BSH105,235 - NXP Semiconductors / Philips Semiconductors

Philips Semiconductors Product specification

N-channel enhancement mode BSH105

MOS transistor

FEATURES SYMBOL QUICK REFERENCE DATA

• Very low threshold voltage VDS = 20 V

• Fast switching

• Logic level compatible ID = 1.05 A

• Subminiature surface mount

package RDS(ON) ≤ 250 mΩ (VGS = 2.5 V)

VGS(TO) ≥ 0.4 V

GENERAL DESCRIPTION PINNING SOT23

N-channel, enhancement mode, PIN DESCRIPTION

logic level, field-effect power

transistor. This device has very low 1 gate

threshold voltage and extremely

fast switching making it ideal for 2 source

battery powered applications and

high speed digital interfacing. 3 drain

The BSH105 is supplied in the

SOT23 subminiature surface

mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDS Drain-source voltage - 20 V

VDGR Drain-gate voltage RGS = 20 kΩ-20V

VGS Gate-source voltage - ± 8V

IDDrain current (DC) Ta = 25 ˚C - 1.05 A

Ta = 100 ˚C - 0.67 A

IDM Drain current (pulse peak value) Ta = 25 ˚C - 4.2 A

Ptot Total power dissipation Ta = 25 ˚C - 0.417 W

Ta = 100 ˚C - 0.17 W

Tstg, TjStorage & operating temperature - 55 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Rth j-a Thermal resistance junction to FR4 board, minimum 300 - K/W

ambient footprint

Top view

August 1998 1 Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode BSH105

MOS transistor

ELECTRICAL CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 10 µA20--V

voltage

VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 0.4 0.57 - V

Tj = 150˚C 0.1 - - V

RDS(ON) Drain-source on-state VGS = 4.5 V; ID = 0.6 A - 140 200 mΩ

resistance VGS = 2.5 V; ID = 0.6 A - 180 250 mΩ

VGS = 1.8 V; ID = 0.3 A - 240 300 mΩ

VGS = 2.5 V; ID = 0.6 A; Tj = 150˚C - 270 375 mΩ

gfs Forward transconductance VDS = 16 V; ID = 0.6 A 0.5 1.6 - S

IGSS Gate source leakage current VGS = ±8 V; VDS = 0 V - 10 100 nA

IDSS Zero gate voltage drain VDS = 16 V; VGS = 0 V; - 50 100 nA

current Tj = 150˚C - 1.3 10 µA

Qg(tot) Total gate charge ID = 1 A; VDD = 20 V; VGS = 4.5 V - 3.9 - nC

Qgs Gate-source charge - 0.4 - nC

Qgd Gate-drain (Miller) charge - 1.4 - nC

td on Turn-on delay time VDD = 20 V; ID = 1 A; - 2 - ns

trTurn-on rise time VGS = 8 V; RG = 6 Ω- 4.5 - ns

td off Turn-off delay time Resistive load - 45 - ns

tfTurn-off fall time - 20 - ns

Ciss Input capacitance VGS = 0 V; VDS = 16 V; f = 1 MHz - 152 - pF

Coss Output capacitance - 71 - pF

Crss Feedback capacitance - 33 - pF

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IDR Continuous reverse drain Ta = 25 ˚C - - 1.05 A

current

IDRM Pulsed reverse drain current - - 4.2 A

VSD Diode forward voltage IF = 0.5 A; VGS = 0 V - 0.74 1 V

trr Reverse recovery time IF = 0.5 A; -dIF/dt = 100 A/µs; - 27 - ns

Qrr Reverse recovery charge VGS = 0 V; VR = 16 V - 19 - nC

August 1998 2 Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode BSH105

MOS transistor

Fig.1. Normalised power dissipation.

