PN2369A MMBT2369A
NPN Switching Transistor
This device is designed for high speed saturated switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Volt age 15 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.5 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN2369A MMBT2369A*
PDTotal Device Dissipation
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resis t ance, Junct i on to Cas e 125 °C/W
RθJA Thermal Resis t ance, Junct i on to Ambient 357 556 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 1S
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PN2369A / MMBT2369A
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 15 V
V(BR)CES Collector-Emitter Breakdown Voltage IC = 10
µ
A, VBE = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10
µ
A, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10
µ
A, IC = 0 4.5 V
ICBO Coll ector Cutoff Current VCB = 20 V, IE = 0
VCB = 20 V, IE = 0, TA = 125°C0.4
30
µ
A
µ
A
ON CHARACTERISTICS
hFE DC Current Gain* IC = 10 mA , VCE = 1.0 V
IC = 10 mA,VCE = 0.35 V,TA =-55°C
IC = 100 mA, V CE = 1. 0 V
40
20
20
120
VCE(sat)Collector-Emitt er S aturation Voltage* IC = 10 mA , IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA,TA =125°C
IC = 30 mA, I B = 3.0 mA
IC = 100 mA, IB = 10 mA
0.2
0.3
0.25
0.5
V
V
V
V
VBE(sat)Base-Emitter Saturat i on V ol tage IC = 10 mA , IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA,TA = -55°C
IC = 10 mA, IB = 1.0 mA,TA= 125°C
IC = 30 mA, I B = 3.0 mA
IC = 100 mA, IB = 10 mA
0.7
0.59
0.85
1.02
1.15
1.6
V
V
V
V
V
Symbol Parameter Test Conditions Min Max Units
SMALL SIGNAL CHARACTERISTICS
Cobo Output Ca pacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pF
hfe Small-Signal Current Gain IC = 10 mA, VCE = 10 V,
RG = 2.0 kΩ, f = 100 MHz 5.0
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
tsStorage Time IB1 = IB2 = IC = 10 mA 13 ns
ton Turn-On Time VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA 12 ns
toff Turn-Off Time VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA, IB2 = 1.5 mA 18 ns
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Typical Characteristics
DC Cur rent Gain
vs Colle ct or Curre nt
0.01 0.1 1 10 100
50
100
150
200
I - COLLECTOR CURRE NT ( mA)
h - DC C UR REN T GAIN
FE
C
V = 1 .0V
CE
- 40 °C
25 ° C
125 °C
Col lect o r-Emitter Satu ration
Vo lt age vs C o llector Cur rent
0.1 1 10 100 500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA )
V - COLLE CTOR-EMITTER VOLTAGE (V)
CESAT
- 40 °C
25 °C
C
β= 10
125 °C
Base-Emi tter ON Voltage vs
Colle ct or Cur rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMIT TER ON VOLT AGE (V)
BE(O N)
C
V = 1.0V
CE
- 40°C
25 °C
125 °C
B ase-E mi tter Satu rati on
Vo l t age vs C o llect o r C u r ren t
0.1 1 10 100 300
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (mA)
V - BASE -EMITTER VOLTAGE (V)
BESAT
C
β= 10
- 40 °C
25 °C
125 °C
Co llector-Cu to ff Cur rent
vs Amb ient Temperatur e
25 50 75 100 125 150
1
10
100
600
T - AM BIE NT TEM PE RATURE ( C)
I - COLLECTOR C URR ENT (nA)
