2008-04-07
Rev. 2.1 Page 1
SPS01N60C3
Cool MOS™ Power Transistor VDS @ T
j
ma
x
650 V
RDS
(
on
)
6Ω
ID0.8 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• Ultra low effective capacitances
• Improved transconductance
PG-TO251-3-11
Type Package Ordering Code
SPS01N60C3 PG-TO251-3-11 -
Marking
01N60C3
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
0.8
0.5
A
Pulsed drain current, t
p
limited by T
j
ma
x
ID
p
uls 1.6
Avalanche energy, single pulse
ID = 0.6 A, VDD = 50 V
EAS 20 mJ
Avalanche energy, repetitive tAR limited by Tjmax1
)
ID = 0.8 A, VDD = 50 V
EAR 0.01
Avalanche current, repetitive t
A
R limited by T
j
ma
x
I
A
R0.8 A
Gate source voltage static VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 11 W
Operating and storage temperature T
j
,Tst
g
-55... +150 °C
Reverse diode dv/dt dv/dt 15 V/ns
3)
2008-04-07
Rev. 2.1 Page 2
SPS01N60C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 0.8 A, Tj = 125 °C
dv/dt50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 11 K/W
Thermal resistance, junction - ambient, leaded RthJA --75
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
-
75
50
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Tsold - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=0.8A - 700 -
Gate threshold voltage VGS
(
th
)
ID=250µΑ,VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
0.1
-
1
50
µA
Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=0.5A,
Tj=25°C
Tj=150°C
-
-
5.6
15.1
6
-
Ω
2008-04-07
Rev. 2.1 Page 3
SPS01N60C3
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=0.5A
- 0.75 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 100 - pF
Output capacitance Coss - 40 -
Reverse transfer capacitance Crss - 2.5 -
Turn-on delay time td(on) VDD=350V, VGS=0/10V,
ID=0.8A, RG=100Ω
- 30 - ns
Rise time tr- 25 -
Turn-off delay time td(off) - 55 82
Fall time tf- 30 45
Gate Charge Characteristics
Gate to source charge Qgs VDD=350V, ID=0.8A - 0.9 - nC
Gate to drain charge Qgd - 2.2 -
Gate charge total QgVDD=350V, ID=0.8A,
VGS=0 to 10V
- 3.9 5
Gate plateau voltage V
(
plateau
)
VDD=350V, ID=0.8A - 5.5 - V
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
2008-04-07
Rev. 2.1 Page 4
SPS01N60C3
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 0.8 A
Inverse diode direct current,
pulsed
ISM - - 1.6
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=350V, IF=IS ,
diF/dt=100A/µs
- 570 970 ns
Reverse recovery charge Qrr - 0.75 - µC
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.225 K/W
Rth2 0.395
Rth3 0.603
Rth4 0.995
Rth5 0.691
Rth6 0.148
Thermal capacitance
Cth1 0.00001221 Ws/K
Cth2 0.00005037
Cth3 0.0000809
Cth4 0.0002915
Cth5 0.001844
Cth6 0.412
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
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Rev. 2.1 Page 5
SPS01N60C3
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
1
2
3
4
5
6
7
8
9
10
W
12
Ptot
2 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
ZthJC = f(tp)
parameter: D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 5 10 15 V 25
VDS
0
0.5
1
1.5
A
2.5
ID
5V
5.5V
6V
6.5V
7V
20V
10V
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Rev. 2.1 Page 6
SPS01N60C3
5 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 0.5 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
4
8
12
16
20
24
28
Ω
34
RDS(on)
typ
98%
6 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 4 8 12 VGS 20
V
0
0.5
1
1.5
A
2.5
ID
7 Typ. gate charge
VGS =f (QGate)
parameter: ID = 0.8 A pulsed
01234nC 5.5
QGate
0
2
4
6
8
10
12
V
16
VGS
0.2 VDS max
0.8 VDS max
8 Forward characteristics of body diode
IF = f (VSD)
parameter: T
j
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
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Rev. 2.1 Page 7
SPS01N60C3
9 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
A
0.9
IAR
Tj(START)=25°C
Tj(START)=125°C
10 Avalanche energy
EAS = f(Tj)
par.: ID = 0.6 A, VDD = 50 V
25 50 75 100 125 150 °C 200
Tj
0
2
4
6
8
10
12
14
16
18
mJ
22
EAS
11 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
V(BR)DSS
12 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 10 20 30 40 50 60 70 80 V 100
VDS
0
10
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
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Rev. 2.1 Page 8
SPS01N60C3
Definition of diodes switching characteristics
2008-04-07
Rev. 2.1 Page 9
SPS01N60C3
PG-TO-251-3-11
2008-04-07
Rev. 2.1 Page 10
