Oct. 2011
MITSUBISHI IGBT MODULES
CM75MX-24A
HIGH POWER SWITCHING USE
CM75MX-24A
¡IC ..................................................................... 75A
¡VCES ......................................................... 1200V
¡CIB (3-phase Converter +
3-phase Inverter + Brake)
¡Flatbase Type / Insulated Package /
Copper base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
53
54
55
56
57
58
59
60
61
12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
30
29
28
27
26
25
24
23
99
121.7
＊118.1
110
±0.5
94.5
＊58.4
0
A
0.8
39
50
±0.5
57.5
62
＊4.2
＊15.48
＊11.66
＊4.06
＊13.09
＊16.9
＊15
＊18.8
＊30.24
＊34.04
＊45.48
＊49.28
＊60.72
＊64.52
＊75.96
＊79.76
＊91.2
＊95
0
(7.75)
＊28.33
＊32.14
＊66.43
＊70.24
＊81.67
＊85.48
＊89.29
＊93.1
＊96.91
＊15.48
＊19.28
＊30.72
＊34.52
＊47.38
＊51.19
＊26.9
＊23.1
＊38.34
＊34.52
0
0
3.75
4-φ5.5 MOUNTING HOLES
20.5
17
13
7
(3)
0.8
3.5
LABEL
TERMINAL t = 0.8
SECTION A
(7.4)
1.2
1.5
12.5
φ2.5
φ4.3
φ2.1
(3.81)
1.15
0.65
R(1~2) S(5~6) T(9~10) B(24~25)
GB(35)
N(57~58) N1(60~61)
P(52~53) P1(54~55)
GuN(34)
GuP(49)
EuP(48)
GvN(33)
GvP(44)
EvP(43)
U(13~14)
GwN(32)
GwP(39)
EwP(38)
V(17~18) W(21~22)
TH2(28)
TH1(29)
Es(31)
NTC
* Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection.
＊Pin positions
with tolerance
φ0.5
CIRCUIT DIAGRAM
Toleranceotherwisespecified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Oct. 2011
2
MITSUBISHI IGBT MODULES
CM75MX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
V
CES
V
GES
I
C
I
CRM
P
tot
I
E (Note.3)
I
ERM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
G-E Short
C-E Short
DC, T
C
= 93°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
1200
±20
75
150
500
75
150
V
A
W
A
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
BRAKE PART
Rating Unit
V
CES
V
GES
I
C
I
CRM
P
tot
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, T
C
= 97°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
1200
±20
50
100
355
1200
50
100
V
A
W
V
A
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
Symbol Parameter Conditions
CONVERTER PART
Rating Unit
V
RRM
E
a
I
O
I
FSM
I
2
t
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge forward current
C
urrent square time
3-phase full wave rectifying, T
C
= 125°C
The sine half wave 1 cycle peak value, f = 60Hz,
non-repetitive
Value for one cycle of surge current
1600
440
75
750
2340
V
V
A
A
2S
(Note. 1)
Symbol Parameter Conditions
MODULE
Rating Unit
T
j
T
stg
V
isol
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
Mounting torque
Weight
Terminals to base plate, f = 60Hz, AC 1 min, RMS
On the centerline X, Y
Mounting M5 screw
(Typical)
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
270
°C
V
μm
N·m
g
Note. 8: The base plate flatness measurement points are in the following figure.
—
—
—
(Note. 8)
Symbol Parameter Conditions
+
–
X
Y
–
+
Heatsinkside
Heatsinkside
+：convex
–：concave
Oct. 2011
3
MITSUBISHI IGBT MODULES
CM75MX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Limits Unit
Min. Typ. Max.
I
CES
V
GE(th)
I
GES
V
CEsat
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
th(j-c)Q
R
th(j-c)D
r
g
R
G
Collector cut-off current
Gate-emitter threshold voltage
Gate-emitter leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
(Junction to case)
Internal gate resistance
External gate resistance
V
CE
= V
CES
, G-E Short
I
C
= 7.5mA, V
CE
= 10V
V
GE
= V
GES
, C-E Short
I
C
= 75A, V
GE
= 15V
I
C
= 75A, V
GE
= 15V
V
CE
= 10V,
G-E Short
V
CC
= 600V, I
C
= 75A, V
GE
= 15V
V
CC
= 600V, I
C
= 75A,
V
GE
= ±15V, R
G
= 4.3Ω,
Inductive load
(I
E
= 75A)
I
E
= 75A, G-E Short
I
E
= 75A, G-E Short
per IGBT
per free wheeling diode
T
C
= 25°C, per switch
—
7
—
2.0
2.2
1.9
—
—
—
380
—
—
—
—
—
3.5
2.6
2.16
2.5
—
—
0
—
1
8
0.5
2.6
—
—
11.5
1.0
0.23
—
100
50
300
600
200
—
3.4
—
—
0.25
0.40
—
41
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.1
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
(Note. 1)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
Symbol Parameter Conditions
BRAKE PART
Limits Unit
Min. Typ. Max.
