MURS140, MURS160 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Glass passivated chip junction * Ideal for automated placement * Ultrafast reverse recovery time * Low switching losses, high efficiency * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified DO-214AA (SMB) * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 400 V, 600 V IFSM 35 A trr 50 ns VF 1.05 V TJ max. 175 C MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code MURS140 MURS160 MG MJ UNIT Maximum repetitive peak reverse voltage VRRM 400 600 V Working peak reverse voltage VRWM 400 600 V Maximum DC blocking voltage VDC 400 600 V Maximum average forward rectified current at (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range TL = 150 C TL = 125 C IF(AV) 1.0 2.0 A IFSM 35 A TJ, TSTG - 65 to + 175 C Document Number: 88688 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 17-Nov-11 MURS140, MURS160 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage IF = 1.0 A SYMBOL TJ = 25 C MURS160 5.0 50 trr IF = 1.0 A, dI/dt = 50 A/s, VR = 30 V, Irr = 10 % IRM IF = 1.0 A, dI/dt = 100 A/s, recovery to 1.0 V Maximum forward recovery time A 150 IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum reverse recovery time V 1.05 IR (1) TJ = 150 C UNIT 1.25 VF (1) TJ = 150 C TJ = 25 C Maximum instantaneous reverse current at rated DC blocking voltage MURS140 ns 75 tfr 50 ns Note (1) Pulse test: t = 300 s pulse, duty cycle 2 % p THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to ambient MURS140 RJL MURS160 UNIT 13 C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MURS160-E3/52T 0.096 52T 750 7" diameter plastic tape and reel 0.096 5BT 3200 13" diameter plastic tape and reel MURS160-E3/5BT (1) 0.096 52T 750 7" diameter plastic tape and reel MURS160HE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel MURS160HE3/52T Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 50 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 40 30 20 10 0 0 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (C) Number of Cycles at 50 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Document Number: 88688 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 17-Nov-11 MURS140, MURS160 www.vishay.com Vishay General Semiconductor 100 TJ = 175 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 TJ = 100 C TJ = 25 C 0.1 0.01 0 0.4 1.2 0.8 1.6 2.0 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 2.4 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Leakage Current (A) 100 TJ = 175 C 10 1 TJ = 100 C 0.1 0.01 TJ = 25 C 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 88688 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 17-Nov-11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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