2N6491LEADFREE - Central Semiconductor Corp.

2N6486 2N6487 2N6488 NPN

2N6489 2N6490 2N6491 PNP

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6486, 2N6489

series types are complementary silicon power

transistors designed for general purpose switching and

amplifier applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted) 2N6486 2N6487 2N6488

SYMBOL 2N6489 2N6490 2N6491 UNITS

Collector-Base Voltage VCBO 50 70 90 V

Collector-Emitter Voltage VCEO 40 60 80 V

Emitter-Base Voltage VEBO 5.0 V

Continuous Collector Current IC 15 A

Continuous Base Current IB 5.0 A

Power Dissipation PD 75 W

Power Dissipation (TA=25°C) PD 1.8 W

Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C

Thermal Resistance ΘJC 1.67 °C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C) 2N6486 2N6487 2N6488

2N6489 2N6490 2N6491

SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS

ICEV V

CE=45V, VEB=1.5V - 500 - - - - μA

ICEV V

CE=65V, VEB=1.5V - - - 500 - - μA

ICEV V

CE=85V, VEB=1.5V - - - - - 500 μA

ICEO V

CE=½ Rated VCEO - 1.0 - 1.0 - 1.0 mA

IEBO V

EB=5.0V - 1.0 - 1.0 - 1.0 mA

BVCEV VBE=1.5V, IC=200mA 50 - 70 - 90 - V

BVCEO IC=200mA 40 - 60 - 80 - V

VCE(SAT) IC=5.0A, IB=0.5A - 1.3 - 1.3 - 1.3 V

VCE(SAT) IC=15A, IB=5.0A - 3.5 - 3.5 - 3.5 V

VBE(ON) VCE=4.0V, IC=5.0A - 1.3 - 1.3 - 1.3 V

VBE(ON) VCE=4.0V, IC=15A - 3.5 - 3.5 - 3.5 V

hFE VCE=4.0V, IC=5.0A 20 150 20 150 20 150

hFE VCE=4.0V, IC=15A 5.0 - 5.0 - 5.0 -

hfe VCE=4.0V, IC=1.0A, f=1.0kHz 25 - 25 - 25 -

fT VCE=4.0V, IC=1.0A, f=1.0MHz 5.0 - 5.0 - 5.0 - MHz

TO-220 CASE

R1 (11-September 2012)