SKKT 430, SKKH 430 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK(R) 5 Thyristor / Diode Modules /0-1 /001 /(01 / 7344 #444 / 7 44 #444 &,01- 2 344 $ *5 ' + &,$/ 2 6!4 $ * 7849 , 2 8 :%+ -;;, 6!4<7 -;; 6!4<7 -;;, 6!4<#46 -;; 6!4<#46 ##44 ##44 -;;, 6!4<##6 Symbol Conditions &,$/ &( 7849 , 2 8" *744+ :%9 7 <!44=9 , 2 !" :%9 > &01- 7 <!44=9 , 2 !" :%9 ?!% &,-1 ,'A 2 #" :%9 74 ,'A 2 7#" :%9 74 ,'A 2 #" :%9 8! 74 B Values Units 664 *!4" + 8#4 $ $ ! @ !4 $ 7"444 7!444 77#"444 $ $ $B 86"444 $B SKKT 430 /, /,*,C+ , ,'A 2 #" :%9 &, 2 7344 $ ,'A 2 7#" :% ,'A 2 7#" :% 5 7 " 5 4D" 5 4!" / / E SKKH 430 &((9 &0( ,'A 2 7#" :%9 /0( 2 /0019 /(( 2 /(01 5 744 $ ,'A 2 #" :%9 &F 2 7 $9 F< 2 7 $<G 7 G /( 2 4 3 @ /(01 # G *<+ *'<+ H & ,'A 2 7#" :% ,'A 2 7#" :% ,'A 2 7#" :% ,'A 2 #" :%9 < 5 5 #44 5 7444 744 #44 7"4 < "44 $<G /<G G $ & ,'A 2 #" :%9 0F 2 !! E9 < 5 !44 < #444 $ /F, &F, /F( ,'A 2 #" :%9 ,'A 2 #" :%9 ,'A 2 7!4 :%9 ! #44 5 4#" / $ / &F( ,'A 2 7!4 :%9 5 74 $ 0 *AI+ 0 *AI+ 0 *AI+ 0 *I+ ,'A 9 < 7849 < 7#49 < < 44 " < 44!# 44 8 < 44!6 443! < 44! 44# < 447 I 64 J 7#" ;<? ;<? ;<? ;<? :% Features ! "!# Typical Applications $% & ' $% ' ' (% * + , * ' + * + 1) - 2) , . SKKT 1 ,'A 2 7#" :%9 8! 74 -;; 6!4<##6 , / / 1 1 "4 9 9 7 < 7 "4 9 9 7 < 7 -;; 6 L 5 % -;;, -;; I 64 J 7#" :% ! 44 < !444 6844 < 6444 " M 7" N7+ 7# M 7" N#+ " @ D87 /K /K O O <B 76#4 $ 4 $ SKKH 15-10-2003 SCT (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 15-10-2003 SCT (c) by SEMIKRON SKKT 430, SKKH 430 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics 3 Fig. 8 Surge overload current vs. time 15-10-2003 SCT (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm % $ -;; % $ 4 *-;;,+ This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 15-10-2003 SCT (c) by SEMIKRON