BUT70W
HIGH POWER NP N T RAN SISTOR
■STMicroelectronics PREFERRED
SALESTYPE
■N PN T R ANSIST O R
■HIGH CURRE NT CAP ABI LITY
■FAST SWIT CHING SPE ED
■VERY LOW SATURATION VOLTAGE AND
HI GH GAI N
APPLIC A TION
■SWI TCHING RE GULATO RS
■MOTOR CONTROL
■HIGH FREQUENCY AND EFFICENCY
CONVERTERS
DESCRIP TION
The BUT70W is a Multiepitaxial planar NPN
transistor in TO-247 plastic package.
It’s intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment .
®
INTERNAL SCHEMATIC DIAGRAM
February 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-emitter Voltage (VBE = -1.5V) 200 V
VCEO Collector-emitter Voltage (IB = 0) 125 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IE(RMS) Emitter Current 40 A
IEM Emitter Peak Current 120 A
IBBase Current 8 A
IBM Base Peak Current 24 A
Ptot Total Power Dissipation at Tcase < 25 oC200 W
Tstg Stora ge Te mperature -65 to 150 oC
TjMax Operating Junction Temperature 150 oC
123
TO-247
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.63 oC/W
ELECTRICAL CHARACTERI STICS (Tcase = 25 oC unless other wise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICER Collecto r Cut-off
Current (RBE = 5Ω)VCE = 200 V
VCE = 200 V TC = 100oC1
5mA
mA
ICEV Collecto r Cut-off
Current (VBE = -1.5V) VCE = 200 V
VCE = 200 V TC = 100oC1
4mA
mA
IEBO Emitter Cut-off
Current (IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A L = 25 mH 125 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 50 mA 7 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 70 A IB = 7 A
IC = 70 A IB = 7 A TC = 100oC
IC = 35 A IB = 1.75 A
IC = 35 A IB = 1.75 A TC = 100oC
0.9
1.5
0.9
1.2
V
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 70 A IB = 7 A
IC = 70 A IB = 7 A TC = 100oC
IC = 35 A IB = 1.75 A
IC = 35 A IB = 1.75 A TC = 100oC
1.8
1.9
1.4
1.4
V
V
V
V
dic/dt∗Rated of Rise of
on-state Collector
Current
VCC = 100 V RC = 0 IB1 = 3.5 A
tp = 3 µs TC = 100oC140 A/µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 %
INDUC TIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ts
tf
tc
Storage Time
Fall Time
Cross Over Time
IC = 35 A VCC = 90 V
VBB = -5 V RB2 = 1 .4 Ω
ΙB1 = 1.75 A LC = 0.15 mH
VCLAMP = 125V TC = 100oC
1.8
0.2
0.35
µs
µs
µs
BUT70W
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
P025P
TO-247 MECHANICAL DATA
BUT70W
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of use of such inform ation nor for any in fringe ment o f patents or other rig hts of th ird part ies which may re sult fro m its u se. N o li cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specif ication menti oned in this publicati on are
subject to change without notice. This publication supersedes and replac es all information previously supplie d. STMicroelectronics products
ar e not aut horized f or use as critical components in life support devices or systems without express written approval of STMicroel ectronics.
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BUT70W
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