PROFET® BTS307
Data Sheet 1 2013-10-10
+ V
bb
IN
ST
Signal GND
ESD
PROFET
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
Smart High-Side Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection
Fast demagnetization of inductive loads
Reverse battery protection
1
)
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Green Product (RoHS compliant)
AEC Qualified
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
Most suitable for inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
1
) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection
Vbb(AZ)
65
V
Operating voltage
Vbb(on)
5.8 ... 58
V
On-state resistance
RON
250
m
Load current (ISO)
IL(ISO)
1.7
A
PG-TO263-5-2
BTS307
Data Sheet 2 2013-10-10
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
Vbb
65
V
Supply voltage for short circuit protection2)
Tj Start=-40 ...+150°C
Vbb
40
V
Load current (Short circuit current, see page 4)
IL
self-limited
A
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), TC 25 °C
Ptot
50
W
Electrostatic discharge capability (ESD) IN, ST:
(Human Body Model) all other pins:
VESD
1.0
tbd (>1.0)
kV
Input voltage (DC)
VIN
-0.5 ... +36
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 5
IIN
IST
2.0
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance chip - case:
junction - ambient (free air):
RthJC
RthJA
--
--
--
--
2.5
75
K/W
2
) Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External
shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with
higher Vbb.
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback
5
OUT
(Load, L)
O
Output to the load
BTS307
Data Sheet 3 2013-10-10
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A, Vbb = 24 V Tj=25 °C:
Tj=150 °C:
RON
--
220
390
250
500
m
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
IL(ISO)
1.4
1.7
--
A
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=32 V, VIN= 0, see diagram
page 6
IL(GNDhigh)
--
--
1.1
mA
Turn-on time to 90% VOUT:
Turn-off time to 10% VOUT:
RL = 12 , Vbb = 20V, Tj =-40...+150°C
ton
toff
15
20
--
--
80
70
s
Slew rate on, 10 to 30% VOUT,
RL = 12 , Vbb = 20V, Tj =-40...+150°C
dV /dton
--
--
6
V/s
Slew rate off, 10 to 30% VOUT,
RL = 12 , Vbb = 20V, Tj =-40...+150°C
-dV/dtoff
--
--
7
V/s
Operating Parameters
Operating voltage 3) Tj =-40...+150°C:
Vbb(on)
5.8
--
58
V
Undervoltage shutdown Tj =-40...+150°C:
Vbb(under)
2.7
--
4.7
V
Undervoltage restart Tj =-40...+150°C:
Vbb(u rst)
--
--
4.9
V
Undervoltage restart of charge pump
see diagram page 10 Tj =-40...+150°C:
Vbb(ucp)
--
5.6
7.5
V
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
--
0.4
--
V
Overvoltage protection4) Tj =-40...+150°C:
Ibb=40 mA
Vbb(AZ)
65
70
--
V
Standby current (pin 3),
VIN=0 Tj=-40...+150°C:
Ibb(off)
--
10
50
A
Operating current (Pin 1)5), VIN=5 V
IGND
--
2.2
--
mA
3
) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
4
) See also VON(CL) in table of protection functions and circuit diagram page 6.
5
) Add IST, if IST > 0, add IIN, if VIN>5.5 V
BTS307
Data Sheet 4 2013-10-10
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Protection Functions
6
)
Initial peak short circuit current limit (pin 3 to 5)
IL(SCp)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
--
--
4.0
--
10
--
19
--
--
A
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150°C:
VON(CL)
59
--
75
V
Thermal overload trip temperature
Tjt
150
--
--
°C
Thermal hysteresis
Tjt
--
10
--
K
Reverse battery (pin 3 to 1) 7)
-Vbb
--
--
32
V
Diagnostic Characteristics
Open load detection current
(included in standby current Ibb(off))
IL(off)
--
6
--
A
Open load detection voltage Tj=-40..150°C:
VOUT(OL)
2.4
3
4
V
Short circuit detection voltage
(pin 3 to 5)
VON(SC)
--
2.5
--
V
Input and Status Feedback8)
Input resistance
see circuit page 5
RI
--
20
--
k
Input turn-on threshold voltage
VIN(T+)
1
--
2.5
V
Input turn-off threshold voltage
VIN(T-)
0.8
--
--
V
Input threshold hysteresis
VIN(T)
--
0.5
--
V
Off state input current (pin 2), VIN = 0.4 V
IIN(off)
1
--
30
A
On state input current (pin 2), VIN = 3.5? V
IIN(on)
10
25
70
A
Delay time for status with open load
after Input neg. slope (see diagram page 10)
td(ST OL3)
--
200
--
s
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
VST(high)
VST(low)
5.4
--
6.1
--
--
0.4
V
6
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
7
) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 6).
