BSP321P SIPMOS(R) Small-Signal-Transistor Product Summary Features * P-Channel * Enhancement mode V DS -100 V R DS(on),max 900 m -0.98 ID A * Normal level * Avalanche rated PG-SOT-223 * Pb-free lead plating; RoHS compliant * Qualified according to AEC Q101 Type Package Tape and Reel Information Marking Lead free Packing BSP321P PG-SOT-223 L6327: 1000 pcs/reel BSP321P Yes Non dry Maximum ratings, at T j=25 C, unless otherwise specified Value Unit T C=25 C -0.98 A T C=70 C -0.79 -3.9 Parameter Symbol Conditions Continuous drain current ID Pulsed drain current I D,pulse T C=25 C Avalanche energy, single pulse E AS I D=-0.98 A, R GS=25 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T C=25 C JESD22-A114-HBM mJ 20 V 1.8 W -55 ... 150 C 1A (250V to 500V) 260 C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.04 57 page 1 2011-04-05 BSP321P Parameter Values Symbol Conditions Unit min. typ. max. minimal footprint, steady state - - 115 6 cm2 cooling area1), steady state - - 70 Thermal characteristics Thermal resistance, junction - ambient R thJA Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 A -100 - - Gate threshold voltage V GS(th) V DS=V GS,I D=-380 A -2.1 -3.0 -4 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V, T j=25 C - -0.1 -1 V DS=-100 V, V GS=0 V, T j=150 C - -10 -100 V A Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-0.98 A - 689 900 m Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-0.79 A 0.6 1.2 - S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 1.04 page 2 2011-04-05 BSP321P Parameter Values Symbol Conditions Unit min. typ. max. - 240 319 - 62 82 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 28 42 Turn-on delay time t d(on) - 5.9 8.8 Rise time tr - 4.4 6.6 Turn-off delay time t d(off) - 16.5 24.7 Fall time tf - 8.5 12.7 Gate to source charge Q gs - 1.1 1.4 Gate to drain charge Q gd - 4 6 Gate charge total Qg - 9 12 Gate plateau voltage V plateau - 4.5 - V - - -0.98 A - - -3.9 - 0.84 1.2 V - 47 - ns - 96 - nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-50 V, V GS=10 V, I D=-0.98 A, R G=6 pF ns Gate Charge Characteristics 2) V DD=-80 V, I D=0.98 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge 2) Rev 1.04 Q rr T C=25 C V GS=0 V, I F=0.98 A, T j=25 C V R=50 V, I F=|I S|, di F/dt =100 A/s See figure 16 for gate charge parameter definition page 3 2011-04-05 BSP321P 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); |V GS|10 V 2 1 0.8 1.5 -I D [A] P tot [W] 0.6 1 0.4 0.5 0.2 0 0 0 40 80 120 160 0 40 80 120 160 T A [C] T A [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 101 102 limited by on-state resistance 100 s 0.5 0.2 1 ms 100 101 Z thJS [K/W] -I D [A] 0.1 10 ms 100 ms 10-1 0.05 0.02 100 0.01 DC single pulse 10-2 10-1 10 0 10 1 10 2 10 3 -V DS [V] Rev 1.04 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2011-04-05 BSP321P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 4 2 -4 V -10 V -6 V -4.5 V -7 V -5 V 1.6 2 R DS(on) [] -I D [A] 3 -5 V 1.2 -6 V -7 V -4.5 V 1 0.8 -8 V -10 V -4 V 0 0.4 0 2 4 6 8 10 0 1 -V DS [V] 2 3 4 3 4 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 4 3 125 C 3 2 g fs [S] -I D [A] 25 C 2 1 1 0 0 0 2 4 6 8 -V GS [V] Rev 1.04 0 1 2 -I D [A] page 5 2011-04-05 BSP321P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-0.98 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-380 A 5 2.5 2 min. 1.5 -V GS(th) [V] R DS(on) [] 4 98 % 1 typ. 3 max. 2 0.5 typ. 1 0 -60 -20 20 60 100 -60 140 -20 20 60 100 140 T j [C] T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 101 150 C, typ 100 I F [A] C [pF] Ciss 25 C, typ 102 150 C, 98% Coss 10-1 25 C, 98% Crss 101 10-2 0 20 40 60 80 100 0.5 1 1.5 -V SD [V] -V DS [V] Rev 1.04 0 page 6 2011-04-05 BSP321P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=-0.98 A pulsed parameter: T j(start) parameter: V DD 100 12 25 C 50 V 100 C 10 20 V 80 V 125 C -I AV [A] - VGS [V] 8 6 4 2 0 10-1 100 101 102 0 103 2 t AV [s] 4 6 8 10 - Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 A 120 V GS Qg 115 -V BR(DSS) [V] 110 105 V g s(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 Q g ate Q gd 140 T j [C] Rev 1.04 page 7 2011-04-05 BSP321P Package Outline: PG-SOT-223 Footprint: Packaging: Dimensions in mm Rev 1.04 page 8 2011-04-05 BSP321P Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.04 page 9 2011-04-05