2N3114 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3114 is a NPN Silicon Transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage UNITS V 150 V 5.0 V 200 mA 0.8 W 5.0 W -65 to +200 C ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=100V ICBO VCB=100V, TA=150C MAX 10 UNITS nA 10 A IEBO VEB=4.0V 100 nA BVCBO IC=100A 150 V BVCEO IC=30mA 150 V BVEBO VCE(SAT) IE=100A 5.0 Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature VBE(SAT) hFE hFE hFE fT Cob Cib IC=50mA, IB=5.0mA IC=50mA, IB=5.0mA VCE=10V, IC=0.1mA VCE=10V, IC=30mA VCE=10V, IC=30mA, TA=-55C VCE=10V, IC=30mA, f=20MHz VCB=20V, IE=0, f=140kHz VEB=0.5V, IC=0, f=140kHz VEBO IC 150 PD PD TJ, Tstg V 1.0 V 0.9 V 15 30 120 12 40 MHz 9.0 pF 80 pF R0 (4-November 2010) 2N3114 NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (4-November 2010 w w w. c e n t r a l s e m i . c o m