FIELD - EFFECT TRANSISTOR , SILICON , N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILICIUM , CANAL N *2N 4117,A *2N 4118,A *2N4119,A Very high impedance input stages. Electrometry Etages oentre 4 trs haute impdance. Electromtrie. Maximum power dissipation Dissipation de puissance maximale Ptot 7 (mW) 300 N 200-1 N ; KY V 100+- \ 0. 50 100 150 Tamb (C) 26 Preferred device Dispositif racommand 1pA max 2N 4117 A IGss 1pA max 2N 4118 A 1pA max 2N 4119 A 10 pA max 2N 4117 IGss 10 pA max 2N 4118 10 pA max 2N 4119 30-90 nA 2N 4117,A Ipss 80 - 240 nA 2N 4118, A 200 - 600 pA 2N 4119, A Case TO-72 See outline drawing CB-4 on last pages Boitier Voir dessin cot CB-4 dernires pages M Cys O Weight : Masse : O78 Connection M is connected to case La connexion M est relie au boitier ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES DUTILISATION Tamb = + 25C (Unless otherwise stated) {Sauf indications contraires) Drain-source voltage Tension drain-source VDs 40 v Gate-source voltage Tension grille-source Ves - 40 Vv Gate-drain voltage Tension grille-drain Vao 40 Vv Drain current Courant de drain ID 50 mA Gate current \ Courant de grille G 50 mA Total power dissipation Dissipation totale de puissance Prot 300 mW Storage temperature min T 65 oc Temprature de stockage max stg +175 Operating ambient temperature min T 55 Temprature ambiante de fonctionnement max amb +175 c 78-07 1/5 THOMSON-CSF DIMISION SEMICONOUCTEURS. Ses Som) 793 2N 4117, A 2N 4118, A 2N 4119, A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated) (Sauf indications contraires) Test conditions Conditions de mesure min max = 2N 4117 -10 |pA =0 Vos oe ov 2N 4118 10 |pA Gs 2N 4119 -10 |pA Total gate leakage current =0 2N A117 A 71 pA Courant de fuite totel de grille yes =20V IGss 2N 4118 A 1) [PA Gs 2N 4119 A -1 pA Vps =0 Veg =-20V All types -2,5 [nA GS Tous types Tamb = 150 C Gate source breakdown voltage Vos =9 All types - Vv Tension de claquage grille source Ig =-1HA V(BR)GSS Tous types Drain current Vps = 10V \ 2N 4117, A 0,03 0,09 | mA Courant de drain Veg = 0 DSS 2N 4118,A 0,08 0,24 |mA 2N 4119, A 0,2 0,6 mA Gate source cut-off voltage Vps = 10V Vv 2N 4117,A 0,6 ~18 |v Tension grille source de blocage ip =1nA GS off 2N 4118, A ~4 -3 |v 2N 4119, A -2 -6 Vv DYNAMIC CHARACTERISTICS (For small signals) Tamb = 25C (Unless otherwise stated) CARACTERISTIQUES DYNAMIQUES (Pour petits signaux) am (Sauf indications contraires} Input capacitance Vps = 10V _ C11ss All types 3 pF Capacit dentre Ves =-1V . ; = 1MHz Tous types Reverse transfer capacitance ves : OM C1255 All types 1,5) | pF Capacit de transfert inverse ' G = 1 MHz Tous types Forward transfer admittance Vps = a Vv | Y215 on an i A ies 0 us Admittance de transfert direct Ves = mittance Ge transfert direc: f =1KHz ON 4119, A 400 330 us oO i v =10V 2N 4117,A 3 uS utput admittance Ds | v22s | 2N 4118 A 5 s Admittance de sortie Ves =0 " u f = 1KHz 2N 4119, A 10 us : Vps = 10V 2N 4117,A 60 BS oan rameter admittance Vgs = 0 Re(v2is)| 2N 4118, 70 uS ittance ae transte Hrec. f = 30 MHz ON 4119, A 90 us 2/5 794 2N 4117, A 2N 4118, A 2N 4119, A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Ip Ip (uA) | 2N 4117 (uA) 2N 4118 60 150 50 40 100 30 20 50 10 15V 0 5 10 15 Vps(v} 0 5 10 15 Vps{v) Ip (uA) | 2N 411 250 200 150 2vV 0 5 10 15 Vpstv) 0 ~ N wo 4 Ves (V) 3/5 7956 2N 4117, A 2N 4118, A 2N 4119, A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Igss + (pa) [os == 20 VGSoff DS (Vv) YY 2 -5 102 5 -4 LZ. ; / 101 -3 5 2 -2 f; 100 / A to 5 -1}fA'pss . Vos =10V,Vgsso 2 v to = = 10-1 SS off a Vps=10V,Ip=1ndA 50 100 150 Tiyj) (OC) 0 0,2 0,4 0,6 Ipsg (mA) DYNAMIC CHARACTERISTIC. CARACTERISTIQUES DYNAMIQUE \Y21d | vps=10V (ms) |f = 1 KHz 0,15 . 0,1 0,05 0 0,5 1 15. Vg@siV) 4/5 796 2N 4117, A 2N 4118, A 2N 4119, A DYNAMIC CHARACTERISTICS CARACTERISTIQUES DYNAMIQUES C12sg Tamb = 26C (PFE f = 1MHz Vps = 10V 2 101 2 4 8 109 Ves (V) C11ss Tamb = 25C (pF) Vps=ov Vos =10V. 10-1 10-1 f = 1MHz 5/5 797