ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 2300 MHz. 2 OD B .060 x 45 CHAMFER 3 C E 1 G FEATURES: L * PG = 9.5 dB min. at 2 W / 2300 MHz * Hermetic Microstrip Package * OmnigoldTM Metalization System * Diffused Ballasting PDISS 7.0 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C JC 25 C/W CHARACTERISTICS BVCBO BVCER IC = 5 mA BVEBO IE = 1 mA ICBO VCB = 22 V hFE VCE = 5.0 V Cob VCB = 22 V VCC = 22 V .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 2 = Emitter 3 = Base ORDER CODE: ASI10534 TC = 25 C IC = 1 mA PG C VSWR inches / mm A 1 = Collector NONETEST CONDITIONS SYMBOL MAXIMUM inches / mm G 300 mA NP MINIMUM F 26 V I K DIM E VCC J M MAXIMUM RATINGS IC F H RBE = 10 IC = 100 mA MINIMUM TYPICAL MAXIMUM V 44 V 3.5 V 10 f = 1.0 MHz POUT = 2.0 W f = 2.3 GHz UNITS 44 0.5 mA 300 --- 4.0 pF 40 dB % --- 8.0 20:1 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1