PBSS5580PA,115 - NEXPERIA

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1. Product profile

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

medium power capability.

NPN complement: PBSS4580PA.

1.2 Features and benefits

Low collector-emitter saturation voltage VCEsat

High collector current capability IC and ICM

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Exposed heat sink for excellent thermal and electrical conductivity

Leadless small SMD plastic package with medium power capability

1.3 Applications

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

[1] Pulse test: tp≤300 μs; δ≤0.02.

PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

Rev. 01 — 6 May 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - −80 V

ICcollector current - - −4A

ICM peak collector current single pulse;

tp≤1ms --−5A

RCEsat collector-emitter

saturation resistance IC=−4A;

IB=−200 mA [1] -65105mΩ

Product data sheet Rev. 01 — 6 May 2010 2 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Ta ble 2. Pinnin g

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

Transparent top view

sym01

Table 3. Ordering i nformation

Type number Package

Name Description Version

PBSS5580PA HUSON3 plastic thermal enhanced ultra thin small outline package;

no leads; three terminals; body 2 ×2×0.65 mm SOT1061

Table 4. Marking codes

Type number Marking code

PBSS5580PA AF

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - −80 V

VCEO collector-emitter voltage open base - −80 V

VEBO emitter-base voltage open collector - −7V

ICcollector current - −4A

ICM peak collector current single pulse;

tp≤1ms -−5A

IBbase current - −600 mA

Ptot total power dissipation Tamb ≤25 °C[1] -500mW

[2] -1W

[3] -1.4W

[4] -2.1W

Product data sheet Rev. 01 — 6 May 2010 3 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, mounting pad for collector 1 cm2

(4) FR4 PCB, standard footprint

Fig 1. Power derating curves

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Tamb (°C)

−75 17512525 75−25

006aab978

1.0

1.5

0.5

2.0

2.5

Ptot

(W)

0.0

(1)

(3)

(2)

(4)

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --250K/W

[2] --125K/W

[3] --90K/W

[4] --60K/W

Product data sheet Rev. 01 — 6 May 2010 4 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

FR4 PCB, standard footprint

Fig 2. Transient thermal impe da n ce from ju nc tio n to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for collector 1 cm2

Fig 3. Transient thermal impe da n ce from ju nc tio n to ambient as a function of pulse duration; typical values

006aab979

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

006aab980

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

Product data sheet Rev. 01 — 6 May 2010 5 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

FR4 PCB, mounting pad for collector 6 cm2

Fig 4. Transient thermal impe da n ce from ju nc tio n to ambient as a function of pulse duration; typical values

Ceramic PCB, Al2O3, standard footprint

Fig 5. Transient thermal impe da n ce from ju nc tio n to ambient as a function of pulse duration; typical values

006aab981

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

006aab982

10−51010−2

10−4102

10−1

tp (s)

10−3103

102

Zth(j-a)

(K/W)

10−1

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

Product data sheet Rev. 01 — 6 May 2010 6 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

Ta ble 7. Ch aracteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base

cut-off current VCB =−64 V; IE=0A - - −100 nA

VCB =−64 V; IE=0A;

Tj= 150 °C--−50 μA

ICES collector-emitter

cut-off current VCE =−64 V; VBE =0V - - −100 nA

IEBO emitter-base

cut-off current VEB =−5V; I

C=0A - - −100 nA

hFE DC current gain VCE =−2V [1]

IC=−0.5 A 180 265 -

IC=−1 A 160 240 -

IC=−2 A 140 200 -

IC=−4A 70 110 -

VCEsat collector-emitter

saturation voltage IC=−0.5 A; IB=−50 mA [1] -−40 −60 mV

IC=−1A; I

B=−50 mA [1] -−75 −120 mV

IC=−4A; I

B=−400 mA [1] -−205 −320 mV

IC=−4A; I

B=−200 mA [1] -−265 −420 mV

RCEsat collector-emitter

saturation resistance IC=−4A; I

B=−200 mA [1] - 65 105 mΩ

VBEsat base-emitter

saturation voltage IC=−1A; I

B=−10 mA [1] -−0.75 −0.9 V

IC=−4A; I

B=−200 mA [1] -−0.95 −1.1 V

VBEon base-emitter

turn-on voltage VCE =−2V; I

C=−2A [1] -−0.75 −0.9 V

tddelay time VCC =−9V; I

C=−2A;

IBon =−0.1 A;

IBoff =0.1A

-18-ns

trrise time - 82 - ns

ton turn-on time - 100 - ns

tsstorage time - 360 - ns

tffall time - 85 - ns

toff turn-off time - 445 - ns

fTtransition frequency VCE =−10 V;

