TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
T4-LDS-0 01 1 Rev . 3 (1 01764) Page 1 of 4
DEVICES LEVELS
2N5339 2N5339U3 JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Base Current IB 1.0 Adc
Collector Current IC 5.0 Adc
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2)
@ TC = +25°C (3) – U3
PT
1.0
17.5
75
W
Operating & Storage Junction Temperature Range Top , Tstg -65 to +200 °C
Thermal Resistance, Junction-to Air RθJA 175 °C/W
NOTES:
1) Derate linearly 5.71mW/°C for TA > 25°C
2) Derate linearly 100mW/°C for TC > 25°C
3) Derate linearly 434mW/°C for TC > 25°C – U3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 50mAdc V(BR)CEO 100 Vdc
Collector-Emitter Cutoff Current
VCE = 100Vdc ICEO
100 µAdc
Collector-Emitter Cutoff Current
VCE = 90Vdc, VBE = 1.5Vdc ICEX
1.0 µAdc
Collector-Base Cutoff Current
VCB = 100Vdc ICBO 1.0 µAdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc IEBO 100 µAdc
TO-39
(TO-205AD)
U-3
(TO-276AA)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0 01 1 Rev . 3 (1 01764) Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.5Adc, VCE = 2.0Vdc
IC = 2.0Adc, VCE = 2.0Vdc
IC = 5.0Adc, VCE = 2.0Vdc
hFE
60
60
40
240
Collector-Emitter Saturation Voltage
IC = 2.0Adc, IB = 0.2Adc
IC = 5.0Adc, IB = 0.5Adc
VCE(sat)
0.7
1.2
Vdc
Base-Emitter Saturation Voltage
IC = 2.0Adc, IB = 0.2Adc
IC = 5.0Adc, IB = 0.5Adc
VBE(sat)
1.2
1.8
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio |hfe| 3.0 15
IC = 0.5Adc, VCE = 10Vdc, f = 10MHz
Output Capacitance
Cobo 250 pF
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
Cibo 1,000 pF
VBE = 2.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t ≥ 0.5s
Test 1
VCE = 2.0Vdc, IC = 5.0Adc
Test 2
VCE = 5.0Vdc, IC = 2.0Adc
Test 3
VCE = 90Vdc, IC = 55mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0 01 1 Rev . 3 (1 01764) Page 3 of 4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be
within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by
gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8. Lead designation, depending on device type, shall be as follows:
9. Lead number three is electrically connected to case.
10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
11. Symbol r applied to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions (TO-39)
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
CD .305 .355 7.75 9.02 5
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40 3
LC .200 TP 5.08 TP 6
LD .016 .021 0.41 0.53 7
LL .500 .750 12.70 19.05 7
LU .016 .019 0.41 0.48 7
L1 .050 1.27 7
L2 .250 6.35 7
TL .029 .045 0.74 1.14 3
TW .028 .034 0.71 0.86 10
P .100 2.54 5
Q .050 1.27 4
r .010 0.25 10, 11
α45° TP 45° TP 6
Notes 1, 2, 8, 9 1, 2, 8, 9
Lead number TO-39
1
2
3
Emitter
Base
Collector
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0 01 1 Rev . 3 (1 01764) Page 4 of 4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
4. Terminal 1 - collector, terminal 2 -base, terminal 3 - emitter.
FIGURE 2. Physical dimensions and configuration (U3) (SMD 5) (TO-276AA)
Dimensions
Ltr Inches Millimeters
Min Max Min Max
BL .395 .405 10.03 10.29
BW .291 .301 7.40 7.65
CH .1085 .1205 2.76 3.06
LH .010 .020 0.25 0.51
LW1 .281 .291 7.14 7.39
LW2 .090 .100 2.29 2.54
LL1 .220 .230 5.59 5.84
LL2 .115 .125 2.92 3.18
LS1 .150 BSC 3.81 BSC
LS2 .075 BSC 1.91 BSC
Q1 .030 0.762
Q2 .030 0.762
