2N2920JANS - Motorola / Freescale Semiconductor

MOTOROU

SEMICONDUCTOR TECHNICAL DATA Orderthis document

by 2N2920JANID

2N2920JAN, JTX, JTXV, JANS ,111,t

Processed per MIL4-I 9500/355 ,11111

)ual N,PNSilicon 411

Small+ ignal Transistors c

.,..:,>$’*\~

\.>.l,

~!.?,:$,!

Emitter+ase Vohge VEBO ,, &*? ‘%’

ColleotorCurrent—Continuous .,i.!?i.~,;,

Ic ,,. ‘.$<3$

Devioe Dissipation

@TA =25°C 300 500

Derateabove25°C 1.7 2.86

@Tc =25°C 750 1250

Derata above 25°C 4.3 7.1

OperatingJunotionandStorage ,-66 to 200

TemperatureRange ‘\,ttJ

.!.

Unit

Vdc

Vdo

Vdc

MAdo

mW/OC

mWPC

‘c I

~>)~:, ;*

“$J$i<.i.,$l\

~.....

ELECTRICAL CHARACTE~.WCA =25°C unless othem.se noted.)

OFF CMRA~ERISTi~%t@>,,#

Colleotor+mitter Q&~o~ Vokge(l) v(BR)CEO 80 Vdo

(1C-10 mA**l&;QF” —

Collaotor+@~~down Vokge V(BR)CBO 70 Vdo

(1C=lg*,fg =o) —

t‘

Emqe&@hrtiow Voltage V(BR)EBO 6.0 Vdo

ICEO —2.0 nAdc

Colltior CutoffCument iCBO

~CB =45Vdo) —

NCB =45 Vdo, TA =1500C) 2.0 tide

—2.5 fldc

BaseCutoffCurrent IEBO —2.0 nA&

WEB. 5.0 Vdo)

e(1) Pulsed. Pulse Width 250 to 350 W, D@ Qcle 1.0 to 2.0%. (mntinuad)

RN O

9/93

@M-ROLA

@Motorola,

Im. 19%

2N2920 SERIES

ELECTRICAL CHARACTERISTIC= —wntinud mA=25°C unless cthewise noted.)

Characteristic Symbol Mln M= Unit

ON CHAWCTERISTICS

DC Current Gain(l) hFE —

2N2920

(Ic =10 @&, vCE =5.0 Vdo) 175 600 *,\

(IC =0.1 rnAdc, VCE =5.0 Vdc) *’X,l,

235 $J,$<,.,,.,’~,’$:.

800 ‘!i.,,,1+ts.,

(ic =1.0 rnAdc, VCE =5.0 Vdc) 300 1000 ,:?:L*S

,*,Y*’\$,~,

(1c. 1.0 ~do, VCE =5.0 Vdo, TA =+50C) .?.,<>.>:.

~,<y

.. .:+

50 —‘t!.~,~:>,..,~.

..>~’

Colleotor-Emitter Saturation Voltage ,,,..~,?>

vCE(q) —

(IC =1.0 mAdc, [B =0.1 rnA&) 0.3 ,::4 ‘$e$$:~‘“Vdc

..:>yt

~~h.$!y’~’‘

*.,:5

~:?<$”‘

~,?

Bas~Emtier Saturation Voltage vBE(~at) 0.5 $ti ‘k;. ;“ Vdc

(1c =1.0 mAdo, IB =0.1 tide) $Ji$~>:\*

,, ‘~t

SMALL41GNAL CHARAOTERISTl@

Colltior+ase Capaoitaw c-

@cB=5.0 Vdo, iE =O,f=0.1 tO1.0 MHz) —pF

SmalWgnal Current Transfer Ratio, Magnitude l~el $$~o ~$:. 20

(IC =0.5 mAdc, VCE =5.0 Vdo,f=20 MHz) —

.,,...

,,-,,:$\t\~~’:,’it~-.

,?,?,.

—

Input Impedanse @e 4$iy&> 3.0 30 kohms

(IC =1.0 rnAdc, VCE =5.0 Vdo, f=1.0 kHz) .j~~.’

,,.,:.+..,”

Voltage Feedbask Ratio .,,k

hg$~$, —1.0 X1 O-3

(IC =1.0 mAdo, VCE =5.0 V&, f=1.0 kHz) $+’*%;<..~;:,,

O@ut Admittanm \*,+$~:@ –60 ~hos

(tc =1.0 mAdc, VCE =5.0 Vdo, f=1.0 kHz) ,?i;.,$;,...v<,JiJ$.$.

