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Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE340
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Vol tage 300 V
VCEO Collector-Emitter Volt age 300 V
VEBO Emitter- Base Voltage 5 V
IC Collector Current 500 mA
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Max. U nits
BVCEO Collector-Emitter Breakdown Volt age IC = 1mA, IB = 0 300 V
ICBO Collector Cut-of f Current VCB = 300V, IE =0 100 µA
IEBO Em itter Cut-off Current VBE = 3V, IC = 0 100 µA
hFE DC Current Gain VCE = 10V, IC = 50mA 30 240
MJE340
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
MJE340
Rev. A1, February 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000
1
10
100
1000
VCE = 2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2 IC = 10IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100
0.01
0.1
1
10
10µs
500
µ
s
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175
0
4
8
12
16
20
24
28
32
PC[W], POWER DISSIPATION
Tc[oC], CASE TEM PER ATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE340
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. G
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