PolarHTTM Power MOSFET IXTA 110N055P IXTP 110N055P IXTQ 110N055P = 55 V = 110 A 13.5 m VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M VGS G 55 55 V V Continuous 20 V VGSM Tranisent 30 V ID25 IDRMS IDM TC = 25 C External lead current limit TC = 25 C, pulse width limited by TJM 110 75 250 A A A IAR TC = 25 C 110 A EAR TC = 25 C 30 mJ EAS TC = 25 C 1.0 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 10 10 V/ns PD TC = 25 C 390 W -55 ... +175 175 -55 ... +150 C C C 300 260 C C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-220 TO-263 (TO-3P / TO-220) (TAB) TO-220 (IXTP) G g g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 55 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2006 IXYS All rights reserved (TAB) TO-3P (IXTQ) G D S G = Gate S = Source (TAB) D = Drain TAB = Drain Features l l IDSS D S 1.13/10 Nm/lb.in. 5.5 4 3 Symbol Test Conditions (TJ = 25 C, unless otherwise specified) S l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V TJ = 125 C 11 5.5 V 100 nA 25 250 A A 13.5 m Advantages l l l Easy to mount Space savings High power density DS99182E(10/05) IXTA 110N055P IXTP 110N055P IXTQ 110N055P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 23 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 36 S 2210 pF 1400 pF 550 pF Crss td(on) 27 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 53 ns td(off) RG = 10 (External) 66 ns tf 45 ns Qg(on) 76 nC 17 nC 33 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.38 C/W RthJC RthCS TO-3P (IXTQ) Outline (TO-3P) (TO-220) C/W C/W 0.21 0.25 Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 110 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/s VR = 25 V, VGS = 0 V 80 1.4 TO-220 (IXTP) Outline ns C TO-263 (IXTA) Outline Pins: 1 - Gate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain IXTA 110N055P IXTP 110N055P IXTQ 110N055P Fig. 1. Output Characte ris tics @ 25C Fig. 2. Exte nde d Output Characte r is tics @ 25C 220 110 V GS = 10V 9V 100 90 200 9V 160 80 8V 70 I D - Amperes I D - Amperes V GS = 10V 180 60 7V 50 40 30 140 120 80 20 40 10 20 5V 0 0.2 0.4 0.6 0.8 1 1.2 7V 60 6V 0 8V 100 6V 5V 0 1.4 1.6 0 1 2 3 V D S - V olts Fig. 3. Output Characte ris tics @ 150C 6 7 8 9 10 2.2 V GS = 10V 9V 100 V GS = 10V 2 R D S ( o n ) - Normalized 90 80 I D - Amperes 5 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 110 8V 70 60 7V 50 40 6V 30 20 1.8 1.6 I D = 110A 1.4 I D = 55A 1.2 1 5V 10 0 0.8 0 0.4 0.8 1.2 1.6 V D S - V olts 2 2.4 -50 2.8 -25 Fig. 5. RDS(on) Norm alize d to 0.5 ID25 V alue vs . Dr ain Curr e nt 0 25 50 75 100 125 TJ - Degrees Centigrade 150 175 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 90 2.8 2.6 V GS = 10V 2.4 V GS = 15V - - - - - 70 2.2 2 1.8 TJ = 175 C 1.6 External Lead C urrent Lim it 80 I D - Amperes R D S ( o n ) - Normalized 4 V D S - V olts 1.4 1.2 60 50 40 30 20 1 TJ = 25 C 0.8 10 0 0.6 0 25 50 75 100 125 150 175 200 225 250 I D - A mperes (c) 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTA 110N055P IXTP 110N055P IXTQ 110N055P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 50 250 TJ = -40 C 225 25 C 200 40 150 C 100 75 150 C 25 fs 125 25 C 30 20 g 150 TJ = -40 C 35 - Siemens 175 I D - Amperes 45 15 50 10 25 5 0 0 2 3 4 5 6 7 8 9 10 0 11 50 100 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 250 300 10 V DS = 22.5V 9 250 I D = 55A 8 I G = 10m A 7 200 V G S - Volts I S - Amperes 200 Fig. 10. Gate Char ge 300 150 100 6 5 4 3 TJ = 150 C 50 2 TJ = 25 C 1 0 0 0.4 0.6 0.8 1 1.2 1.4 V S D - V olts 1.6 1.8 0 2 10 20 30 40 50 Q G - nanoCoulombs 60 70 80 Fig. 12. For w ard-Bias Safe Ope rating Are a Fig. 11. Capacitance 10000 1000 R DS (on) Lim it C is s 1000 I D - Amperes Capacitance - picoFarads 150 I D - A mperes C os s 25s 100s 100 1m s 10m s 10 DC C rs s TJ = 175 C TC = 25 C f = 1MH z 100 1 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - V olts 100 IXTA 110N055P IXTP 110N055P IXTQ 110N055P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - C / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds (c) 2006 IXYS All rights reserved 100 1000