Copyright © Harris Corporation 1995
5-3
SEMICONDUCTOR
Features
• 12A, 60V
•r
DS(ON) = 0.150Ω
• 2kV ESD Protected
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Description
The RFD3055LE, RFD3055LESM, and RFP3055LE are
N-channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
The RFD3055LE, RFD3055LESM, and RFP3055LE incor-
porate ESD protection and are designed to withstand 2kV
(Human Body Model) of ESD.
Formerly developmental type TA49158.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RFD3055LE TO-251AA F3055L
RFD3055LESM TO-252AA F3055L
RFP3055LE TO-220AB FP3055LE
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-252 variant in tape and reel, e.g.
RFD3055LESM9A.
December 1995
Absolute Maximum Ratings TC= +25oC
RFD3055LE, RFD3055LESM,
RFP3055LE UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS 60 V
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
12
Refer to Peak Current Curve A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Refer to UIS Curve
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
0.323 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-55 to +175 oC
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . ESD 2 kV
Packages
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
Symbol
GATE
DRAIN
SOURCE
DRAIN
(FLANGE)
DRAIN GATE
DRAIN
SOURCE
(FLANGE)
DRAIN
GATE
SOURCE
(FLANGE)
G
D
S
File Number 4044.1
LOGIC LEVEL POWER MOSFET DATA SHEETS
RFD3055LE, RFD3055LESM,
RFP3055LE
12A, 60V, ESD Rated, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs
5-4
Specifications RFD3055LE, RFD3055LESM, RFP3055LE
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 60 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA1-2V
Zero Gate Voltage Drain Current IDSS VDS = 60V,
VGS = 0V TC = +25oC--1µA
T
C
= +150oC--50µA
Gate-Source Leakage Current IGSS VGS = ±10V - - 10 µA
On Resistance rDS(ON) ID = 12A, VGS = 5V - - 0.150 Ω
Turn-On Time tON VDD = 30V,
ID = 12A,
RL = 2.5Ω,
VGS = 5V,
RGS = 5Ω
- - 120 ns
Turn-On Delay Time tD(ON) -10-ns
Rise Time tR-70-ns
Turn-Off Delay Time tD(OFF) -25-ns
Fall Time tF-30-ns
Turn-Off Time tOFF - - 85 ns
Total Gate Charge QG(TOT) VGS = 0V to 10V VDD = 48V,
ID = 12A,
RL = 4Ω
-2835nC
Gate Charge at 5V QG(5) VGS = 0V to 5V - 15 18 nC
Threshold Gate Charge QG(TH) VGS = 0V to 1V - 1.0 1.2 nC
Input Capacitance CISS VDS = 25V,
VGS = 0V,
f = 1MHz
- 850 - pF
Output Capacitance COSS - 170 - pF
Reverse Transfer Capacitance CRSS - 100 - pF
Thermal Resistance Junction-to-Case RθJC - - 3.1 oC/W
Thermal Resistance Junction-to-Ambient RθJA TO-251, TO-252, TO-220 - - 80 oC/W
Source-Drain Diode Ratings and Specifications
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage VSD ISD = 12A - - 1.5 V
Reverse Recovery Time tRR ISD = 12A, dISD/dt = 100A/µs - - 100 ns
5-5
RFD3055LE, RFD3055LESM, RFP3055LE
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
10 100
0.1
100
1
1
ID, DRAIN CURRENT (A)
TC = +25oC
DC
100µs
1ms
10ms
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
10
VDSS MAX = 60V
10
1
0.01
10-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
THERMAL RESPONSE
ZθJC, NORMALIZED
0.1
0.01
0.02
0.05
0.1
0.2
SINGLE PULSE
0.5
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
PDM
t1t2
6
2
025 50 75 100 125 150
10
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
14
175
8
4
12
t, PULSE WIDTH (s)
10
10-5 10-4 10-3 10-2 10-1 100101
TC = +25oC
50
IDM, PEAK CURRENT CAPABILITY (A)
100
I = I25 175 - TC
150
FOR TEMPERATURES
ABOVE +25oC DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
VGS = 5V
0
10
0 1.5 3.0 4.5 7.5
20
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
PULSE DURATION = 250µs, TC = +25oC
VGS = 4V
VGS = 10V
40
6.0
VGS = 3V
VGS = 4.5V
VGS = 5V
0 3.0 4.5 6.0 7.51.5
0
5
10
15 +175oC
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
ID(ON), ON-STATE DRAIN CURRENT (A)
VGS, GATE-TO-SOURCE VOLTAGE (V)
20 -55oC+25oC
25
5-6
RFD3055LE, RFD3055LESM, RFP3055LE
FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FIGURE 10. TYPICAL rDS(ON) FOR VARYING CONDITIONS OF
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 11. TYPICAL SWITCHING TIME AS A FUNCTION OF
GATE RESISTANCE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