ICES
VGE(th)
IGES
VCEsat
Cies
Coes
Cres
QG
I
RRM(Note.3)
VF(Note.3)
Rth(j-c)Q
Rth(j-c)D
rg
RG
Collector cut-off current
Gate-emitter threshold voltage
Gate-emitter leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Repetitive peak reverse current
Forward voltage
Thermal resistance
(Junction to case)
Internal gate resistance
External gate resistance
VCE = VCES, G-E Short
IC = 5mA, VCE = 10V
VGE = VGES, C-E Short
IC = 50A, VGE = 15V
IC = 50A, VGE = 15V
VCE = 10V,
G-E Short
VCC = 600V, IC = 50A, VGE = 15V
VR = VRRM
IF = 50A
IF = 50A
per IGBT
per Clamp diode
TC = 25°C
—
7
—
2.0
2.2
1.9
—
—
—
250
—
2.6
2.16
2.5
—
—
0
—
1
8
0.5
2.6
—
—
8.5
0.75
0.17
—
1
3.4
—
—
0.35
0.63
—
62
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
(Note. 1)
(Note. 6)
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
Symbol Parameter Conditions
I
RRM
V
F
R
th(j-c)
Repetitive peak reverse current
Forward voltage
Thermal resistance
(Junction to case)
V
R
= V
RRM
, T
j
= 150°C
I
F
= 75A
per Diode
—
1.2
—
20
1.6
0.24
—
—
—
mA
V
K/W
(Note. 1)
Limits Unit
Min. Typ. Max.
Symbol Parameter Conditions
CONVERTER PART
Oct. 2011
4
MITSUBISHI IGBT MODULES
CM75MX-24A
HIGH POWER SWITCHING USE
Note.1: Case temperature (TC), heat sink temperature (Ts) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCEsat and VEC)
7:
NTC THERMISTOR PART
Limits Unit
Min. Typ. Max.
R25
ΔR/R
B
(25/50)
P
25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
5.00
—
3375
—
5.15
+7.8
—
10
4.85
–7.3
—
—
kΩ
%
K
mW
(Note. 7)
Symbol Parameter Conditions
Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)
MODULE
R
th(c-s)
Contact thermal resistance
(Case to heat sink)
Thermal grease applied
per 1 module 0.015 —
—K/W
(Note. 2)
(Note. 1)
Limits Unit
Min. Typ. Max.
Symbol Parameter Conditions
C
RR
N
C
SR
N
C
TR
N
T
Ur
P
D
Ui
P
D
Bi
r
D
W
i
P
D
Vi
P
T
Ur
N
D
Ui
N
D
W
i
N
D
Vi
N
T
VrTh
P
T
Br
r
T
W
r
P
T
W
r
N
T
Vr
N
C
RR
PC
SR
PC
TR
P
53
54
55
56
57
58
59
60
61
12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
30
29
28
27
26
25
24
23
(121.7)
(110)
(50)
(62)
0
0
LABEL SIDE
26.0
25.5
26.5
29.5
42.9
0
36.4
46.8
60.8
68.3
74.1
85.6
91.8
0
18.7
25.1 (Tr/UP, Tr/VP, Tr/WP)
35.2 (Di/UP, Di/VP, Di/WP)
44.9 (Di/UN, Di/VN)
35.8 (Tr/UN, Tr/VN)
43.4 (Di/WN)
26.7 (Di/Br)
33.3 (Tr/WN)
25.6 (Th)
98.5
102.9
104.9
23.1
33.5
43.9
59.6
70.4
76.9
82.1
86.7
94.2
101.7
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor
R
25
: resistance at absolute temperature T
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
B
(25/50)
= In( )/( )
R
25
R
50
1
T
25
1
T
50
Oct. 2011
5
MITSUBISHI IGBT MODULES
CM75MX-24A
HIGH POWER SWITCHING USE
t
rr,
Q
rr
test waveform
t
IE
trr
Irr 1/2 ✕ Irr
Qrr = 1/2 ✕ Irr ✕ trr
0A
Switching time test circuit and waveforms
VCC+
IC
VCE
IE
Arm
RG
–VGE
+VGE
–VGE
Load
0V VGE
VGE
IC
td(on) td(off)
trtf
90%
10%
0V
0A
90%
0%
P side Inverter part T
r
(example of U arm)
G-E short
(GvP-EvP, GwP-EwP
, GvN-Es, GwN-Es, GB-Es)
N side Inverter part T
r
(example of U arm)
G-E short
(GvP-EvP, GwP-EwP
, GvN-Es, GwN-Es, GB-Es)
B
r
T
r
G-E short
(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-Es, GvN-Es, GwN-Es)
P side Inverter part D
i
(example of U arm)
G-E short
(GvP-EvP, GwP-EwP
, GvN-Es, GwN-Es, GB-Es)
N side Inverter part D
i
(example of U arm)
G-E short
(GvP-EvP, GwP-EwP
, GvN-Es, GwN-Es, GB-Es)
B
r
D
i
G-E short
(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-Es, GvN-Es, GwN-Es)
IC
VGE = 15V
P1
U
N1
