Continental Device India Limited Data Sheet Page 2 of 3
Collector current (peak tp = 10 ms) ICM max. 12 A
Collector current
(non-repetitive peak t
p
= 2 ms)
ICSM max. 25 A
Base current IBmax. 3.0 A
Total power dissipation up to Tmb = 25°C Ptot max. 60 W
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to ambient Rth j–a 70 K/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 202 204 BDX78
Collector cutoff current
IB = 0; VCE = 30 V ICEO max. 0.2 mA
IB = 0; VCB = 40 V; Tj = 150°C ICBO max. 1.0 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 0.5 mA
Breakdown voltages
IC = 0.2 A; IB = 0 VCEO min. 45 60 80 V
IC = 1 mA; IE = 0 VCBO min. 60 60 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 3 A; IB = 0.3 A VCEsat* max. 1.0 V
IC = 6 A; IB = 0.6 A VCEsat* max. 1.5 V
VBEsat* max. 2.0 V
Base-emitter on voltage
IC = 3 A; VCE = 2 V VBE(on)* max. 1.5 V
D.C. current gain
IC = 1 A; VCE = 2 V hFE* min. – – 30
IC = 2 A; VCE = 2 V hFE* min. – 30 –
IC = 3 A; VCE = 2 V hFE* min. 30 – –
Common emitter small
IC = 0.3 A; VCE = 3 V fhfe min. 25 KHz
Transition frequency
IC = 0.3 A; VCE = 3 V; f = 1 MHz fTmin. 7.0 MHz
Second breakdown collector current
with base forward biased (non-repetitive)
VCE = 40 V; tp = 0.1 s IS/b min. 1.5 A
Switching time
ICon = 2A; IBon = IBoff = 0.2A
Turn on time ton max. 1 µs
Turn off time toff max. 2 µs
* Pulse test: tp ≤ 300 µs; duty cycle ≤ 2%.
BD202, BD204, BDX78