MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,..:,>$' \.>.l , c*\~ ~!.?,:$,! a- 9500/355 )ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge Ic ColleotorCurrent--Continuous ,, &*? `%' .,i.! ?i.~,;, ,,. `.$<3$ Vdc MAdo 1 I Devioe Dissipation @ TA = 25C Derate above 25C @ Tc = 25C Derata above 25C 300 1.7 750 4.3 OperatingJunotionand Storage , `\,ttJ TemperatureRange ~>)~:, ELECTRICAL CHARACTE~.WCA 500 2.86 1250 7.1 mW mW/OC mW mWPC `c -66 to 200 II ;* "$J$i<.i.,$l\ ~.... = 25C unless othem.se noted.) OFF CMRA~ERISTi~%t@>,,# Colleotor+mitter Q&~o~ (1C-10 mA**l&;QF" Vokge(l) Collaotor+@~~down Vokge (1C= lg*,fg = o) t` Emqe&@hrtiow Voltage Colltior CutoffCument ~CB = 45 Vdo) v(BR)CEO 80 -- Vdo V(BR)CBO 70 -- Vdo V(BR)EBO 6.0 ICEO -- 2.0 nAdc -- -- 2.0 2.5 tide fldc -- 2.0 nA& iCBO NCB = 45 Vdo, TA = 1500C) Base CutoffCurrent WEB. 5.0 Vdo) e IEBO Vdo (1) Pulsed. Pulse Width 250 to 350 W, D@ Qcle 1.0 to 2.0%. (mntinuad) RN O 9/93 @Motorola, Im. 19% M-ROLA @ 2N2920 SERIES ELECTRICAL CHARACTERISTIC= -- wntinud mA= 25C unless cthewise noted.) Characteristic Symbol Mln M= Unit ON CHAWCTERISTICS DC Current Gain(l) 2N2920 (Ic = 10 @&, vCE = 5.0 Vdo) (IC = 0.1 rnAdc, VCE = 5.0 Vdc) (ic = 1.0 rnAdc, VCE = 5.0 Vdc) (1c. 1.0 ~do, VCE = 5.0 Vdo, TA = +50C) -- hFE 175 235 300 50 Colleotor-Emitter Saturation Voltage (IC = 1.0 mAdc, [B = 0.1 rnA&) vCE(q) -- Bas~Emtier Saturation Voltage (1c = 1.0 mAdo, IB = 0.1 tide) vBE(~at) 0.5 SMALL41GNAL *,\ *'X,l, $J,$<,. ,,.,'~ ,'$:. `!i.,,,1 +ts., ,:?:L*S ,*,Y *'\$,~, .?., <>.>:. . .:+ ~,<y `t!.~,~:>, . ,~. ..>~' ,,,..~,?> `"Vdc 0.3 ,::4 `$e$$:~ ` ..:>yt~~h.$!y'~' ~:?<$"~,? * .,:5` $ti `k;. ;" Vdc ,. $Ji$~>:\* ,, `~t 600 800 1000 -- CHARAOTERISTl@ Colltior+ase Capaoitaw @cB=5.0 Vdo, iE = O, f = 0.1 ctO 1.0 $$~o ~$:. ,,-,,:$\t\~~':,' it~. .,,... . -- ,?,?, @e 4 $iy&> 3.0 .j~~.' ,,.,:.+..," .,,k -- hg$~$, .~;:,, $+'*%;<. - \*,+$~:@ ,?i;.,$;,...v<,JiJ$.$. SmalWgnal Current Transfer Ratio, Magnitude (IC = 0.5 mAdc, VCE = 5.0 Vdo,f = 20 MHz) l~el Input Impedanse (IC = 1.0 rnAdc, VCE = 5.0 Vdo, f = 1.0 kHz) Voltage Feedbask Ratio (IC = 1.0 mAdo, VCE = 5.0 V&, f = 1.0 kHz) O@ut Admittanm (tc = 1.0 mAdc, VCE = 5.0 Vdo, f = 1.0 kHz) Noise Figure (RG = 10 kohm) (ic = 10 ~do, vCE = 5.0 Vdo, f = 100 (f= 1.0 kHz) (f=lokHz) Hz) MATCHING CHARACTERISTIOS ~> ,.~. w pF -- 30 kohms 1.0 X1 O-3 60 ~hos dB -- hFEl~F~ Bas*Emitter Vohge Differential(l) ,~~.,''kx~ (1c = 10 ~dc, vCE = 5.0 Vdo) t,,~t,,, ,]; (Ic = 100 ~&, vCE _ 5.0 V~$'"~~ (Ic = l.o ~do, vCE = 5.0g~$@.