ID = 250µA
2.0
1.5
1.0
0.5
0.0
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
BVDSS, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
200 -80 -40 0 40 80 120 160
0.0
0.5
1.0
1.5
2.0 VGS = VDS, ID = 250µA
VGS(TH), NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE (oC) 200
PULSE DURATION = 250µs, VGS = 5V, ID = 12A
0.0
0.5
1.0
1.5
-80 -40 0 40 80 120 160
rDS(ON), NORMALIZED ON RESISTANCE
TJ, JUNCTION TEMPERATURE (oC) 200
2.0
2.5
100
150
200
250
2.5 3.0 3.5 4.0
rDS(ON), ON-STATE RESISTANCE (mΩ)
VGS, GATE-TO-SOURCE VOLTAGE (V) 5.0
300
ID = 18A
VDD = 15V, PULSE DURATION = 250µs
4.5
ID = 12A
ID = 6AID = 3A
VDD = 30V, ID = 12A, RL = 2.5Ω
0
150
200
010203040
SWITCHING TIME (ns)
RGS, GATE-TO-SOURCE RESISTANCE (Ω)50
50
tR
tD(OFF)
tD(ON)
100 tF
60
45
30
15
0
20IG REF()
I
GACT()
--------------------- t, TIME (µs) 80IG REF()
I
G ACT()
---------------------
5.00
3.75
2.50
1.25
0
VDD = BVDSS VDD = BVDSS
VDS, DRAIN-SOURCE VOLTAGE (V)
RL = 5.0Ω
IG(REF) = 0.35mA
VGS = 5V
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VGS, GATE-SOURCE VOLTAGE (V)
5-7
RFD3055LE, RFD3055LESM, RFP3055LE
FIGURE 13. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 14. UNCLAMPED INDUCTIVE SWITCHING. REFER TO
HARRIS APPLICATION NOTES AN9321 AND
AN9322
FIGURE 15. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE
Typical Performance Curves
(Continued)
VGS = 0V, FREQUENCY (f) = 1MHz
1200
300
00 5 10 15 20 25
C, CAPACITANCE (pF)
900
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
COSS
CRSS
600
CISS
0.01 0.1
10
0.001
50
1
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = +25oC
STARTING TJ = +150oC
110
T
C
, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.0 0 25 50 75 100 175
0.2
0.4
0.6
0.8
1.0
1.2
125 150
5-8
RFD3055LE, RFD3055LESM, RFP3055LE
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
FIGURE 18. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
tP
VGS
0.01Ω
L
IL
-
+
VDS
VDD
RGDUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
VDD
VDS
VGS
0V
RGS
DUT
RLtON
tD(ON)
tR
90%
10%
VDS 90%
10%
tF
tD(OFF)
tOFF
90%
50%50%
10% PULSE WIDTH
VGS
5-9
Temperature Compensated PSPICE Model for the RFD3055LE, RFD3055LESM, RFP3055LE
.SUBCKT RFD3055LE 2 1 3 ; rev 1/30/95
CA 12 8 1.68e-9
CB 15 14 1.78e-9
CIN 6 8 0.769e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 64.28
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.6e-9
LSOURCE 3 7 4.6e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 0.176e-3
RLDRAIN 2 5 10
RGATE 9 20 9.84
RLGATE 1 9 46
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 76.56e-3
RLSOURCE 3 7 46
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.516
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/31.7,6))}
.MODEL DBDMOD D (IS = 3.61e-13 RS = 1.78e-2 TRS1 = 1.70e-2 TRS2 = -4.69e-6 CJO = 3.88e-10 TT = 3.6e-8)
.MODEL DBKMOD D (RS = 0.4731 TRS1 = -2.19e-3 TRS2 = 4.7e-5)
.MODEL DESD1MOD D (BV = 13.5 NBV = 17.5 IBV = 2.5e-4 RS = 22.2 TRS1 = 0 TRS2 = 0)
.MODEL DESD2MOD D (BV = 12.86 NBV = 22 IBV = 2.5e-4 RS = 0 TRS1 = 0 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 0.48e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.082 KP = 18.36 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.06e-3 TC2 = -6.22e-7)
.MODEL RDSMOD RES (TC1 = 4.48e-3 TC2 = 1.77e-5)
.MODEL RSCLMOD RES (TC1 = 3.55e-3 TC2 = 0.20e-5)
.MODEL RVTOMOD RES (TC1 = -1.85e-3 TC2 = -4.13e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.4 VOFF= -2.4)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -4.4)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.85 VOFF= 2.15)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.15 VOFF= -2.85)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; authored by William J. Hepp and C. Frank Wheatley.
RFD3055LE, RFD3055LESM, RFP3055LE
1
GATE
LGATE RGATE
EVTO
18
8
+
12 13
814
13
13
15
S1A
S1B
S2A
S2B
CA CB
EGS EDS
RIN CIN
MOS1
MOS2
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
RSOURCE
LSOURCE
SOURCE
RBREAK
RVTO
VBAT
IT
VTO
ESG
DPLCAP
6
10 5
16
21
11
8
14
5
8
6
8
73
17 18
19
2
++
+
+
+
+
20
RDRAIN
ESCL
RSCL1
RSCL2 51
50
+
9
RLGATE
RLDRAIN
RLSOURCE
DESD1
DESD2
91
17
18-
5
51
6
8
-
-
-
--
-
