PD-9.445C IRFP350 International Rectifier HEXFET. Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated D Isolated Central Mounting Hole Fast Switching Ease of Paralleling ; Simple Drive Requirements Voss = 400V Rosyon) = 0.309 5 Ip = 16A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC Absolute Maximum Ratings Parameter Max. Units Ip @ Tc = 25C Continuous Drain Current, Ves @ 10 V 16 Ip @ Te = 100C | Continuous Drain Current, Ves @ 10 V 10 A Ibm Pulsed Drain Current 64 _ Pp @ Tc = 25C __| Power Dissipation 190 Ww Linear Derating Factor 1.5 WC Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy 390 mJ far Avalanche Current 16 A Ear Repetitive Avalanche Energy 19 mJ dv/dt Peak Diode Recovery dv/dt 4.0 Vins Ty Operating Junction and -55 to +150 Tsta Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) | Thermal Resistance Parameter Min. Typ. Max. Units Rec Junction-to-Case = _ 0.65 Recs Case-to-Sink, Flat, Greased Surface 0.24 _ CIN Reva Junction-to-Ambient _ 40 995IRFP350 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions V(sr)pss Drain-to-Source Breakdown Voltage 400 _ _ VV | Ves=0V, lo= 250A AViarypss/ATy| Breakdown Voltage Temp. Coefficient [051 | | VPC | Reference to 25C, In= 1mA Ros(on) Static Drain-to-Source On-Resistance = | 0.30} Q |Ves=10V, ln=9.6A Vesn) Gate Threshold Voltage 2.0 _ 4.0 V_ | Vps=Veas, lp= 250uA Os Forward Transconductance 10 = _ S| Vps=50V, ln=9.6A @ loss Drain-to-Source Leakage Current | +25 LA Vos=400V, Vass0V 250 Vps=320V, Vas=0V, Ty=125C lass Gate-to-Source Forward Leakage _ 100 nA Ves=20V Gate-to-Source Reverse Leakage _ _ -100 Ves=-20V Qg Total Gate Charge _ 150 ID=16A Qgs Gate-to-Source Charge | | 23 | nC | Vps-320V Qga Gate-to-Drain ("Miller") Charge _ _ 80 Vas=10V See Fig. 6 and 13 @ taon) Turn-On Delay Time _ 16 _ Vpp=200V tr Rise Time _ 49 _ ns Ip=16A tavoth Turn-Off Delay Time _ 87 _ Re=6.20 t Fall Time = 47 _ Rp=12Q See Figure 10 Lp Internal Drain Inductance _ 5.0 _ ea goad ) =) nH | from package ffs Ls Internal Source Inductance |] 13), and center of die contact 8 Ciss Input Capacitance | 2600| Ves=0V Coss Output Capacitance | 660 | PF | Vpos= 25V Crss Reverse Transfer Capacitance | 250 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 16 MOSFET symbot o (Body Diode) A showing the Ism Pulsed Source Current _ _ 64 integral reverse a (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 1.6 Vo | Ty=25C, Is=16A, Vas=0V tre Reverse Recovery Time | 380 | 570 | ns | Ty=25C, IrF=16A Qn Reverse Recovery Charge | 47 | 7.1 | uC jdifdt=100A/us ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: Repetitive rating; pulse width limited by Isps16A, di/dts200A/us, VppsVBR)pss, max. junction temperature (See Figure 11) Tys150C Vpp=50V, starting Ty=25C, L=2.7mH Pulse width < 300 us; duty cycle <2%. Rg=25Q, las=16A (See Figure 12) 996Ip, Drain Current (Amps) Ip, Drain Current (Amps) 10! 20us PULSE WIDTH Te = 25C 40 400 to! Vps, Drain-to-Source Voitage (volts) Fig 1. Typical Output Characteristics, Tc=25C Vpg = 5OV 20us PULSE WIDTH 4 10 Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Roson) Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRFP350 20us PULSE WIDTH Te = 150C 109 to! Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tco=150C Ves = 10V 0.0 -60 -40 -20 0 20 40 60 80 Ty, Junction Temperature (C) 100 120 140 160 Fig 4. Normalized On-Resistance Vs. Temperature 997IREP350 | 6000 20 Cgs + Cgq. Cg SHORTED 5000 gd Cas + a 4000 Ms i Ciss 3000 2000 Capacitance (pF) 1000 Ves. Gate-to-Source Voltage (volts) SEE FIGURE 13 0 20 A0 60 80 100 120 140 Vos, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 OPERATION IN THIS AREA LIMITED g 5 BY Ros (ON) E = g : c Ke z 102 a = 5 c 10! c i 6 Goa a & 2 @ 40 & a 3 QAos fc L 8 = 2 IT J=150C Veg = OV t PULSE 1%. 0.8 1.2 1.5 2.0 ye Sag @SCSCtge OSC Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voitage 998Ip, Drain Current (Amps) | IRFP350 Vos Ar D.U.T. K at Voo YP tov Pulse Width = 1ps Duty Factor < 0.1% Lf Fig 10a. Switching Time Test Circuit vps S$ 90% [- | | | | | | | 10% 25 50 75 100 425 150 Ves | | \ Tc, Case Temperature (C) taon) te tao) 4 Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature oO 3S N > 0 a Cc 3 a no @ a SINGLE PULSE a . (THERMAL RESPONSE} 5 7] [ x Pow ke lot [rer eal NOTES: 4. DUTY FACTOR, D=t4/t2 _ 2. PEAK T5=Pom x Zthic + Ty. 10 10-5 104 103 10? 0.4 4 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 999IRFP350 Vary tp to obtain Vos > required tas i) TOP 7.24 10A > 300 BOTTOM 16A = _ 2 2 600 ut . . ve 2 Fig 12a. Unclamped Inductive Test Circuit $ Q 400 2 D S t n _ Pp oO 200 4 Lu Vps-_, / 25 50 75 4100 425 150 Starting Ty, Junction Temperature(C) lag Fig 12. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator pa eent Regulater _ I | ave L Lt Ves i Charge Current Sampling nesistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1511 Appendix C: Part Marking Information See page 1517 International Rectifier 1000