fiAMOSPEC HIGH-POWER NPN SILICON TRANSISTOR ... for use as an output device in complementary audio amplifiers NPN to 100-Watts music power per channel. MJ802 FEATURES * Continuous Collector Current- |,= 30A * High DC Current Gain- hFE=25-100@I,= 7.5A * Excellent Safe Operating Area Veg{say=0-8V(Max)@1,=7.5A,i,= 750mA 30 AMPERE * Complement to the PNP MJ4502 POWER TRANSISTOR NPN SILICON 100 VOLTS MAXIMUM RATINGS 200 WATTS Characteristic Symbol Rating Unit Collector-Base Voltage Veso 100 Vv Collector-Emitter Voltage Voer 100 Vv Collector-Emitter Voltage VeEo 90 Vv Emitter-Base Voltage Vepo 4.0 Vv Collector Current - Continuous le 30 A Base Current-Continuous lp 75 A Total Power Dissipation @T,=25C Pp 200 Ww Derate above 25C 1.14 WPC Operating and Storage Junction Ty :Tst Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Reje 0.875 C PIN 1.BASE 2.EMITTER COLLECTOR(CASE) FIGURE -1 POWER DERATING 200 DIM MILLIMETERS @ MIN. | MAX 175 g A 38.75 | 39.96 = 150 B | 1928 | 2223 2 125 c | 796 | 928 < D | 14.18 | 1219 g 100 E | 25.20 | 2667 ao 5 F 0.92 | 1.09 i G 138 | 1.62 = 0 H | 2990 | 3040 ~ 2 I 16.64 | 17.30 2 J 3.88 436 0 0 3B 5S 7% 100 12 150 175 200 K 10.67 | 11.18 To , TEMPERATURE(*C)MJ802 NPN ELECTRICAL CHARACTERISTICS ( T,, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) Vv Vv (Ig= 200 mA, 1,=0) CRO (sus) 90 Collector-Emitter Breakdown Voltage(1) BV cer Vv (I,= 200 mA, Rge= 100 ohm ) 100 Collector Cutoff Current leso mA (Vog 100 V, I-=0) 1.0 (Ven? 100 V, I-= 0 ,T.=150C) 5.0 Emitter Cutoff Current leo mA (Vpe= 4.0 V, |= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (ig= 7.5 A.Veg= 2.0 V) 25 100 Collector-Emitter Saturation Voltage VE (sat) V (le= 7.5 A, 1,=0.75 A) 0.8 Base-Emitter Saturation Voltage VeE(sat) Vv (I,= 7.5A, I,= 0.75 A) 1.3 Base-Emitter On Voltage Veejon) Vv (lp= 7.5 A,Vog= 2.0 V) 1.3 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fy; MHz (loz 1.0 A,Vog= 10 V,f = 1.0 MHz) 2.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0%MJ802 NPN aa DC CURRENT GAIN "ON" VOLTAGE 2.0 Z 16 FE ai a a 12 3 = i 8 N 5 08 Vee (set) Bl cla=10 3 3 & 5 z ce2V z Data shownis obtained from pulse tests 04 and adjusted to nullify effect of | cao . Vececeat) @ lclla#10 0 0.05 0.4 02 05 1 2 5 40 20 30 0.03 0.05 = 0.4 0.2 05 1 2 10 20 30 le , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) --- Bondng Wre Limit Second Breakdown Linit --+ Thermally Limited T,=25C Puse Duty Cycle <10% le , COLLECTOR CURRENT (Amp) 4 2 5 10 20 50 100 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) The safe Operating Area Curves indicate Ic-Vce limits below which the device will not enter secondary break- down .Collector load fines for specific circuits must fall within the applicable Safe Area to avoid causing a cata- strophic failure. To insure operating below the maximum Ty , power-temperature derating must be observed for both steady state and pulse power conditions.