Noise Figure (RG =10 kohm) ,.~. wNF dB

(ic =10 ~do, vCE =5.0 Vdo, f=100 Hz) ~> —5.0

,,$$\\’

(f= 1.0 kHz) .+,.y;\

>~ii,>

fi:>l,,.

(f=lokHz) —3.0

,*?,Ttx,.:\),:

,.. c,f.:\~.,>i> —3.0

MATCHING CHARACTERISTIOS ,,,.,

DC Current Gtin Ratio(2) hFEl~F~ 0.9 1.0

(1c =0.1 ti&, vCE =5.0 Vdo) —

Bas*Emitter Vohge Differential(l) ,~~.,’’kx~ lVBE1-VB~l

(1c =10 ~dc, vCE =5.0 Vdo) t,,~t,,, ,]; mVdc

5.0

(Ic =100 ~&, vCE _5.0 V~$’”~~ —

—3.0

(Ic =l.o ~do, vCE =5.0g~$@.+,+:~ —5.0

Bas~EmMer Vohge Differ~~FGhange DuetoTemperature lVBE1-VB~i

(1C=100 @k, Vq:$,$.o Vdc) mVdc

~A =25tO+5”C) —0.8

,:i>~

,>,

ii.,~‘?::ti~“, CA= 25 to 125°C) —

\1.0

(1) Pulsed. PulsQ.@&O to WW, DuW Qcle 1.0 to 2.0%.

(2) The Iarger,qu_hdl bplaoed inthe denominator.

,.}4,e.l.~....+:,

,,it,$.~.},t:.,

., .%-”~

‘?(

●

COMMERCIAL PLUS AND MIUAERO SMALL S!GNAL TRANSISTOR DATA

2N2920 SERIES

PACtiGE DIMENSIONS

4. mlmD

5W~R

6. SASE

7. Um

&oMrrrEo

tom~e ohangeswithoutfurthernottito anyprodu~ herein. Motorola m~ee nowarmnty, representationorguarerrreeregwdng

uotefor any perNwler pu~e, nor does Motorola assume any lisbi~i arising out of the ~~tion or use of any pmduti or cimuk,

anyand~l ~ihty, includingwithouttimitationoonsequentid oritide~damagee. ~~tiperameteremn anddovqin dtierenf

parameters, inoludingTypid# must be Wied for -h aefomer appti~tion bymetomer’st~hnhl ex~ti. Motorola k

not ~n~ ~timnse under hpatent fights northe rights of others. Motorolaproduoteare not -gned, intended, orauthorized foruse as mmponente in

sg~~ ~forsurgid impbtnf intothe body, orother ~@ons intended to sum or -n tife,or for anyother ap~ition inwhfi the failure of

th&~~&tila pmdud muld aeate asituation where wreond injuy or death may ar. Should Buyer ~rtiase or ~Motorok prodW for any wh

~$w!tioruneuthw”zed @@on, Buyerehdl Indemn.fi endhold Motorola srrdboffiira, employees, subtiariee, ~tiat-, sndd~nbutors harmless

“~-efl c~ms, -, damages, and expenses, and reaeonWe attorney fees arising out of, dir=~ or Indir-ly, any claim of pereond injury or death

&~~d&t uohunintended or unauthorized use,even Ifsudr Wm dlegeethat Motorolawae negligent regardingthe design ormanufedure of the @

@are regieterd tratim- of Motoml& Ino. Motomlaj IN. kan EqW O~rtunity/Affirmative Adion Empbyer,

Literature DIMbution Oentem

USA Motorola Merature Dleffibtio~ P.O.Box2W12; Phoenix, Arizona S50SS.

EUROPE Motorola Ltd.; European Ltiemture OentrWSSTannersDrfve, Bl*elande, Milton Keynes, MK14 5BP,England.

JAPAN: Nippon Motorola Ltd.; @2-1, Nishffiotanda, ShinagawWu, T*o 141,Japan.

ASIA PACIFIC Motorola Semi~nd@ore H.K. Ltd.; Silkn H~ur Oenter,No. 2Dai King Street, Tai Po Industrial Estate,Tai Po, N.T.,Hong Kong.

M~ROLA 1PHW4101 1-2 PRIN~D IN USA WW MPWPOD CPTO YDACM 2N292W~

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