PD% = 100

⋅

D 25 ˚C

= f(T

)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅

D 25 ˚C

= f(T

); conditions: V

≥

4.5 V

Fig.3. Safe operating area. T

= 25 ˚C

& I

= f(V

); I

single pulse; parameter t

Fig.4. Transient thermal impedance.

th j-a

= f(t); parameter D = t

Fig.5. Typical output characteristics, T

= 25 ˚C

= f(V

); parameter V

Fig.6. Typical on-state resistance, T

= 25 ˚C

DS(ON)

= f(I

); parameter V

Normalised Power Dissipation, PD (%)

100

120

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

BSH105

0.1

100

1000

1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Pulse width, tp (s)

Peak Pulsed Drain Current, IDM (A)

single pulse

D = 0.5

0.2

0.1 0.05

0.02 tp D = tp/T

Normalised Drain Current, ID (%)

100

120

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

BSH105

0.5

1.5

2.5

3.5

4.5

0 0.5 1 1.5 2

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

1.1 V

1.5 V

1.3 V

1.7 V

4.5V

Tj = 25 C

2.5V

VGS = 1.9 V

2.1 V

BSH105

0.01

0.1

100

0.1 1 10 100

Drain-Source Voltage, VDS (V)

Peak Pulsed Drain Current, IDM (A)

d.c. 100 ms

10 ms

RDS(on) = VDS/ ID

tp = 100 us

1 ms

BSH105

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS = 4.5 V

2.5 V

2.1 V

1.9 V

1.7 V

Tj = 25 C

1.5 V

August 1998 3 Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode BSH105

MOS transistor

Fig.7. Typical transfer characteristics.

= f(V

)

Fig.8. Typical transconductance, T

= 25 ˚C

= f(I

)

Fig.9. Normalised drain-source on-state resistance.

DS(ON)

DS(ON)25 ˚C

= f(T

)

Fig.10. Gate threshold voltage.

GS(TO)

= f(T

); conditions: I

= 1 mA; V

= V

Fig.11. Sub-threshold drain current.

= f(V

GS)

; conditions: T

= 25 ˚C

Fig.12. Typical capacitances, C

iss

, C

oss

, C

rss

C = f(V

); conditions: V

= 0 V; f = 1 MHz

BSH105

0.5

1.5

2.5

0 0.5 1 1.5 2 2.5 3

Gate-Source Voltage, VGS (V)

VDS > ID X RDS(on)

Tj = 25 C

150 C

Drain Current, ID (A) Threshold Voltage, VGS(to), (V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0 25 50 75 100 125 150

Junction Temperature, Tj (C)

minimum

typical

BSH105

0.5

1.5

2.5

3.5

0 0.5 1 1.5 2 2.5 3

Drain Current, ID (A)

Transconductance, gfs (S) BSH105

1E-07

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

0 0.2 0.4 0.6 0.8 1

Gate-Source Voltage, VGS (V)

Drain Current, ID (A)

VDS = 5 V

Tj = 25 C

Normalised Drain-Source On Resistance

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

0 25 50 75 100 125 150

Junction Temperature, Tj (C)

VGS = 4.5 V 2.5 V

1.8 V

RDS(ON) @ Tj

RDS(ON) @ 25C

BSH105

100

1000

0.1 1 10 100

Drain-Source Voltage, VDS (V)

Capacitances, Ciss, Coss, Crss (pF)

Ciss

Coss

Crss

August 1998 4 Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode BSH105

MOS transistor

Fig.13. Typical turn-on gate-charge characteristics.

= f(Q

)Fig.14. Typical reverse diode current.

= f(V

SDS

); conditions: V

= 0 V; parameter T

BSH105

02468

Gate charge, QG (nC)

VDD = 20 V

RD = 20 Ohms

Tj = 25 C

Gate-source voltage, VGS (V) BSH105

-5

-4.5

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0-1.2-1-0.8-0.6-0.4-0.20

Drain-Source Voltage, VSDS (V)

Source-Drain Diode Current, IF (A)

Tj = 25 C

150 C

August 1998 5 Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode BSH105

MOS transistor

MECHANICAL DATA

Fig.15. SOT23 surface mounting package.

Notes

1. This product is supplied in anti-static packaging. The gate-source input must be protected against static

discharge during transport or handling.

2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.

3. Epoxy meets UL94 V0 at 1/8".

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

August 1998 6 Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode BSH105

MOS transistor

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

August 1998 7 Rev 1.000