© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C55V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ55 V
VGS Continuous ±20 V
VGSM Tranisent ±30 V
ID25 TC= 25°C 110 A
IDRMS External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 250 A
IAR TC= 25°C 110 A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 390 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-220 4 g
TO-263 3 g
G = Gate D = Drain
S = Source TAB = Drain
DS99182E(10/05)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA55V
VGS(th) VDS = VGS, ID = 250µA 3.0 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 11 13.5 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
TO-3P (IXTQ)
TO-263 (IXTA)
TO-220 (IXTP)
G
DS(TAB)
D(TAB)
G
S
GS
(TAB)
IXTA 110N055P
IXTP 110N055P
IXTQ 110N055P
VDSS = 55 V
ID25 = 110 A
RDS(on) ≤≤
≤≤
≤ 13.5 mΩΩ
ΩΩ
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 23 36 S
Ciss 2210 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1400 pF
Crss 550 pF
td(on) 27 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 53 ns
td(off) RG = 10 Ω (External) 66 ns
tf45 ns
Qg(on) 76 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 17 nC
Qgd 33 nC
RthJC 0.38 °C/W
RthCS (TO-3P) 0.21 °C/W
(TO-220) 0.25 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 110 A
ISM Repetitive 250 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A, -di/dt = 100 A/µs80ns
QRM VR = 25 V, VGS = 0 V 1.4 µC
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
TO-263 (IXTA) Outline
© 2006 IXYS All rights reserved
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
220
012345678910
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
9V
5V
Fig. 3. Output Characte ristics
@ 150ºC
0
10
20
30
40
50
60
70
80
90
100
110
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characte ristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
5V
6V
8V
Fig. 4. R
DS(on)
Norm alized to 0.5 I
D25
Value vs . Junction Tem pe rature
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalized
I
D
= 110A
I
D
= 55A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs . Drain Curre nt
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
R
D S ( o n )
- Normalized
T
J
= 25ºC
V
GS
= 10V
V
GS
= 15V - - - - -
T
J
= 175ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 10 20304050 607080
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 22.5V
I
D
= 55A
I
G
= 10m A
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
23456 7891011
V
G S
- Volts
I
D
- Amperes
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0 50 100 150 200 250 300
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Curre nt vs .
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. For w ar d-Bias
Safe Operating Area
1
10
100
1000
110100
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 13. Maxim um Transient Therm al Resistance
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
