Philips Semiconductors Product specification
Three quadrant triacs BTA208X series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in motor control circuits BTA208X- 600D -
or with other highly inductive loads. BTA208X- 600E 800E
These devices balance the BTA208X- 600F 800F
requirements of commutation VDRM Repetitive peak off-state 600 800 V
performance and gate sensitivity. The voltages
"sensitivegate"Eseriesand"logiclevel" IT(RMS) RMS on-state current 8 8 A
D series areintended for interfacingwith ITSM Non-repetitive peak on-state 65 65 A
low power drivers, including micro current
controllers.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
VDRM Repetitive peak off-state - 6001800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 8 A
Ths ≤ 73 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 72 A
I2tI
2t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
IGM Peak gate current - 2 A
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
T1T2
G
123
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
March 2002 1 Rev 2.000
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series D, E and F
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.5 K/W
without heatsink compound - - 6.5 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA208X- ...D ...E ...F
IGT Gate trigger current2VD = 12 V; IT = 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA
ILLatching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 15 25 30 mA
VTOn-state voltage IT = 10 A - 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 - V
Tj = 125 ˚C
IDOff-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.5 mA
2 Device does not trigger in the T2-, G+ quadrant.
March 2002 2 Rev 2.000
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series D, E and F
guaranteed commutation
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA208X- ...D ...E ...F
dVD/dt Critical rate of rise of VDM = 67% VDRM(max);206070-V/µs
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 2 5 14 - A/ms
commutating current IT(RMS) = 8 A;
dVcom/dt = 10V/µs; gate
open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 6 10 20 - A/ms
commutating current IT(RMS) = 8 A;
dVcom/dt = 0.1V/µs; gate
open circuit
March 2002 3 Rev 2.000
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 73˚C.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0246810
0
2
4
6
8
10
12 = 180
120
90
60
30
IT(RMS) / A
Ptot / W Ths(max) / C
125
116
107
98
89
80
71
1
-50 0 50 100 150
0
2
4
6
8
10 BT137X
73 C
Ths / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms
10
100
1000
T / s
ITSM / A
dI /dt limit
T
TITSM
time
I
Tj initial = 25 C max
T
0.01 0.1 1 10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
1 10 100 1000
0Number of cycles at 50Hz
ITSM / A
1
10
20
30
40
50
60
70
80
TITSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
March 2002 4 Rev 2.000
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
Fig.12. Miniumum, critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt = 20V/µs
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150
T2+ G+
T2+ G-
T2- G-
Tj/°C
IGT(Tj)
IGT(25°C)
0 0.5 1 1.5 2 2.5 3
0
5
10
15
20
25
VT / V
IT / A
Tj = 125 C
Tj = 25 C typ max
Vo = 1.264 V
Rs = 0.0378 Ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
0.01
0.1
1
10
tp / s
Zth j-hs (K/W)
tp
P
t
D
bidirectional
unidirectional
with heatsink compound
without heatsink compound
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
1
10
100
20 40 60 80 100 120 140
F TYPE
E TYPE
D TYPE
Tj/˚C
dIcom/dt (A/ms)
March 2002 5 Rev 2.000
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
123
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max. 19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
March 2002 6 Rev 2.000
Philips Semiconductors Product specification
Three quadrant triacs BTA208X series D, E and F
guaranteed commutation
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS3STATUS4
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
3 Please consult the most recently issued datasheet before initiating or completing a design.
4 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
March 2002 7 Rev 2.000