A
V = 20V
CB
°
CBO
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Typical Characteristics (continued)
Outpu t Capacitance vs
Reverse Bias Voltage
0.1 0.5 1 5 10 50
0
1
2
3
4
5
REVERSE B IAS VO LTAG E (V)
CAPACITANCE (pF)
C
ibo
C
obo
F = 1.0MHz
Switch ing Times vs
Collector Current
2 5 10 20 50 100 300
1
2
5
10
20
50
100
I - COL LEC TOR CUR RENT (mA)
SW ITCHING TIMES (n s)
I = 10 I = I = 10
V = 3.0 V
CC
C
t
s
t
s
t
f
t
s
t
s
t
s
t
s
t
s
t
d
t
s
t
s
t
r
C B1 B2
Storage Time vs Turn On
an d Turn Off Base Cu rrents
0246810
-12
-10
-8
-6
-4
-2
0
I - TURN ON BASE CURRENT (mA)
I - TURN OFF BASE CURRENT (mA)
6.0 ns
4.0 ns
I = 10 mA
C
V = 3.0 V
CC
t = 3.0 ns
s
B1
B2
Storage Time vs Turn On
an d Turn Off Ba se Currents
0246810
-12
-10
-8
-6
-4
-2
0
I - TURN ON BASE CU RRENT ( mA )
I - TURN OFF BASE CURRENT (mA)
6.0 ns
4.0 ns
I = 10 mA
C
V = 3.0 V
CC
t = 3.0 ns
s
B1
B2
Storage Time vs Tu rn On
an d Turn Off Base Currents
0 5 10 15 20 25 30
-30
-25
-20
-15
-10
-5
0
I - TURN ON BASE CURRENT (mA)
I - TURN OFF BASE CURRENT (mA)
I = 100 mA
C
V = 3.0 V
CC
t = 3.0 ns
4. 0 ns
6. 0 ns 8.0 ns
16.0 ns
B1
B2
S
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Switchi n g T imes vs
Amb ien t Temperature
25 50 75 100
0
2
4
6
8
10
12
T - AM BIENT TE MPERATURE ( C)
SWITCHING TIMES (ns)
I = 10 mA, I = 3.0 mA, I = 1.5 mA, V = 3.0 V
CC
A°
t
s
t
s
t
f
t
s
t
s
t
s
t
s
t
s
t
d
t
s
t
s
t
r
C B1 B2
Typical Characteristics (continued)
Rise Time v s . Turn O n Ba s e
Curre nt and Co lle c tor Current
1 10 100 500
0
1
10
50
I - COLLECTOR C U RR ENT (mA)
I - TURN ON BA SE CU RRENT (mA )
C
B1
V = 3.0 V
CC
t = 2.0 ns
r
5.0 n s
10 n s 20 n s
Fall Time vs Turn On
an d Turn Off Ba se Currents
0246810
-6
-5
-4
-3
-2
-1
0
I - TURN ON BASE CU RRENT ( mA )
I - TURN OFF BASE CURRENT (mA)
I = 10 mA
C
V = 3.0 V
CC
t = 7.0 ns
f
8.0 ns
10 ns
B1
B2
Fall Time vs Turn On
an d Tu rn Off Base Currents
0 5 10 15 20 25 30
-30
-25
-20
-15
-10
-5
0
I - TURN ON BASE CURRENT (mA)
I - TURN OFF BASE CURRENT (mA)
B1
B2
I = 100 mA
C
V = 3.0 V
CC
t = 2.0 ns
f 8.0 ns
4.0 ns
3.0 ns
12.0 ns
Del ay Time vs B as e-Emitt er O FF
Voltage and T urn On Base Current
12 51020 50
-6
-5
-4
-3
-2
-1
0
I - TURN ON BASE CURRENT (mA)
V - BASE-EMITTER OFF VO LTAG E (V)
B1
BE(O)
I = 10 mA
C
V = 3.0 V
CC
t = 8.0 ns
d
4. 0 ns
5. 0 ns
3. 0 ns
P owe r D is s ipat ion v s
Ambien t Temperature
0255075100125150
0
100
200
300
400
500
TE MPERATURE ( C )
P - PO W ER D ISSIPAT IO N (mW )
°
D
SOT-23
TO-92
Fall Time vs Turn On
and Turn Off B ase C ur ren ts
024681012
-12
-10
-8
-6
-4
-2
0
I - TURN ON BASE CURRENT (mA)
I - TURN OFF BASE CURRENT (mA)
B1
B2
I = 3 0 mA
C
V = 3.0 V
CC
t = 2.0 ns
5.0 ns
4.0 ns
3.0 ns
f
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Test Circuits
0
- 10
VIN
VIN 0.1 µµ
µµ
µF
'A'
500 ΩΩ
ΩΩ
Ω
890 ΩΩ
ΩΩ
Ω0.1 µµ
µµ
µF1 KΩΩ
ΩΩ
Ω+6V
VOUT
0
- 4V
10% VOUT
ts
toff
10%
90%
VOUT
VIN
0
VOUT
10% Pulse waveform
at point ' A'
toff
VBB = 12 V
VIN = - 20.9 V
VIN
VOUT
10%
90%
VIN
0
ton ton
VBB = - 3.0 V