+,+:~ lVBE1-VB~l Bas~EmMer Vohge Differ~~FGhange (1C= 100 @k, Vq:$,$.o Vdc) ,:i>~ ii.,~ ~", ,>, `?::ti \ lVBE1-VB~i Dueto Temperature ~A = 25 tO +5"C) CA= 25 to 125C) 20 NF ,,$$\\' .+,.y;\ ,> fi:>l,,.>~ii ,*?,Ttx ,.:\),: ,.. c,f.:\~.,> i> ,,,., DC Current Gtin Ratio(2) (1c = 0.1 ti&, vCE = 5.0 Vdo) (1) Pulsed. PulsQ.@&O (2) The Iarger,qu_hdl ,.}4 ,e.l.~ . ..+:, -- MHz) -- -- 5.0 3.0 3.0 0.9 1.0 -- -- -- 5.0 3.0 5.0 -- -- 0.8 1.0 -- mVdc mVdc to W W, DuW Qcle 1.0 to 2.0%. b plaoed in the denominator. ,,it,$.~.},t:., ., `?( .%-"~ COMMERCIAL PLUS AND MIUAERO SMALL S!GNAL TRANSISTOR DATA 2N2920 SERIES PACtiGE DIMENSIONS 4. mlmD 5 W~R 6. SASE 7. Um & oMrrrEo II tom~e ohanges without furthernottito anyprodu~ herein. Motorola m~ee nowarmnty, representation orguarerrree regwdng uote for any perNwler pu~e, nor does Motorola assume any lisbi~i arising out of the ~~tion or use of any pmduti or cimuk, anyand~l ~ihty, including withouttimitationoonsequentid oritide~damagee. ~~tiperameteremn anddovqin dtierenf parameters, inoluding Typid# must be Wied for -h aefomer appti~tion by metomer'st~hnhl ex~ti. Motorola k not ~n~ ~ timnse under h patent fights nor the rights of others. Motorola produote are not -gned, intended, or authorized for use as mmponente in sg~~ ~ forsurgid impbtnf into the body, or other ~@ons intended to sum or -n tife, or for any other ap~ition in whfi the failure of th&~~&tila pmdud muld aeate a situation where wreond injuy or death may ar. Should Buyer ~rtiase or ~ Motorok prodW for any wh ~$w!tioruneuthw"zed @@on, Buyerehdl Indemn.fi end hold Motorola srrd b offiira, employees, subtiariee, ~tiat-, sndd~nbutors harmless "~-efl c~ms, -, damages, and expenses, and reaeonWe attorney fees arising out of, dir=~ or Indir-ly, any claim of pereond injury or death &~~d&t uoh unintended or unauthorized use, even Ifsudr Wm dlegeethat Motorolawae negligent regarding the design or manufedure of the @ of Motoml& Ino. Motomlaj IN. k an EqW O~rtunity/Affirmative Adion Empbyer, @ are regieterd tratim- Literature DIMbution Oentem USA Motorola Merature Dleffibtio~ P.O. Box 2W12; Phoenix, Arizona S50SS. EUROPE Motorola Ltd.; European Ltiemture OentrWSSTanners Drfve, Bl*elande, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; @2-1, Nishffiotanda, ShinagawWu, T*o 141, Japan. ASIA PACIFIC Motorola Semi~nd@ore H.K. Ltd.; Silkn H~ur Oenter, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. M~ROLA 1PHW4101 1-2 PRIN~D IN USA WW MPWPOD CPTO YDACM 2N292W~ lllllllllllllllllllllllllllllllllilllllllllllllllllllll