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DG183/184/185
Siliconix
S-52895—Rev. D, 16-Jun-97 1
High-Speed Drivers with Dual DPST JFET Switches
Features Benefits Applications
Constant On-Resistance Over
Entire Analog Range
Low Leakage
Low Crosstalk
Break-Before-Make Switching
Rad Hardness
Low Distortion
Eliminates Large Signal Errors
High Precision
Improved Channel Isolation
Eliminates Inadvertent Shorting
Between Channels
Fault Protection
Audio Switching
Precision Switching
Video Switching
Video Routing
Sample/Hold
Aerospace
Description
The DG183/184/185 are precision dual double-pole,
single-throw (DPST) analog switches designed to provide
accurate switching of video and audio signals. This series
is ideally suited for applications requiring a constant
on-resistance over the entire analog range.
The major difference in the devices is the on-resistance
(DG183—10 , DG184—30 , DG185—75  Reduced
errors are achieved through low leakage current (ID(on)
< 2 nA). Applications which benefit from the flat JFET
on-resistance include audio switching, video switching, and
data acquisition.
To achieve fast and accurate switch performance, each
device comprises four n-channel JFET transistors and a
TTL compatible bipolar driver. In the on state, each switch
conducts current equally well in either direction. In the off
condition, the switches will block up to 20 V peak-to-peak,
with feedthrough of less than –60 dB at 10 MHz.
Functional Block Diagram and Pin Configuration
Truth Table
Logic Switch
0 OFF
1 ON
Logic
0
0.8 V
Logic
0
0
.
8
V
Logic
1
20V
L
og
i
c
“1”
2
.
0
V
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70032.
DG183/184/185
2 Siliconix
S-52895—Rev. D, 16-Jun-97
Ordering Information
Temp Range Package Part Number
25to 85
_
C
16
-
Pin Sidebraze
DG183BP
25
t
o
85_C
16
-
Pi
n
Sid
e
b
raze DG184BP
DG183AP/883
16-Pin Sidebraze DG184AP/883,
JM38510/11103BEA
–55 to 125_CDG185AP/883,
JM38510/11104BEA
14
-
Pin Flat Pack
JM38510/11103BXA
14
-
Pi
n
Fl
a
t
P
ac
k
JM38510/11104BXA
Absolute Maximum Ratings
V+ to V– 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V+ to VD 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VD to V– 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VD to VD 22 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to V– 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to VIN 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to VR 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VIN to VR8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VR to V– 27 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VR to VIN 2 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (S or D) DG183 200 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (S or D) DG184, DG185 30 mA. . . . . . . . . . . . . . . . . . . . . . . . .
Current (All Other Pins) 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa
16-Pin Sidebrazeb900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin Flat Packc900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. All leads welded or soldered to PC Board.
b. Derate 12 mW/_C above 75_C
c. Derate 10 mW/_C above 75_C
Schematic Diagram (Typical Channel)
Figure 1.
VR
VLV+
S
IN
D
V–
DG183/184/185
Siliconix
S-52895—Rev. D, 16-Jun-97 3
Specificationsa for DG183
Test Conditions
Unless Otherwise Specified
V+=15VV = 15VV =5V
A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 0.8 V or 2 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –7.5 15 –7.5 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 7.5 10
20 15
25
Source Off
Lk C
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.05 10