VIN = + 15.25 V T o sampling oscilloscope input
impedance = 50Ω
Rise Time ≤ 1 ns
Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
0.0023µµ
µµ
µF0.0023µµ
µµ
µF
0.0023µµ
µµ
µF0.0023µµ
µµ
µF
10 µµ
µµ
µF10 µµ
µµ
µF
++
11 V 10 V
500 ΩΩ
ΩΩ
Ω91 ΩΩ
ΩΩ
Ω
0.05 µµ
µµ
µF 0.05 µµ
µµ
µF
0.1 µµ
µµ
µF0.1 µµ
µµ
µF
3.3 KΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω3.3 KΩΩ
ΩΩ
Ω
220 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
VCC = 3.0 V
VBB
Pulse generator
VIN Rise Time < 1 ns
Source Impedance = 50Ω
PW ≥ 300 ns
Duty Cycle < 2%
56 ΩΩ
ΩΩ
Ω
FIGURE 1: Charge Storage Time Measurement Circuit
FIGURE 2: tON, tOFF Measurement Circuit
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
TO-92 Tape and Reel Data
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130m m x
83mm
Inter med iate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102m m x 51mm
Immed iate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX
NO EOL
CODE TO-92 STANDARD
STRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267m m x 375mm
Inter med iate Box
FSCINT
Label
Customized
Label
333mm x 231m m x 183mm
Inter med iate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Pack ing Style Q u antity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
U nit weight = 0 .2 2 gm
Reel w e ight with compo nents = 1.04 kg
Ammo weight w ith components = 1.02 kg
Max quantity p er interme d iate box = 1 0,000 units
F63TNR
Label
5 Ammo boxes per
Inter med iate Box
Customized
Label
327mm x 158m m x 135mm
Immed iate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATI ON
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Inter med iate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK74 1B019
FS ID: PN 2 22N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F (F6 3TNR) 3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z TO-92 STANDARD
STRAIGHT FOR: PKG 94 NO LEADCLIP 2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style “A”, D26Z, D70 Z (s/h)
Machine Op tion “A” (H)
Style “E ”, D2 7Z, D 71Z (s/ h)
Machine Option “E” (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COL LECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ITEM DESCRIPTION
Base of Package to Lead Bend
Com p on en t Heig ht
Lead Clinch Height
Com p on en t Ba s e He ig ht
Com p on en t Al ig nm e nt ( sid e/s id e )
Com p on en t Al ig nm e nt ( front/back )
Com p on en t Pitc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Le ngth
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0. 09 8 (m ax )
0. 92 8 (+ /- 0.025)
0. 63 0 (+ /- 0.020)
0. 74 8 (+ /- 0.020)
0. 04 0 (m ax )
0. 03 1 (m ax )
0. 50 0 (+ /- 0.020)
0. 50 0 (+ /- 0.008)
0. 15 0 (+ 0 .00 9, -0 .0 10 )
0. 24 7 (+ /- 0.007)
0. 10 4 (+ /- 0 . 01 0)
0. 01 8 (+ 0 .00 2, -0 .0 03 )
0. 42 9 (m ax )
0. 20 9 (+ 0 .05 1, -0 .0 52 )
0. 03 2 (+ /- 0.006)
0. 02 1 (+ /- 0.006)
0. 70 8 (+ 0 .02 0, -0 .0 19 )
0. 23 6 (+ /- 0.012)
0. 03 5 (m ax )
0. 36 0 (+ /- 0.025)
0. 15 7 (+ 0 .00 8, -0 .0 07 )
0. 00 4 (m ax )
Note : All d im ensions are in inches.