IC=−100 mA;

f=100MHz

70 110 - MHz

Cccollector capacitance VCB =−10 V;

IE=i

e=0A; f=1MHz - 4560pF

Product data sheet Rev. 01 — 6 May 2010 7 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

VCE =−2V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 6. DC current gain as a function of collector

current; typical values Fig 7. Collector current as a fun ction of

collector-emitter voltage; typical values

VCE =−2V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 8. Base-emitter voltage as a function of collector

current; typical values Fig 9. Base-emitter saturation voltage as a function

of collector current; typica l values

006aac088

200

400

600

hFE

IC (mA)

−10−1−104

−103

−1−102

−10

(2)

(1)

(3)

VCE (V)

0.0 −5.0−4.0−2.0 −3.0−1.0

006aac089

−2.0

−4.0

−6.0

(A)

0.0

−5

−10

−40

−45

−35

−30

−25

−20

−15

IB (mA) = −50

006aac090

−0.4

−0.8

−1.2

VBE

(V)

0.0

IC (mA)

−10−1−104

−103

−1−102

−10

(2)

(1)

(3)

006aac091

−0.4

−0.8

−1.2

VBEsat

(V)

0.0

IC (mA)

−10−1−104

−103

−1−102

−10

(2)

(1)

(3)

Product data sheet Rev. 01 — 6 May 2010 8 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 10. C ol le cto r -emitter saturation voltage as a

function of collector current; typical values Fig 11. Collector-emitter sa turation voltage as a

function of collector current; typical values

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values Fig 13. Collector-emitter saturation resistance as a

function of collector current; typical values

006aac092

IC (mA)

−10−1−104

−103

−1−102

−10

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

006aac093

−1

−10−1

−10

VCEsat

(V)

−10−2

IC (mA)

−10−1−104

−103

−1−102

−10

(2)

(1)

(3)

IC (mA)

−10−1−104

−103

−1−102

−10

006aac094

10−1

102

103

RCEsat

(Ω)

10−2

(3)

(1)

(2)

IC (mA)

−10−1−104

−103

−1−102

−10

006aac095

10−1

102

103

RCEsat

(Ω)

10−2

(3)

(1)

(2)

Product data sheet Rev. 01 — 6 May 2010 9 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

8. Test information

Fig 14. BISS transistor switching time definition

VCC =−9V; I

C=−2A; I

Bon =−0.1 A; IBoff =0.1A

Fig 15. Test circu it for swi t ch ing times

006aaa266

−IBon (100 %)

−IB

input pulse

(idealized waveform)

−IBoff

90 %

10 %

−IC (100 %)

−IC

ton

90 %

10 %

output pulse

(idealized waveform)

toff

DUT

mgd624

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Product data sheet Rev. 01 — 6 May 2010 10 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 16. Package outline SOT1061 (HUSON3)

09-11-12Dimensions in mm

0.65

max

2.1

1.9

1.6

1.4

0.35

0.25

0.45

0.35

2.1

1.9

1.1

0.9

0.3

0.2

1.05

0.95

1.3

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packin g quantity

3000

PBSS5580PA SOT1061 4 mm pitch, 8 mm tape and reel -115

Product data sheet Rev. 01 — 6 May 2010 11 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 17. Reflow soldering footprint SOT1061 (HUSON3)

occupied area

solder paste = solder lands Dimensions in mm

sot1061_fr

solder resist

0.4

2.1

1.3

0.25

0.25 0.25

1.1 1.2

0.55

0.6

2.3

0.5 (2×)

0.5 (2×) 0.6 (2×)

0.4 (2×)

0.5

1.6

1.7

1.05

Product data sheet Rev. 01 — 6 May 2010 12 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS5580PA v.1 20100506 Product data sheet - -

Product data sheet Rev. 01 — 6 May 2010 13 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

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deemed to off er functions and qualities beyond those described in the

Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

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representations or warrant ies, expressed or implied, as to the accuracy or

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Notwithstanding any damages that customer might incur for any reason

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

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malfunction of an NXP Semiconductors product can reasonably be expected

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damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

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damage, costs or problem which is based on any weakness or default in the

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testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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Export control — This document as well as the item(s) described herein

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 01 — 6 May 2010 14 of 15

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product cl aims resulting f rom customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specificat ions.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to : salesaddresses@nxp.com

NXP Semiconductors PBSS5580PA

80 V, 4 A PNP low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 May 201 0

Document identifier: PBSS5580PA

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15