IXTC240N055T - IXYS - Pdf.Support

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 250 μA55V

VGS(th) VDS = VGS, ID = 1 mA 2.0 4.0 V

IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA

IDSS VDS = VDSS 5μA

VGS = 0 V TJ = 150°C 250 μA

RDS(on) VGS = 10 V, ID = 50 A, Note 1 4.0 mΩ

TrenchMVTM

Power MOSFET

(Electrically Isolated Back Surface)

Preliminary Technical Information

N-Channel Enhancement Mode

Avalanche Rated

IXTC240N055T VDSS =55 V

ID25 = 132 A

RDS(on) ≤≤

≤≤

≤4.0 mΩΩ

ΩΩ

Ω

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C55V

VDGR TJ= 25°C to 175°C; RGS = 1 MΩ55 V

VGSM Transient ± 20 V

ID25 TC= 25°C 132 A

ILPackage Current Limit, RMS 75 A

IDM TC= 25°C, pulse width limited by TJM 650 A

IAR TC= 25°C25A

EAS TC= 25°C 500 mJ

dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 3 V/ns

TJ≤ 175°C, RG = 5 Ω

PDTC= 25°C 150 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

VISOL 50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS 2500 V

FCMounting force ISOPLUS240 11..65/2.5..15 N/lb.

Weight 2g

G = Gate D = Drain

S = Source

GDS

ISOPLUS240 (IXTC)

E153432

Isolated back surface

DS99628(11/06)

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

175 °C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Applications

Automotive

- Motor Drives

- High Side Switch

- 12V Battery

- ABS Systems

 DC/DC Converters and Off-line UPS

Primary- Side Switch

 High Current Switching

Applications

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTC240N055T

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm from

the plastic body.

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified)

Min. Typ. Max.

gfs VDS= 10 V; ID = 60 A, Note 1 80 132 S

Ciss 7600 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1240 pF

Crss 260 pF

td(on) 40 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 54 ns

td(off) RG = 5 Ω (External) 63 ns

tf75 ns

Qg(on) 170 nC

Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25A 32 nC

Qgd 48 nC

RthJC 1.0 °C/W

RthCS 0.25 °CW

Source-Drain Diode Characteristic Values

TJ = 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0 V 240 A

ISM Pulse width limited by TJM 650 A

VSD IF = 50 A, VGS = 0 V, Note 1 1.0 V

trr IF = 25 A, -di/dt = 100 A/μs30ns

VR = 30 V, VGS = 0 V

Note: Bottom heatsink (Pin 4) is

electrically isolated from Pins 1,2, and 3.

1.Gate 2. Drain

3.Source

ISOPLUS240 (IXTC) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary

engineering lots; but also may yet contain some information supplied during a pre-

production design evaluation. IXYS reserves the right to change limits, test conditions,

and dimensions without notice.

IXTC240N055T

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

0 0.10.20.30.40.50.60.7

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

330

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

7V

5V

Fig. 3. Output Characteristics

@ 150ºC

0

20

40

60

80

100

120

140

160

180

200

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 120A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 240A

I

D

= 120A

Fig. 5. R

DS(on)

Normalized to I

D

= 120A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

0 40 80 120 160 200 240 280 320

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V - - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

ID - Amperes

External Lead Current Limit

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTC240N055T

Fig. 7. Input Admittance

0

30

60

90

120

150

180

210

240

270

3 3.5 4 4.5 5 5.5 6 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

160

180

200

0 40 80 120 160 200 240 280

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

150ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

30

60

90

120

150

180

210

240

270

300

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160 180

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 27.5V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Impedance

0.01

0.10

1.00

10.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

IXTC240N055T

IXYS REF: T_240N055T (61) 11-16-06-B.xls

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

30

33

36

39

42

45

48

51

54

57

60

25 30 35 40 45 50

I

D

- Amperes

t

r

- Nanosecond

s

R

G

= 5Ω

V

GS

= 10V

V

DS

= 30V

T

J

= 125ºC

T

J

= 25ºC

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

20

40

60

80

100

120

140

160

180

4 6 8 101214161820

R

G

- Ohms

t

r

- Nanoseconds

34

38

42

46

50

54

58

62

66

t

d ( o n )

- Nanoseconds

t

r

t

d(on)

- - - -

TJ = 125ºC, V

GS

= 10V

V

DS

= 30V I

D

= 50A

25A

I

D

= 50A

25A

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

58

60

62

64

66

68

70

72

74

76

78

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanosecond

s

60

64

68

72

76

80

84

88

92

96

100

t

d ( o f f )

- Nanosecond

s

t

f

t

d(off)

- - -

-

R

G

= 5Ω, V

GS

= 10V

V

DS

= 30V

I

D

= 25A

I

D

= 50A

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

58

60

62

64

66

68

70

72

74

76

78

24 28 32 36 40 44 48

I

D

- Amperes

t

f

- Nanoseconds

60

64

68

72

76

80

84

88

92

96

100

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, VGS = 10V

VDS = 30V

TJ = 25ºC, 125ºC

T

J

= 25ºC, 125ºC

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

30

33

36

39

42

45

48

51

54

57

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanosecond

s

R

G

= 5Ω

V

GS

= 10V

V

DS

= 30V

I

D

= 50A

I

D

= 25A

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

50

75

100

125

150

175

200

225

4 6 8 101214161820

R

G

- Ohms

t

f

- Nanoseconds

60

100

140

180

220

260

300

340

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, VGS = 10V

VDS = 30V

I

D

= 50A

I

D

= 25A