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
Ree l Di am e ter D1 13. 9 75 14.02 5
Arb or Hol e Di am et er (S ta nd ard) D2 1.160 1.2 00
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner Width W2 1.630 1.690
Hub to Hub Center W idth W3 2.090
Note: All dimensions are inches
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
P Pd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User D ire c tion of Feed
SENSITIVE DEVICES
ELECTROSTATIC
D1
D3
Customized Label
W2
W1 W3
F63 TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
TO-92 (FS PKG Code 92, 94, 96)
TO-92 Package Dimensions
January 2000, Rev. B
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
SOT-23 Packag in g
Configuration: Figure 1.0
Components Leader Tape
500mm mini mum or
125 emp ty pocket s
Tr ailer Tape
300mm mini mum or
75 empty pocke t s
SOT-23 Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOT-23 Packaging Information
Standard
(no flow code) D87Z
Packaging type
Reel Si ze
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag 3,000 10,000
Bo x Di mension (mm ) 187x107x183 343x343x64
Max qt y per B o x 24,000 30,000
Weight per unit (gm) 0.0082 0.0082
Weight per Reel (kg) 0.1175 0.4006
Human readable
Label
Human Readable Label
Human Read able Label sample
343mm x 342mm x 64mm
Intermediate box for L87Z Option
187mm x 107mm x 183mm
Intermediate Box for Standard Option
SOT-23 Unit Orientation
3P 3P 3P 3P
Human Read able
Label
Customiz ed Label
Embossed
Carrier Tape
Antistatic Cover Tape
Packaging Description:
SOT-23
made from a dissipative (carbon filled) polycarbonate
resin. The cov er tape is a multilayer film (Heat Acti vated
Adhesive in nature) primaril y composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni t s per 7" or 177cm di ameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. Thi s and some other opti ons are
described in the Packaging Information table.
These full reel s are individually labeled and pl aced insi de
a standard intermediate made of recyclable corrugated
brown paper w it h a Fai rchil d l ogo pri nti ng. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comes i n dif f erent si zes depending on the number of part s
shipped.
parts are shipped in tape. The carrier tape is
SOT-23 Tape and Reel Data
September 1999, Rev . C
©2000 Fairchild Semiconductor International
Dimensions are in millimeter
Pkg type
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOT-23
(8mm)
3.15
+/-0.10 2.77
+/-0.10 8.0
+/-0.3 1.55
+/-0.05 1.125
+/-0.125 1.75
+/-0.10 6.25
min 3.50
+/-0.05 4.0
+/-0.1 4.0
+/-0.1 1.30
+/-0.10 0.228
+/-0.013 5.2
+/-0.3 0.06
+/-0.02
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
8mm 7" Dia 7.00
177.8 0.059
1.5 512 +0.020/-0. 008
13 +0.5/-0.2 0.795
20.2 2.165
55 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10.9
8m m 13" Dia 13.00
330 0.059
1.5 512 +0.020/-0. 008
13 +0.5/-0.2 0.795
20.2 4.00
100 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10.9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0
SOT-23 Reel Configuration: Figure 4.0
P1 A0
D1
FW
E1
E2
Tc
Wc
K0
T
B0
D0P0 P2
SOT-23 Tape and Reel Data, continued
September 1999, Rev . C
SOT-23 (FS PKG Code 49)
SOT-23 Package Dimensions
September 1998, Rev . A1
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Par t Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™
