PROFET(R) BTS307 Smart High-Side Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Features Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection Fast demagnetization of inductive loads Reverse battery protection1) Open drain diagnostic output Open load detection in OFF-state CMOS compatible input Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) RON IL(ISO) 65 V 5.8 ... 58 V 250 m 1.7 A PG-TO263-5-2 Green Product (RoHS compliant) AEC Qualified Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage source Overvoltage protection Current limit 3 Gate protection V Logic 2 Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Logic Load detection ST Short circuit detection PROFET GND 1 Signal GND ) 1 Load GND With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Data Sheet 1 2013-10-10 BTS307 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for short circuit protection2) Tj Start=-40 ...+150C Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Electrostatic discharge capability (ESD) IN, ST: (Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Symbol Vbb Vbb IL Tj Tstg Ptot VESD VIN IIN IST Values 65 40 Unit V V self-limited -40 ...+150 -55 ...+150 50 1.0 tbd (>1.0) -0.5 ... +36 2.0 5.0 A C W kV V mA see internal circuit diagrams page 5 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): 2) RthJA min --- Values typ max -2.5 -75 Unit K/W Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with higher Vbb. Data Sheet 2 2013-10-10 BTS307 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A, Vbb = 24 V Tj=25 C: RON Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=32 V, VIN= 0, see diagram page 6 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Vbb = 20V, Tj =-40...+150C Slew rate on, 10 to 30% VOUT, RL = 12 , Vbb = 20V, Tj =-40...+150C Slew rate off, 10 to 30% VOUT, RL = 12 , Vbb = 20V, Tj =-40...+150C Operating Parameters Operating voltage 3) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 10 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage protection4) Tj =-40...+150C: Ibb=40 mA Standby current (pin 3), VIN=0 Tj=-40...+150C: 5) Operating current (Pin 1) , VIN=5 V ) 3 4) ) 5 IL(ISO) IL(GNDhigh) -- 220 250 500 1.4 390 1.7 m -- -- -1.1 15 20 --- 80 70 s dV /dton -- -- 6 V/s -dV/dtoff -- -- 7 V/s Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) 5.8 2.7 --- ---5.6 58 4.7 4.9 7.5 V V V V -- 0.4 -- V 65 70 -- V ton toff Vbb(under) Vbb(AZ) A Ibb(off) IGND A mA --- 10 2.2 50 -- mA At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 6. Add IST, if IST > 0, add IIN, if VIN>5.5 V Data Sheet 3 2013-10-10 BTS307 Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Protection Functions6) Initial peak short circuit current limit (pin 3 to 5) Tj =-40C: Tj =25C: Tj =+150C: Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 7) Values min typ max Unit IL(SCp) --4.0 -10 -- 19 --- A 59 150 --- --10 -- 75 --32 V C K V -- 6 -- A 2.4 3 4 V V VON(SC) -- 2.5 -- RI -- 20 -- k VIN(T+) VIN(T-) VIN(T) IIN(off) 1 0.8 -1 --0.5 -- 2.5 --30 V V V A On state input current (pin 2), VIN = 3.5? V IIN(on) 10 25 70 A Delay time for status with open load td(ST OL3) -- 200 -- s Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(low) 5.4 -- 6.1 -- -0.4 V Diagnostic Characteristics Open load detection current IL(off) (included in standby current Ibb(off)) Open load detection voltage Short circuit detection voltage (pin 3 to 5) VON(CL) Tjt Tjt -Vbb Tj=-40..150C: VOUT(OL) Input and Status Feedback8) Input resistance see circuit page 5 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V after Input neg. slope (see diagram page 10) 6) ) 7 8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 6). If a ground resistor RGND is used, add the voltage drop across this resistor. Data Sheet 4 2013-10-10 BTS307 Truth Table Input- Output level level Normal operation Open load Status BTS307 L L L H H H 9 ) L H H H H L L L H L L L H H H H H L L L H L L L L L H L L no overvoltage shutdown, see normal operation Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 10) Terms Status output +5V Ibb 3 I IN 2 IL V IN VST OUT PROFET I ST V R ST(ON) Vbb IN 4 VON 5 GND ST ESDZD GND 1 bb R IGND ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 0 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). VOUT GND Short circuit detection Input circuit (ESD protection) R IN ST Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by the PROFET itself, external switch off recommended! I + V bb ESD-ZD I I V ON I GND OUT ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). ) 9 Logic unit Short circuit detection Power Transistor off, high impedance, internal pull up current source for open load detection. Data Sheet 5 2013-10-10 BTS307 Inductive and overvoltage output clamp GND disconnect + V bb V Z 3 +5V VON IN 2 12k PROFET OUT V bb OUT 5 ST 4 P R OFE T GND Vbb GND 1 V IN VST V GND VON clamped to -- V typ. For Vbb=24V and VIN=0V: VST>2.8V @ IST if pulled up as shown. Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Overvolt. and reverse batt. protection GND disconnect with GND pull up + V bb V R IN IN RI 3 Z2 2 Logic R ST IN Vbb PROFET ST V Z1 4 P R O FE T OUT 5 ST GND 1 GND R GND V Signal GND V bb V IN ST V GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 , RST= 15 k, RI= 20 k typ. Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection Vbb disconnect with energized inductive load OFF-state diagnostic condition: VOUT > 3 V typ.; IN low 3 high 2 IN Vbb PROFET OFF 4 I Logic unit 5 ST GND 1 L(OL) Open load detection OUT V V bb OUT Normal load current can be handled by the PROFET itself. Signal GND Data Sheet 6 2013-10-10 BTS307 Vbb disconnect with charged external inductive load Inductive Load switch-off energy dissipation E bb high 2 S 3 IN Vbb PROFET 4 E AS OUT IN 5 D ST PROFET GND = OUT ST 1 V ELoad Vbb EL GND ZL bb L { RL ER If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Energy stored in load inductance: 2 EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL 0 : EAS= Data Sheet 7 IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) 2*RL bb |VOUT(CL)| 2013-10-10 BTS307 Options Overview all versions: High-side switch, Input protection, ESD protection and reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version BTS 410D2 410E2 410G2 410H2 Overtemperature protection with hysteresis Tj >150 C, latch function10)11) Tj >150 C, with auto-restart on cooling Short circuit to GND protection D E G X X X X X X X 308 H X switches off when VON>3.5 V typ. and Vbb> 8 V typ10) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.10) (when first turned on after approx. 150 s) 307 X X X Achieved through overtemperature protection X Open load detection in OFF-state with sensing current 6 A typ. in ON-state with sensing voltage drop across power transistor X X X X X X Undervoltage shutdown with auto restart X X X X X X Overvoltage shutdown with auto restart X X X X - X X X X X X X X X - X X X -12) 12) -12) X X X Status feedback for overtemperature short circuit to GND short to Vbb - open load X X X X X X undervoltage X - - - X - overvoltage X - - - - - X X X X X X X X X X X X X X X X X X X X X Status output type CMOS X Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND X X ) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 11) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 12) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 10 Data Sheet 8 2013-10-10 BTS307 Timing diagrams Figure 3a: Short circuit: shut down by overtempertature, reset by cooling Figure 1a: Vbb turn on, : IN IN V V OUT t d(bb IN) bb normal operation V I OUT Output short to GND I L L(SCp) I L(SCr) A ST open drain ST t t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s Figure 2a: Switching an inductive load, Heating up requires several milliseconds, depending on external conditions. External shutdown in response to status fault signal recommended. Figure 4a: Overtemperature: Reset if Tj <Tjt IN IN ST ST V V OUT OUT T I J L t t Data Sheet 9 2013-10-10 BTS307 Figure 5a: Open load, : detection in OFF-state, turn on/off to open load Figure 6a: Undervoltage: IN IN t d(ST OL3) ST V bb V bb(under) Vbb(u cp) V bb(u rst) V OUT V OUT I L normal open ST open drain t *) t td(ST,OL3) depends on external circuitry because of high impedance *) IL = 6 A typ Figure 6b: Undervoltage restart of charge pump V on Figure 5b: Open load, : detection in OFF-state, open load occurs in off-state ST V on-state off-state IN V OUT V V OUT(OL) V I L normal *) open bb(u rst) bb(u cp) bb(under) Vbb normal *) charge pump starts at Vbb(ucp) =5.6 V typ. t *) IL = 6 A typ Data Sheet 10 2013-10-10 BTS307 Figure 7a: Overvoltage, no shutdown: IN Vbb V VON(CL) OUT VOUT(OL) ST t Data Sheet 11 2013-10-10 BTS307 Package and Ordering Code All dimensions in mm PG-TO263-5-2 BTS307 E3062A Published by Infineon Technologies AG, D-81726 Munchen (c) Infineon Technologies AG 201 All Rights Reserved. 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Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 12 2013-10-10