Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GAL120DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V TC = 80 C IC,nom. 150 A TC = 25 C IC 300 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80C ICRM 300 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 1,2 kW VGES +/- 20V V IF 150 A IFRM 300 A I2t 4,8 kA2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, t p = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 150A, V GE = 15V, Tvj = 25C VCE sat typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V IC = 150A, V GE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 6mA, VCE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V...+15V QG - 1,6 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,V CE = 25V, VGE = 0V Cies - 11 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,V CE = 25V, VGE = 0V Cres - 0,7 - nF VCE = 1200V, VGE = 0V, Tvj = 25C ICES - 7 184 A - 700 - A - - 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C prepared by: Mark Munzer date of publication: 07.02.2000 approved by: M.Hierholzer revision: 2 1(8) http://store.iiic.cc/ IGES Seriendatenblatt_BSM150GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GAL120DLC Charakteristische Werte / Characteristic values min. typ. max. - 0,05 - s - 0,06 - s - 0,05 - s - 0,07 - s - 0,57 - s - 0,57 - s - 0,04 - s - 0,05 - s Eon - 17 - mWs Eoff - 18 - mWs ISC - 950 - A LsCE - 25 - nH RCC`+EE` - 0,6 - m min. typ. max. - 1,8 2,3 V - 1,7 2,2 V Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 150A, V CE = 600V VGE = 15V, R G = 5,6, Tvj = 25C td,on VGE = 15V, R G = 5,6, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 150A, V CE = 600V VGE = 15V, R G = 5,6, Tvj = 25C tr VGE = 15V, R G = 5,6, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 150A, V CE = 600V VGE = 15V, R G = 5,6, Tvj = 25C td,off VGE = 15V, R G = 5,6, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 150A, V CE = 600V VGE = 15V, R G = 5,6, Tvj = 25C tf VGE = 15V, R G = 5,6, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data IC = 150A, V CE = 600V, VGE = 15V RG = 5,6, Tvj = 125C, LS = 60nH IC = 150A, V CE = 600V, VGE = 15V RG = 5,6, Tvj = 125C, LS = 60nH tP 10sec, V GE 15V, R G = 5,6 TVj125C, VCC=900V, VCEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip TC=25C Charakteristische Werte / Characteristic values Inversdiode / Free-Wheel Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 150A, V GE = 0V, Tvj = 25C VF IF = 150A, V GE = 0V, Tvj = 125C IF = 150A, - di F/dt = 3100A/sec VR = 600V, VGE = -15V, T vj = 25C IRM VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge VR = 600V, VGE = -15V, T vj = 25C Qr VR = 600V, VGE = -15V, T vj = 25C Erec Chopperdiode / Chopper Diode Ruckstromspitze peak reverse recovery current IF = 200A, V GE = 0V, Tvj = 25C VF IF = 200A, V GE = 0V, Tvj = 125C VR = 600V, VGE = -15V, T vj = 25C IRM - 17 - As - 32 - As - 4 - mWs - 10 - mWs min. typ. max. - 1,8 2,3 V - 1,7 2,2 V - 240 - A - 300 - A IF = 200A, - di F/dt = 4000A/sec VR = 600V, VGE = -15V, T vj = 25C Qr VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy A A IF = 200A, - di F/dt = 4000A/sec VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge - IF = 150A, - di F/dt = 3100A/sec VR = 600V, VGE = -15V, T vj = 125C Durchlaspannung forward voltage 180 220 IF = 150A, - di F/dt = 3100A/sec VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy - - 23 - As - 42 - As - 6 - mWs - 14 - mWs IF = 200A, - di F/dt = 4000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C 2(8) http://store.iiic.cc/ Erec Seriendatenblatt_BSM150GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GAL120DLC Thermische Eigenschaften / Thermal properties min. typ. - - 0,1 K/W - - 0,25 K/W RthCK - 0,01 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 150 C RthJC Transistor / transistor, DC Innerer Warmewiderstand thermal resistance, junction to case Diode/Diode, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module = 1 W/m * K / grease = 1 W/m * K max. Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index 275 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque terminals M6 Gewicht weight M1 3 6 Nm M2 2,5 5 Nm G 420 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) http://store.iiic.cc/ Seriendatenblatt_BSM150GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GAL120DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) V GE = 15V 300 250 Tj = 25C Tj = 125C IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (VCE) T vj = 125C 300 250 VGE = 17V VGE = 15V VGE = 13V 200 VGE = 11V IC [A] VGE = 9V VGE = 7V 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) http://store.iiic.cc/ Seriendatenblatt_BSM150GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GAL120DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 300 250 Tj = 25C Tj = 125C IC [A] 200 150 100 50 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F = f (VF) 300 250 Tj = 25C Tj = 125C IF [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) http://store.iiic.cc/ Seriendatenblatt_BSM150GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GAL120DLC Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = R goff =5,6 , VCE = 600V, T j = 125C 50 45 Eoff Eon 40 Erec E [mJ] 35 30 25 20 15 10 5 0 0 50 100 150 200 250 300 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 150A , V CE = 600V , T j = 125C 80 Eoff 70 Eon Erec 60 E [mJ] 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 45 RG [] 6(8) http://store.iiic.cc/ Seriendatenblatt_BSM150GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GAL120DLC Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 1 ZthJC [K / W] 0,1 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 2 3 4 44,54 33,9 21,52 0,04 1,014 0,006 0,029 0,043 68,24 101,68 52,66 27,42 0,006 0,035 0,033 0,997 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 5,6 Ohm, T vj = 125C 350 300 IC [A] 250 IC,Modul 200 IC,Chip 150 100 50 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) http://store.iiic.cc/ Seriendatenblatt_BSM150GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GAL120DLC 8(8) http://store.iiic.cc/ Seriendatenblatt_BSM150GAL120DLC.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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