1000 15
300
Leakage Current
I
S(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.05 10
1000 15
300
Drain Off
Lk C
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.04 10
1000 15
300 nA
Leakage Current
I
D(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.03 10
1000 15
300
Channel On
Leakage Current ID(on) VD = VS = "7.5 V Room
Hot –0.1 –2
–200 –10
–200
Saturation Drain Current IDSS 2 ms Pulse Duration Room 300 mA
Digital Input
Input Current with
Input Voltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
A
Input Current with
Input Voltage Low IINL VIN = 0 V Full –30 –250 –250
A
Dynamic Characteristics
Turn-On Time ton
See Switching Time Test Circuit
Room 240 400 600
ns
Turn-Off Time toff
See
Switching
Time
Test
Circuit
Room 140 200 220
ns
Source-Off Capacitance CS(off) VS = –5 V, ID = 0 Room 21
Drain-Off Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 17 pF
Channel-On Capacitance CD(on) VD = VS = 0 V Room 17
Off Isolation OIRR f = 1 MHz, RL = 75 Room >55 dB
Power Supplies
Positive Supply Current I+ Room 0.6 1.5 1.5
Negative Supply Current I–
VIN =0Vor5V
Room –2.7 –5 –5
mA
Logic Supply Current IL
V
IN =
0
V
, or
5
V
Room 3.1 4.5 4.5 m
A
Reference Supply Current IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG183/184/185
4 Siliconix
S-52895—Rev. D, 16-Jun-97
Specificationsa for DG184
Test Conditions
Unless Otherwise Specified
V+=15VV = 15VV =5V
A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 0.8 V or 2 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –7.5 15 –7.5 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 22 30
60 50
75
Source Off
Lk C
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.06 1
100 5
100
Leakage Current
I
S(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.05 1
100 5
100
Drain Off
Lk C
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.4 1
100 5
100 nA
Leakage Current
I
D(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.3 1
100 5
100
Channel On
Leakage Current ID(on) VD = VS = "7.5 V Room
Hot –0.02 –2
–200 –10
–200
Digital Input
Input Current with
Input Voltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
Input Current with
Input Voltage Low IINL VIN = 0 V Full –30 –250 –250
Dynamic Characteristics
Turn-On Time ton
See Switching Time Test Circuit
Room 85 150 180
Turn-Off Time toff
S
ee
S
w
it
c
hi
ng
Ti
me
T
es
t
Ci
rcu
it
Room 95 130 150 ns
Source-Off Capacitance CS(off) VS = –5 V, ID = 0 Room 9
Drain-Off Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 6 pF
Channel-On Capacitance CD(on) VD = VS = 0 V Room 14
Off Isolation OIRR f = 1 MHz, RL = 75 Room >50 dB
Power Supplies
Positive Supply Current I+ Room 0.6 3 3
Negative Supply Current I–
VIN
=
0 V, or 5 V
Room –2.7 –5.5 –5.5
Logic Supply Current IL
V
IN =
0
V
,
or
5
V
Room 3.1 4.5 4.5
Reference Supply Current IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG183/184/185
Siliconix
S-52895—Rev. D, 16-Jun-97 5
Specificationsa for DG185
Test Conditions
Unless Otherwise Specified
V15VV 15VV5V
A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 0.8 V or 2 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –10 15 –10 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 35 75
150 100
150
Source Off
Lk C
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.05 1
100 5
100
Leakage Current
I
S(off) VS = "10 V, VD = #10 V Room
Hot 0.07 1
100 5
100
Drain Off
Lk C
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.4 1
100 5
100 nA
Leakage Current
I
D(off) VS = "10 V, VD = #10 V Room
Hot 0.3 1
100 5
100
Channel On
Leakage Current ID(on) VD = VS = "10 V Room
Hot –0.03 –2