VGE = 0V
GuP
EuP
GuN
Es
V
IC
VGE = 15V
P1
U
N1
VGE = 0V
GuP
EuP
GuN
Es
VIC
VGE = 15V
P1
B
N1
GB
Es
V
IE
VGE = 0V
P1
U
N1
VGE = 0V
GuP
EuP
GuN
Es
V
IE
VGE = 0V
P1
U
N1
VGE = 0V
GuP
EuP
GuN
Es
V
IF
VGE = 0V
P1
B
N1
GB
Es
V
V
CEsat
test circuit
V
EC
/V
F
test circuit
Oct. 2011
6
PERFORMANCE CURVES
150
0
25
50
75
100
125
100 246813579
T
j
= 25°C
V
GE
=
20V 15
12
13
11
10
9
4
3.5
2
1.5
3
2.5
1
0.5
0025 50 75 100 125 150
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
10
0
2
4
6
8
206 8 10 12 14 16 18
T
j
= 25°C
I
C
= 150A
I
C
= 75A
I
C
= 30A
040.5 1 1.5 2 2.5 3 3.5
T
j
= 25°C
T
j
= 125°C
10
–1
210
0
357 2 10
1
357 210
2
357
10
–2
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
C
ies
G-E short
C
oes
C
res
10
0
10
1
23 57 10
2
23 57
10
1
10
0
10
2
5
7
10
3
2
3
5
7
2
3
5
7
2
3
10
1
10
0
10
2
5
7
10
3
2
3
5
7
2
3
5
7
2
3
td(off)
td(on)
tf
tr
Conditions:
VCC = 600V
VGE = ±15V
RG = 4.3Ω
Tj = 125°C
Inductive load
OUTPUT CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
CAPACITANCE (nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
EMITTER CURRENT I
E
(A)
SWITCHING TIME (ns)
MITSUBISHI IGBT MODULES
CM75MX-24A
HIGH POWER SWITCHING USE
Oct. 2011
7
10
0
10
0
10
1
57 10
2
23 5723
10
0
10
1
57 10
2
23 5723
Eoff
10
0
10
1
10
0
10
2
5
7
10
3
2
3
5
7
2
3
5
7
2
3
Conditions:
VCC = 600V
VGE = ±15V
RG = 4.3Ω
Tj = 25°C
Inductive load
10
0
10
1
57 10
2
23 5723
Irr
trr
10
1
10
0
10
2
5
7
10
3
2
3
5
7
2
3
5
7
2
3
Conditions:
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive load
10
1
10
0
10
–1
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 4.3Ω
T
j
= 125°C
Inductive load
2
3
5
7
2
3
5
7
10
0
10
1
57 10
2
23 5723
Eoff
Eon
Err
td(off)
td(on)
tr
tf
0 100 200 300 500400
0
5
10
15
20
VCC = 400V
VCC = 600V
IC = 75A
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–5
23 57
10
–4
23 57
10
–3
23 57
10
–2
23 57
10
–1
23 57
10
0
23 57
10
1
Single pulse,
T
C
= 25°C
Inverter IGBT part : Per unit base = Rth(j–c) = 0.25K/W
Inverter FWDi part : Per unit base = Rth(j–c) = 0.40K/W
Converter-Di part : Per unit base = Rth(j–c) = 0.24K/W
Brake IGBT part : Per unit base = Rth(j–c) = 0.35K/W
Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.63K/W
10
2
10
1
10
0
2
3
5
7
2
3
5
7Conditions:
VCC = 600V
VGE = ±15V
IC, IE = 75A
Tj = 125°C
Inductive load
Eon
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING TIME (ns)
GATE RESISTANCE R
G
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING LOSS (mJ/pulse) l
rr
(A), t
rr
(ns)
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
EMITTER CURRENT I
E
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j–c)
TIME (s)
E
rr
MITSUBISHI IGBT MODULES
CM75MX-24A
HIGH POWER SWITCHING USE
Oct. 2011
8
100
101
2
3
5
102
7
2
3
5
7
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T
j
= 25°C
T
j
= 125°C
0 0.5 1.0 1.5 2.0
T
j
= 25°C
T
j
= 125°C
0
0.5
1
1.5
2
2.5
3
3.5
4
010
20 30 40 50 60 70 80 90 100
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
FORWARD CURRENT lF (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Brake part
COLLECTOR CURRENT IC (A)
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Brake part
FORWARD CURRENT I
F
(A)
FORWARD VOLTAGE VF (V)
101
100
102
5
7
103
2
3
5
7
2
3
5
7
2
3
RECTIFIER DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Converter part
FORWARD VOLTAGE VF (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
MITSUBISHI IGBT MODULES
CM75MX-24A
HIGH POWER SWITCHING USE
