LITE-ON SEMICONDUCTOR MBR1670CT thru 16100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 16 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications B L M C D A K E PIN 1 2 DIM. A B C D 3 F MECHANICAL DATA Case : TO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) N H H 8.26 F 12.70 6.35 14.73 2.29 0.51 0.30 3.53 3.56 2.79 1.14 0.64 4.09 4.83 L M PIN 1 1.14 1.40 2.92 2.03 N All Dimensions in millimeter PIN 2 CASE PIN 3 3.43 E I J K J 2.54 5.84 6.86 9.28 G H G I TO-220AB MAX. MIN. 14.22 15.88 9.65 10.67 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward RectifiedCurrent at TC=100 C (See Fig.1) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load MBR1680CT MBR1690CT MBR16100CT UNIT VRRM VRMS VDC 70 80 90 100 49 70 56 80 63 90 70 100 V V V I(AV) 16 A IFSM 125 A dv/dt 10000 V/us VF 0.85 0.75 0.95 0.85 V @TJ =25 C @TJ =125 C IR 0.1 100 mA CJ 275 pF R0JC TJ TSTG 2.0 -55 to +150 -55 to +175 C/W C C @IF=8A @IF=8A @IF=16A @IF=16A Maximum DC Reverse Current at Rated DC Blocking Voltage MBR1670CT TJ =25 C TJ =125 C TJ =25 C TJ =125 C Voltage Rate of Change (Rated VR) Maximum Forward Voltage, (Note 1) SYMBOL Typical Junction Capacitance, per element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. REV. 1, Aug-2007, KTHC14 RATING AND CHARACTERISTIC CURVES MBR1670CT thru MBR16100CT 16 12 8 4 RESISTIVE OR INDUCTIVE LOAD 0 20 40 60 80 100 120 140 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 20 150 125 100 160 75 50 25 8.3ms Single Half-Sine-Wave 0 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 TJ = 125 C 1.0 0.1 TJ = 75 C 0.01 TJ = 25 C 0.001 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 100 TJ = 25 C, f= 1MHz 10 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS 1000 CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0