DIM200PHM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
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Replaces June 2003 version, issue PDS5606-2.1 PDS5606-3.1 April 2004
FEATURES
■Soft Punch Through Silicon
■10µs Short Circuit Withstand
■Isolated MMC Base with AlN Substrates
■High Thermal Cycling Capability
APPLICATIONS
■High Reliability Inverters
■Motor Controllers
■Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200PHM33-F000 is a half bridge 3300V soft punch
through, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PHM33-F000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
VCES 3300V
VCE(sat) * (typ) 2.8V
IC(max) 200A
IC(PK) (max) 400A
* Measured at auxiliary terminals.
DIM200PHM33-F000
Half Bridge IGBT Module
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: P
(See package details for further information)
3(E2)
2(C1)
1(E1/C2)
7(E
2)
6(G
2)
8(C
1)
5(E
1)
4(G
1)
DIM200PHM33-F000
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Test Conditions
VGE = 0V, Tj = –25˚C
-
Tcase = 90˚C
1ms, Tcase = 115˚C
Tcase = 25˚C, Tj = 150˚C
VR = 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
Symbol
VCES
VGES
IC
IC(PK)
Pmax
I2t
Visol
QPD
Units
V
V
A
A
kW
kA2s
V
pC
Max.
3300
±20
200
400
2.6
20
6000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
DIM200PHM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9
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THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 33mm
Clearance: 20mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M5
Parameter
Thermal resistance - transistor (per switch)
Thermal resistance - diode (per switch)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Max.
48
96
16
150
125
125
5
4
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
-
-
DIM200PHM33-F000
4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC =20mA, VGE = VCE
VGE = 15V, IC = 200A
VGE = 15V, IC = 200A, , Tcase = 125˚C
DC
tp = 1ms
IF = 200A
IF = 200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
VCE = 25V, VGE = 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 2500V,
I1
t
p
≤ 10µs,
V
CE(max)
= V
CES
– L*. di/dt
I2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance - pins 2 & 3
Internal transistor resistance - pins 2 & 3
Short circuit. ISC
Symbol
ICES
IGES
VGE(TH)
VCE(sat)
†
IF
IFM
VF
†
Cies
Cres
LM
RINT
SCData
Units
mA
mA
nA
V
V
V
A
A
V
V
nF
nF
nH
mΩ
A
A
Max.
1
15
-
7.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
400
6.5
2.8
3.6
200
400
2.9
3.0
36
0.55
40
0.5
1000
930
Min.
-
-
-
5.5
-
-
-
-
-
-
-
-
-
-
-
-
Note:
† Measured at auxiliary terminals.
L* is the circuit inductance + LM
DIM200PHM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
µC
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) =16.5Ω
Cge = 56nF
L ~ 100nH
IC = 200A, VGE = ±15V, VCE = 1800V,
RG(ON) = 7.5Ω, Cge = 56nF, L ~ 100nH
IF = 200A, VR = 1800V,
dIF/dt = 1600A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Gate charge
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
Qg
EON
Qrr
Irr
EREC
Tcase = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
2200
190
265
1150
280
390
125
155
130
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) =16.5Ω
Cge = 56nF, L ~ 100nH
IC = 200A, VGE = ±15V, VCE = 1800V,
RG(ON) =7.5Ω, Cge = 56nF, L ~ 100nH
IF = 200A, VR = 1800V,
dIF/dt = 1600A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Typ.
1950
170
220
1180
225
5
290
80
144
75
DIM200PHM33-F000
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
0
100
200
300
400
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Switching energy, Esw - (mJ)
Eon (mJ)
Eoff (mJ)
Erec (mJ)
Conditions:
Tc = 125˚C,
Rg(on) = 7.5 Ohms,
Rg(off) = 16.5 Ohms
Cge = 56nF,
Vcc = 1800V,
Vge = ±15V
0
200
400
600
800
1000
1200
1400
0 8 16 24 32 40 48 56
Gate resistance, R
g
- (ohms)
Switching energy, E
sw
- (mJ)
Conditions:
T
c
= 125˚C,
I
C
= 200A,
V
cc
= 1800V,
C
ge
= 56nF,
V
ge
= ±15V
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
0
100
200
300
400
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 25˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
0
100
200
300
400
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 125˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
DIM200PHM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/9
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance
IGBT R
i
(˚C/KW)
τ
i
(ms)
Diode R
i
(˚C/KW)
τ
i
(ms)
1
1.79
0.13
3.58
0.13
2
11.26
5.80
22.52
5.80
3
15.77
48.03
31.53
48.03
4
19.11
248.53
38.23
248.53
Diode
Transistor
0.1
1
10
100
0.001 0.01 10.1 10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
0
100
200
300
400
500
0 500 1000 1500 2000 2500 3000 3500
Collector emitter voltage, Vce - (V)
Collector current, IC - (A)
Conditions:
Tcase = 125˚C,
Vge = ±15V,
Rg(off) = 16.5 Ohms,
Cge = 56nF
Module
Chip
0
50
100
150
200
250
300
350
0 500 1000 1500 2000 2500 3000 3500
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125˚C
0
50
100
150
200
250
300
350
400
450
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 25˚C
T
j
= 125˚C
DIM200PHM33-F000
8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 750g
Module outline type code: P
3(E2)
2(C1)
1(E1/C2)
7(E
2)
6(G
2)
8(C
1)
5(E
1)
4(G
1)
Fig. 11 Package details
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97.
France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
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as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
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