Semiconductor Group 1 12/05/1997
BSS 110
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
GS(th) = -0.8...-2.0 V
Pin 1 Pin 2 Pin 3
S G D
Type
V
DS
I
D
R
DS(on) Package Marking
BSS 110 -50 V -0.17 A 10 ΩTO-92 SS 110
Type Ordering Code Tape and Reel Information
BSS 110 Q62702-S500 E6288
BSS 110 Q62702-S278 E6296
BSS 110 Q67000-S568 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
V
DS -50 V
Drain-gate voltage
R
GS = 20 kΩ
V
DGR -50
Gate source voltage
V
GS ± 20
Continuous drain current
T
A = 35 °C
I
D -0.17 A
DC drain current, pulsed
T
A = 25 °C
I
Dpuls -0.68
Power dissipation
T
A = 25 °C
P
tot 0.63 W
Semiconductor Group 2 12/05/1997
BSS 110
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air 1)
R
thJA ≤ 200 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = -0.25 mA,
T
j = 25 °C
V
(BR)DSS -50 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = -1 mA
V
GS(th) -0.8 -1.5 -2
Zero gate voltage drain current
V
DS = -50 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -50 V,
V
GS = 0 V,
T
j = 125 °C
V
DS = -25 V,
V
GS = 0 V,
T
j = 25 °C
I
DSS
-
-
-
-
-2
-0.1
-0.1
-60
-1 µA
Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V
I
GSS - -1 -10 nA
Drain-Source on-state resistance
V
GS = -10 V,
I
D = -0.17 A
R
DS(on) - 5.3 10 Ω
Semiconductor Group 3 12/05/1997
BSS 110
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥ 2 *
I
D *
R
DS(on)max,
I
D = -0.17 A
g
fs 0.05 0.09 - S
Input capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
iss - 30 40 pF
Output capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
oss - 17 25
Reverse transfer capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
rss - 8 12
Turn-on delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.27 A
R
G = 50 Ω
t
d(on)
- 7 10
ns
Rise time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.27 A
R
G = 50 Ω
t
r
- 12 18
Turn-off delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.27 A
R
G = 50 Ω
t
d(off)
- 10 13
Fall time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.27 A
R
G = 50 Ω
t
f
- 20 27
Semiconductor Group 4 12/05/1997
BSS 110
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - -0.17 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - -0.68
Inverse diode forward voltage
V
GS = 0 V,
I
F = -0.34 A
V
SD - -0.95 -1.2 V
Semiconductor Group 5 12/05/1997
BSS 110
Power dissipation
P
tot = ƒ(
T
A)
0 20 40 60 80 100 120 °C 160
T
A
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
W
0.70
P
tot
Drain current
I
D = ƒ(
T
A)
parameter:
V
GS ≥ -10 V
020 40 60 80 100 120 °C 160
T
A
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
-0.14
A
-0.18
I
D
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0.01,
T
C=25°C Drain-source breakdown voltage
V
(BR)DSS = ƒ(
T
j)
-60 -20 20 60 100 °C 160
T
j
-45
-46
-47
-48
-49
-50
-51
-52
-53
-54
-55
-56
-57
-58
V
-60
V
(BR)DSS
Semiconductor Group 6 12/05/1997
BSS 110
Typ. output characteristics
I
D = ƒ(
V
DS)
parameter:
t
p = 80 µs
0.0 -1.0 -2.0 -3.0 -4.0 -5.0 V -6.5
V
DS
0.00
-0.04
-0.08
-0.12
-0.16
-0.20
-0.24
-0.28
-0.32
A
-0.38
I
D
V
GS [V]
a
a -2.0
b
b -2.5
c
c -3.0
d
d -3.5
e
e -4.0
f
f -4.5
gg -5.0
h
h -6.0
i
i -7.0
j
j -8.0
k
k -9.0
l
P
tot = 1W
l -10.0
Typ. drain-source on-resistance
R
DS (on) = ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 °C
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A -0.34
I
D
0
4
8
12
16
20
24
Ω
32
R
DS (on)
V
GS [V] =
a
-2.0
V
GS [V] =
a
-2.5
V
GS [V] =
a
a
-3.0
b
b
-3.5
c
c
-4.0
d
d
-4.5
e
e
-5.0
f
f
-6.0
g
g
-7.0
h
h
-8.0
i
i
-9.0
j
j
-10.0
Typ. transfer characteristics
I
D
= f
(
V
GS)
parameter:
t
p = 80 µs
V
DS≥ 2 x
I
D x
R
DS(on)max
0-1 -2 -3 -4 -5 -6 -7 -8 V -10
V
GS
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
A
-0.9
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS≥2 x
I
D x
R
DS(on)max
0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 A -0.8
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
S
0.16
g
fs
7 12/05/1997
Semiconductor Group
BSS 110
Drain-source on-resistance
R
DS (on) = ƒ(
T
j)
parameter:
I
D = -0.17 A,
V
GS = -10 V
-60 -20 20 60 100 °C 160
T
j
0
2
4
6
8
10
12
14
16
18
20
Ω
24
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) = ƒ(
T
j)
parameter:
V
GS =
V
DS,
I
D = -1 mA
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
V
-4.6
V
GS(th)
-60 -20 20 60 100 °C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
= 1 MHz
0-5 -10 -15 -20 -25 -30 V -40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F = ƒ(
V
SD)
parameter:
T
j
, t
p = 80 µs
-3
-10
-2
-10
-1
-10
0
-10
A
I
F
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