8
) If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS307
Data Sheet 5 2013-10-10
Truth Table
Input-
Output
Status
level
level
BTS307
Normal
operation
L
H
L
H
L
H
Open load
L
H
9)
H
H
H
Short circuit
to GND
L
H
L
L
L
L
Short circuit
to Vbb
L
H
H
H
H
H
Overtem-
perature
L
H
L
L
L
L
Under-
voltage
L
H
L
L
L
L
Overvoltage
no overvoltage shutdown,
see normal operation
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 10)
9
) Power Transistor off, high impedance, internal pull up current source for open load detection.
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
VIN
IST
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
1
2
4
3
5
RGND
Input circuit (ESD protection)
IN
GND
I
R
ESD-ZD I
I
I
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Status output
ST
GND
ESD-
ZD
+5V
RST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 0 at 1.6 mA, ESD zener diodes are not to
be used as voltage clamp at DC conditions. Operation
in this mode may result in a drift of the zener voltage
(increase of up to 1 V).
Short circuit detection
Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by
the PROFET itself, external switch off recommended!
Short circuit
detection
Logic
unit
+ Vbb
OUT
VON
BTS307
Data Sheet 6 2013-10-10
Inductive and overvoltage output clamp
+ Vbb
OUT
GND PROFET
VZ
VON
VON clamped to -- V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PROFET
VZ2
I
R
VZ1
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 ,
RST= 15 k, RI= 20 k typ.
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Open load
detection
Logic
unit VOUT
Signal GND
IL(OL)
OFF
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb 1
2
4
3
5
VIN VST VGND
+5V
12k
For Vbb=24V and VIN=0V: VST>2.8V @ IST if pulled up as shown.
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VGND
VIN VST
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
BTS307
Data Sheet 7 2013-10-10
Vbb disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
Vbb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
L
RL
{ZL
Energy stored in load inductance:
EL = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL 0 :
EAS= IL· L
2·RL·(Vbb + |VOUT(CL)|)· ln (1+ IL·RL
|VOUT(CL)| )
BTS307
Data Sheet 8 2013-10-10
Options Overview
all versions: High-side switch, Input protection, ESD protection and reverse battery
protection with 150 in GND connection, protection against loss of ground
Type BTS
410D2
410E2
410G2
410H2
307
308
Logic version
D
E
G
H
Overtemperature protection with hysteresis
Tj >150 °C, latch function10)11)
Tj >150 °C, with auto-restart on cooling
X
X
X
X
X
X
Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 8 V
typ10) (when first turned on after approx. 150 s)
X
X
switches off when VON>8.5 V typ.10)
(when first turned on after approx. 150 s)
Achieved through overtemperature protection
X
X
X
X
Open load detection
in OFF-state with sensing current 6 A typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
X
X
X
X
Overvoltage shutdown with auto restart
X
X
X
X
-
X
Status feedback for
overtemperature
short circuit to GND
short to Vbb
open load
undervoltage
overvoltage
X
X
-12)
X
X
X
X
X
-12)
X
-
-
X
-
-12)
X
-
-
X
X
X
X
-
-
X
X
X
X
X
-
X
X
X
X
-
-
Status output type
CMOS
Open drain
X
X
X
X
X
X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
X
X
X
X
X
X
Protection against loss of GND
X
X
X
X
X
X
10
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
11
) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
12
) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
BTS307
Data Sheet 9 2013-10-10
Timing diagrams
Figure 1a: Vbb turn on, :
IN
V
OUT
t
V
bb
ST open drain
A
A
d(bb IN)
t
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 s
Figure 2a: Switching an inductive load,
IN
ST
OUT
L
t
V
I
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
IN
ST
L
t
I
L(SCr)
I
I
L(SCp)
V
OUT
Output short to GND
normal
operation
Heating up requires several milliseconds, depending on external
conditions. External shutdown in response to status fault signal
recommended.
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
OUT
J
t
V
T
BTS307
Data Sheet 10 2013-10-10
Figure 5a: Open load, : detection in OFF-state, turn
on/off to open load
IN
ST
OUT
L
t
V
I
open
normal
t
d(ST OL3)
*)
td(ST,OL3) depends on external circuitry because of high
impedance
*) IL = 6 A typ
Figure 5b: Open load, : detection in OFF-state, open
load occurs in off-state
IN
ST
OUT
L
t
V
I
open
normal
normal
*)
*)
OUT(OL)
V
*) IL = 6 A typ
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST open drain
V
V
bb(under)
bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
bb(under)
V
V
bb(u
rst)
V
bb(u cp)
off-state
on-state
V
bb
V
on
charge pump starts at Vbb(ucp) =5.6 V typ.
BTS307
Data Sheet 11 2013-10-10
Figure 7a: Overvoltage, no shutdown:
IN
V
OUT
t
V
bb
ST
ON(CL)
V
OUT(OL)
V
BTS307
Data Sheet 12 2013-10-10
Package and Ordering Code
All dimensions in mm
PG-TO263-5-2 Ordering code
BTS307 E3062A
SP001104812
Published by
Infineon Technologies AG,
D-81726 München
© Infineon Technologies AG 201
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.