–200 –10
–200
Digital Input
Input Current with
Input Voltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
A
Input Current with
Input Voltage Low IINL VIN = 0 V Full –30 –250 –250
A
Dynamic Characteristics
Turn-On Time ton
See Switching Time Test Circuit
Room 120 250 300
ns
Turn-Off Time toff
S
ee
S
w
it
c
hi
ng
Ti
me
T
es
t
Ci
rcu
it
Room 100 130 150 ns
Source-Off Capacitance CS(off) VS = –5 V, ID = 0 Room 9
Drain-Off Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 6 pF
Channel-On Capacitance CD(on) VD = VS = 0 V Room 14
Off Isolation OIRR f = 1 MHz, RL = 75 Room >50 dB
Power Supplies
Positive Supply Current I+ Room 0.6 3 3
Negative Supply Current I– Room –2.7 –5.5 –5.5
Logic Supply Current ILVIN = 0 V, or 5 V Room 3.1 4.5 4.5 mA
Reference Supply Cur-
rent IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG183/184/185
6 Siliconix
S-52895—Rev. D, 16-Jun-97
Typical Characteristics
, I–, I+, I (mA)ILR
I
IN vs. VIN and TemperatureSupply Current vs. Temperature
Temperature (_C) Temperature (_C)
A)IIN (
5
4
3
2
1
0–55 –35 –15 5 25 45 65 85 105 125 0
100
80
60
40
20
–55 –35 –15 5 25 45 65 85 105 125
IL
I+
–IR
–I–
–IINL
IINH
VINL = 0
VINH = 5 V
Switching Time vs. VD and Temperature (DG183)rDS(on) vs. Temperature
Leakage vs. Temperature (DG183) Switching Time vs. VD and Temperature (DG184/185)
(ns)tON,t
OFF
(nA)I , I
SD
Temperature (_C)
rDS(on) ()
(ns)tON,t
OFF
Temperature (_C)
Temperature (_C) Temperature (_C)
100
1–50 –25 0 25 50 75 100 125
10
230
90
–55 –35 –15 5 25 45 65 85 105 125
210
190
170
150
130
110
VD= –7.5 V
IS = –10 mA
tOFF
tON
DG183
DG184
DG185
100
0.1 25 45 65 85 105 125
10
1
ID(on) ID(off)
IS(off)
V+ = 10 V
V– = –20 V
VL = 5 V
VR = 0
130
50
–55 –35 –15 5 25 45 65 85 105 125
120
110
100
90
80
70
60
tOFF
tON
VD = –7.5 V
VD = 7.5 V
VD = –7.5 V
VD = 7.5 V
DG183/184/185
Siliconix
S-52895—Rev. D, 16-Jun-97 7
Typical Characteristics (Cont’d)
ID(off) vs. Temperature (DG184/185)
(nA)
ID
Temperature (_C)
100
10
1
0.1 25 45 65 85 105 125
B Suffix
A Suffix
Capacitance vs. VD or VS (DG183)
VD or VS – Drain or Source Voltage (V)
(pF)CS, D
30
26
22
18
14
10 –8 –4 0 4 8
CD(off)
CS(off)
CD(on)
f = 1 MHz
Off Isolation vs. FrequencyCapacitance vs. VD or VS (DG184/185)
VD or VS – Drain or Source Voltage (V) f – Frequency (Hz)
ISO (dB)
(pF)CS, D
100
90
80
70
60
50
40
30
20
10
0105106107108
V+ = 15 V, V– = –15 V
VR = 0, VL = 5 V
RL = 75
VIN 220 mVRMS
DG183
DG184/185
20
18
16
14
12
10
8
6
4
2
0–10 –8 –6 –4 –2 0 2 4 6 8 10
CD(off)
CS(off)
CD(on)
Capacitance is measured from test terminal
to common.
VINL = 0.8 V
VINH = 2 V
f = 1 MHz
V+ = 10 V, V– = –20 V
VD = –10 V, VS = 10 V
DG183/184/185
8 Siliconix
S-52895—Rev. D, 16-Jun-97
Test Circuits
Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform.
Figure 2. Switching Time
Logic
Input
Switch
Output
tOFF
tON
tr <10 ns
tf <10 ns
90%
50%
0 V
3 V
0 V
0 V
90%
3 V
–3 V
tON: VS = 3 V
tOFF:V
S
= –3 V
VOUT +VSxRL
RL)rDS(on)
–15 V
GND
IN
CL (includes fixture and stray capacitance)
V–
D1VO1
S2
S1
D2
RL2 CL2
VO2
RL1 CL1
VS2
VS1
+15 V
V+
+5 V
VL
Application Hintsa
Switch
V+
Positive Supply
Voltage
(V)
V–
Negative
Supply Voltage
(V)
VL
Logic
Supply Voltage
(V)
VR
Reference
Supply Voltage
(V)
VIN
Logic Input Voltage
VINH(min)/VINL(max)
(V)
VS
Analog Voltage
Range
(V)
DG183
DG184
15b
10
12
–15
–20
–12
5
5
5
GND
GND
GND
2.0/0.8
2.0/0.8
2.0/0.8
–7.5 to 15
–12.5 to 10
–4.5 to 12
DG185
15b
10
12
–15
–20
–12
5
5
5
GND
GND
GND
2.0/0.8
2.0/0.8
2.0/0.8
–10 to 15
–15 to 10
–7 to 12
Notes:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
b. Electrical Parameter Chart based on V+ = 15 V, VL = 5 V, VR = GND.