2N3114
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3114 is a NPN
Silicon Transistor, mounted in a hermetically sealed
package, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 150 V
Collector-Emitter Voltage VCEO 150 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 0.8 W
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=100V 10 nA
ICBO V
CB=100V, TA=150°C 10 µA
IEBO V
EB=4.0V 100 nA
BVCBO I
C=100µA 150 V
BVCEO I
C=30mA 150 V
BVEBO I
E=100µA 5.0 V
VCE(SAT) I
C=50mA, IB=5.0mA 1.0 V
VBE(SAT) I
C=50mA, IB=5.0mA 0.9 V
hFE V
CE=10V, IC=0.1mA 15
hFE V
CE=10V, IC=30mA 30 120
hFE V
CE=10V, IC=30mA, TA=–55°C 12
fT V
CE=10V, IC=30mA, f=20MHz 40 MHz
Cob V
CB=20V, IE=0, f=140kHz 9.0 pF
Cib V
EB=0.5V, IC=0, f=140kHz 80 pF
TO-39 CASE
R0 (4-November 2010)
www.centralsemi.com
2N3114
NPN SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R0 (4-November 2010
