BFQ19S Low Noise Silicon Bipolar RF Transistor * For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA * Pb-free (RoHS compliant) package * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFQ19S Marking FG Pin Configuration 1=B 2=C 3=E Package SOT89 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 120 Base current IB 12 Total power dissipation1) Ptot 1 W Junction temperature TJ 150 C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 V mA TS 85C Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1T S is 2For Value Unit 65 K/W measured on the collector lead at the soldering point to the pcb the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-03 BFQ19S Electrical Characteristics at T A = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 10 A ICBO - - 100 nA IEBO - - 100 A hFE 70 100 140 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V, pulse measured 2 2014-04-03 BFQ19S Electrical Characteristics at TA = 25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT 4 5.5 - Ccb - 1.05 1.35 Cce - 0.4 - Ceb - 3.9 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 20 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz - 1.8 - f = 1.8 GHz - 3 - IC = 70 mA, VCE = 8 V, ZS = ZSopt, Z L = ZLopt, f = 900 MHz - 11.5 - f = 1.8 GHz - 7 - Power gain, maximum available1) Gma |S21e|2 Transducer gain dB IC = 30 mA, VCE = 8 V, ZS = Z L = 50, f = 900 MHz - 9.5 - f = 1.8 GHz - 4 - IP3 - 32 - P-1dB - 22 - Third order intercept point at output2) dBm VCE = 8 V, IC = 70 mA, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz 1dB Compression point VCE = 8 V, IC = 70 mA, ZS = ZSopt , ZL = ZLopt, f = 1.8 GHz 2 1/2 ma = |S21 /S12| (k-(k -1) ) 1G 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.2 MHz to 12 GHz 3 2014-04-03 BFQ19S Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 2 1200 mW 1000 K/W RthJS Ptot 900 800 700 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 10 0 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = (tp ) P totmax/PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2014-04-03 BFQ19S SPICE GP model For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. 5 2014-04-03 Package SOT89 6 BFQ19S 2014-04-03 BFQ19S Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2014-04-03