GBP2005 – GBP210 1 of 3 © 2002 Won-Top Electronics
GBP2005 – GBP210
2.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop A
! High Current Capability H
! High Reliability
! High Surge Current Capability B
! Ideal for Printed Circuit Boards + ~ ~ -
G D
K E
Mechanical Data P P P
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 C
! Polarity: As Marked on Body
! Weight: 2.0 grams (approx.)
! Mounting Position: Any
! Marking: Type Number J
L
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capaciti ve load, derate c urrent by 20%.
Characteristic Symbol GBP
2005 GBP
201 GBP
202 GBP
204 GBP
206 GBP
208 GBP
210 Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Vol t age
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @TA = 50°C IO2.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 50 A
Forward Voltage (per bridge) @IF = 2.0A VFM 1.1 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C IR10
1.0 µA
mA
Operating Temperature Range Tj-55 to +125 °C
Storage Temperature Range TSTG -55 to +150 °C
WTE
POWER SEMICONDUCTORS
GBP
Dim Min Max
A14.25 14.75
B10.2 10.6
C3.8 4.7
D14.25 14.73
E2.29 —
G1.17 1.42
H2.8 x 45°
J1.14 1.52
K0.76 0.86
L0.3 0.64
P3.56 4.06
All Dimensions in mm
0.1
1.0
10
100
0.2
0.0 0.6 1.0 1.8
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2TypicalFwdCharacteristics, per element
F
T = 25 C
j°
Pulse width = 300 sµ
1.4
10
20
30
40
50
110 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
T=25C
j°
Single half-sine-wave
(JEDEC method)
0
0
2
4
6
25 50 75 100 125 150
I , AVERAGE RECTIFIED CURRENT (A)
O
T,TEMPERATURE(C)
Fig.1ForwardCurrentDeratingCurve
°
Resistive or
Inductive load
3
5
1
10
100
1
1 10 100
C , JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
f = 1.0MHz
T=25C
j°
GBP2005 – GBP210 2 of 3 © 2002 Won-Top Electronics
GBP2005 – GBP210 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity
GBP2005 SIL Bridge 1000 Units/Box
GBP201 SIL Bridge 1000 Units/Box
GBP202 SIL Bridge 1000 Units/Box
GBP204 SIL Bridge 1000 Units/Box
GBP206 SIL Bridge 1000 Units/Box
GBP208 SIL Bridge 1000 Units/Box
GBP210 SIL Bridge 1000 Units/Box
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer . WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http:// www.wontop.com
