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1
BFQ19S
1
2
2
3
Low Noise Silicon Bipolar RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFQ19S FG 1 = B 2 = C 3 = E SOT89
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 3
Collector current IC120 mA
Base current IB12
Total power dissipation1)
TS ≤ 85°C
Ptot 1 W
Junction temperature TJ150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature TSt
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 65 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFQ19S
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 15 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 2 V, IC = 0
IEBO - - 100 µA
DC current gain
IC = 70 mA, VCE = 8 V, pulse measured
hFE 70 100 140 -
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BFQ19S
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 70 mA, VCE = 8 V, f = 500 MHz
fT4 5.5 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 1.05 1.35 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.4 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 3.9 -
Minimum noise figure
IC = 20 mA, VCE = 6 V, ZS = ZSopt,
f = 900 MHz
f = 1.8 GHz
NFmin
-
-
1.8
3
-
-
dB
Power gain, maximum available1)
IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
11.5
7
-
-
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
9.5
4
-
-
dB
Third order intercept point at output2)
VCE = 8 V, IC = 70 mA, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
IP3- 32 - dBm
1dB Compression point
VCE = 8 V, IC = 70 mA, ZS = ZSopt , ZL = ZLopt,
f = 1.8 GHz
P-1dB - 22 -
1Gma = |S21/S12| (k-(k2-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
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BFQ19S
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
100
200
300
400
500
600
700
800
900
1000
mW
1200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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BFQ19S
SPICE GP model
For the SPICE model as well as for S-parameters (including noise parameters)
please refer to our internet website www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design.
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BFQ19S
Package SOT89
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BFQ19S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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