1
Base
2
Emitter
Collector
3
Diagram:
Dimensions in inches and (millimeter)
3
1 2
0.118(3.00)
0.110(2.80)
0.055(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.012(0.30)
0.020(0.50)
SS8050-G (NPN)
RoHS Device
General Purpose Transistor
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Maximum Ratings (at TA=25°C unless otherwise noted)
VCEO
Emitter-Base voltage
Collector-Emitter voltage
Collector-Base voltage
Collector current
Symbol
Parameter Value Unit
V
V
V
5
25
40
IC1.5 A
300 mW
PC
Collector power dissipation
°C/W
RθJA 417
VCBO
VEBO
°C
TJ
Junction temperature 150
°C
Tstg
Storage temperature -55~+150
Symbol
Parameter Conditions Min
Max
Unit
Electrical Characteristics (at TA=25°C unless otherwise noted)
Collector-Base breakdown voltage
0.1
IC =100μA , IE=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Collector-Emitter saturation voltage
Transition frequency
IC =0.1mA , IB=0
IE =100μA , IC=0
VCB=40V , IE=0
VE=20V , IE=0C
IC=800mA , IB=80mA
VCE=10V, IC=50mA, f=30MHz
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
VCE(sat)
fT
25
40
5
0.1
0.5
V
V
V
µA
µA
V
MHZ
Base-Emitter saturation voltage IC=800mA , IB=80mA VBE(sat) 1.2 V
Typ
DC current gain
VCE=1V , IC=100mA hFE(1) 350
200
VCE=1V , IC=800mA hFE(2) 40
100
Thermal resistance from
junction to ambient
1 : BASE
2 : EMITTER
3 : COLLECTOR
SOT-23
Emitter cut-off current VEB=5V , IC=0 IEBO 0.1 µA
-
-
-
-
-
-
-
-
-
-
-
-
-
- -
-
-
-
-
- -
RATING AND CHARACTERISTIC CURVES (SS8050-G)
General Purpose Transistor
Collector Current, Ic (mA)
DC Current Gain, hFE
Fig.2 - hFE — IC
Ta=100°C
1500
1
1 10
1000
100
10
100
1000
Ta= 25°C
Ta=100°C
Collector Current, Ic (mA)
0.2
1.0
1.2
0.8
110 100
0.6
Base-Emitter Saturation
Voltage, VBEsat (V)
Fig.4 - VBEsat — IC
0.4
15001000
Ta=100°C
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Fig.1 - Static Characteristic
Collector Current, IC (mA)
Collector-Emitter Voltage, VCE (V)
0
60
80
100
140
120
0.5 1.0 1.5 2.0 2.5
COMMON
EMITTER
Ta=25°C
0
500μA
IB=50μA
450μA
400μA
350μA
300μA
250μA
200μA
150μA
100μA
1 10 1500
10
1000
100
100 1000
Collector Current, Ic (mA)
Fig.3 - VCEsat — IC
Collector-Emitter Saturation
Voltage, VCEsat (mV)
Reverse Voltge, (V)
Fig.6 - Cob/Cib — VCB/VEB
100
200
10
1
10 20
1
0.1
f=1MHZ
IE=0/IC=0
Ta=25°C
Capacitance, C (pF)
Cib
Cob
40
20
COMMON EMITTER
VCE=1V
Ta=25°C
β = 10 β = 10
Ta= 25°C
1500
1000
100
10
1
0.4 0.80.6 1.2
0.2 1.0
Ta= 25°C
Fig.5 - VBE — IC
Collector Current, Ic (mA)
Base - Emitter Voltage, VBE (V)
Ta=100°C
COMMON EMITTER
VCE=1V
Fig.8 - PC — Ta
350
Collector Power Dissipation, Pc (mW)
300
250
200
100
0
0 25 50 75 100 125 150
Ambient Temperature, Ta (°C)
Fig.7 - FT — IC
Collector Current, IC (mA)
Transtion frequency, fT (MHZ)
RATING AND CHARACTERISTIC CURVES (SS8050-G)
General Purpose Transistor
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150
50
1 10 100
1000
100
10
1
Ta= 25°C
VCE=10V
Reel Taping Specification
2.142 ± 0.039
54.40 ± 1.003.15 ± 0.10
0.124 ± 0.004
2.77 ± 0.10
0.109 ± 0.004
1.22 ± 0.10
0.048 ± 0.004
d
F E
B
P1 P0
o
120
D1
D2
W1
P
D
A
W
T
C
4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10
(mm)
(inch) 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.10
0.138 ± 0.004
SOT-23
SYMBOL
B C dD D2D1
(mm)
(inch)
1.50 ± 0.10 13.00 ± 1.00
178.00 ± 2.00
0.059 ± 0.004 7.087 ± 0.079 0.512 ± 0.039
SOT-23
SYMBOL
A
12.30 ± 1.00
0.484 ± 0.039
8.00 + 0.30 /–0.10
0.315 + 0.012 /–0.004
General Purpose Transistor
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Company reserves the right to improve product design , functions and reliability without notice.
Marking Code
XX
3
1 2
xx = Product type marking code
Suggested PAD Layout
Part Number
SS8050-G
Marking Code
Y1
Standard Packaging
Case Type
SOT-23 3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
SIZE
(inch)
0.031
(mm)
0.80
0.60
1.90
0.024
0.075
SOT-23
2.02 0.080
A
B
C
D
1.General tolerance: ±0.05mm.
2.The pad layout is for reference purposes only.
Note:
A
D
C
B
General Purpose Transistor
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