, TIME OR PULSE WIDTH (ms)
0.01
0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), EFFECTIVE TRANSIENT
qJC(t) = r(t) qJC
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
THERMAL RESISTANCE (NORMALIZED)
Figure 4. Thermal Response
0.5 D = 0.5
0.1
0.01
0.3
0.7
0.07
0.03
0.02
3.0
2.0
1.0 3.02.0
VCE = 1.0 Vdc
VCE(sat) @ IC/IB = 10
0.01 0.02 0.05 4.00.005 0.03 0.2 0.30.1 0.5 2.0 3.01.0
0.02 0.05 0.3 3.0 500 1000
0.02
0.05
0.2
MJE371
http://onsemi.com
3
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
−A− M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 −−− 1.02 −−−
__
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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MJE371/D
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