3
2N4401 / MMBT4401
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
BR
CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V
BR
CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 60 V
V
BR
EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V
IBL Base Cuto ff Current VCE = 35 V, VEB = 0.4 V 0.1 µA
ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
20
40
80
100
40 300
VCE(sat)Collecto r-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 0.4
0.75 V
V
VBE(sat)Base-Emitter Saturation Vo ltage IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 0.75 0.95
1.2 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,
f = 100 MHz 250 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0,
f = 140 kHz 6.5 pF
Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0,
f = 140 kHz 30 pF
hie Input Impedance IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 1.0 15 kΩ
hre Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 0.1 8.0 x 10-4
hfe Sma ll-Signal Curre nt Gain IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 40 500
hoe Output Admittance IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 1.0 30 µmhos
SWITCHING CHARACTERISTICS
td
Delay Time VCC = 30 V, VEB = 2 V, 15 ns
t
Rise Time IC = 150 mA, IB1 = 15 mA 20 ns
tsStorage Time VCC = 30 V, IC = 150 mA 225 ns
tfFall Time IB1 = IB2 = 15 mA 30 ns
*Pulse Test: Pulse Wid th ≤ 300 µs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Conditions Min Max Units
NPN General Purpose Amplifier
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