2N4060-2N4227 Numerical Index aie MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS Sit = = = hes GE | oe) REPLACE. | PAGE Po |B] Ty | Ves | Vee |= hre @ le Veeisan @ Ic 2) _ le TYPE ETS] ment | numper | USE 5 gy AN eel Bl Tal =la @ 25C} S| C | (volts) | (volts) |S | (min) (max) >] (volts) 5 3 5/3 2N4.060 S|] P| Mps6516/ 5-113 AFC] 0.25W] A] 150 30 30] 0 45} 165 1.0M 0.7 10M 45|/E 2N4061 S]) Py) MPS6517) 5-113 AFC] 0.25W) AJ] 150 30 30] 0 90) 330 1.0M 0.7 LOM S90, E 2N4062 S| P| MPS6518] 5-113 AFC] 0.25W] A] 150 30 30] O} 180] 660 1.0M 0.7 10M 180] EF 2N4063 S| N LPA 10W|] C] 200 450 350] 0 40] 160] 0.024 15M] E 2N4064 S| N LPA low] C} 200 300 250] 0 407 160} 0.024 15M] E BN Oe Field Effect Transistors, see Table on Page 1-166 2N4068 S|] N RFA 500M] A] 175 150 150] 0 30 30M 50M] T 2N4069 S| N LPA L.OW}] C] 175 150 150] 0 30 0.034 0.68 50M} T 2N4070 S| N 2N3448] 7-111 LPA 11l5w}] C] 200 100 80] 0 40] 120 5.0A L.5 0A 40], E 10M] 2N407 2 S|] N 9-112 HPA 1.5Wy] Cc} 200 40 20) 0 Lo 254 550M) T 2N4073 S| N 9-112 HPA 1.5W] Cc} 200 40 20} 0 10 25A 550M] T 2N4074 S| N RFA 400M) A} 175 40 40] 0 400] E 2N4075 S|] N 2N3764} 8-273 LPA 30W1 C{ 200 80; 0 30 90 30M | T 2N4076 S| N LPA 30W{ C} 200 80] 0 50] 150 30M} 2N4.080 S| P HPA 300M} A} 200 20 157 0 20 3. 0M 1.06] T 2N4082 thru Field Effect Transistors, see Table on Page 1-166 2N4085 2N4086 S| N] Mps6514] 5-109 AFA 200M] A 12 12] Of 150] 300 2.0M 150] E 2N4087 S| Ni} MPS6515] 5-109 AFA 200M] A 12 12] O} 250) 500 2,.0M 2507 E 2N4087A| S| N] MPS6515] 5-109 AFC 200M] A 12 12] OF} 250] 500 2.0M 250] FE 2N4088 thru Field Effect Transistors, see Table on Page 1-166 2N4095 2N4096 thru Thyristors, see Table on Page 1-154 2N4098 2N4099 S| N DFA 300M| A| 200 55 55] 0} 175 1.0M 150M} T 2N4 100 S| N DFA 400M| A} 200 55 55] O] 175 1.0M 150M} T 2N4101 thru Thyristors, see Table on Page 1-154 2N4103 2N4104 s| | | | Kral 300M| A| 175 60 60] 0 1400} E | 540M] T 2N4106 Gl P MP2060] 7-220 AFA L.6WEA 25 70| 350 5.0M 2N4108 thru Thyristors, see Table on Page 1-154 2Nn4110 2N4111 S| XN LPA 30W] C 100 60| 0 40] 120 2.04 70M; T 2N4112 S| N LPA 30W] C 100 60] O} 100] 300 2.0A 80M | T 2N4113 S| N LPA 30W] C 120 804 0 40] 120 2.04 70M | T 2N4114 S} N LPA 3.0W] A 120 80} O}] 100} 300 2.0A 80M] E 2N4115 S| N LPA 37W) C 120 80] 0 40] 120 2.0A 70M] E 2N4116 S| N LPA 37W 1 C 120 80] 0} 100) 300 2.04 80M] E 2N4117,A thru Field Effect Transistors, see Table on Page 1-166 2N4120A 2N4121 S| P 2N3905 | 5-16 RFA 200Mj, A| 125 40 40] 0 70 LOM 50] E 400M} T 2N4122 S| P 2N3906 | 5-16 RFA 200M] A} 125 40 40; O| 150 LOM 150] E 450M| T 2N4123 Sj N 5-21 HSA 310M} A] 135 40 30] 0 50} 150 2.0M 0.3 SOM 50] E 250M] T 2N4124 S|] N 5-21 HSA 310M} A] 135 30 254 0] 120] 360 2.0M 0.3 50M 120] E 300M] T 2N4125 St P 5-25 HSA 310M] A] 135 30 304 0 50} 150 2.0M 0.4 50M 50] E 200M] T 2N4126 Ss} P 5-25 HSA 310M} A] 135 25 25} O| 120] 360 2.0M 0.4 50M 120] E 250M] T 2N4127 S| N LPA 25Wi C 60 401 0 10 80 0.2A 300M | T 2N4128 S| N LPA 40W| C 60 40] 0 LO 80 0.2A 200M] T 2N4130 S| N LPA 120W] C 80 65] 0 10 60 2.0A 1,.25M] E 2N4131 S| N LPA 60W] C 90 80] 0 10 80 1,0A 150M} E 2N4134 S| N RFA 200M] A} 200 30 30] 0 200] E 350M] T 2N4135 SIN RFA 200M} A] 200 3 30] 0 200] E 425M/ T 2N4136 Pair of 2N2430 and 2N2431 2N4137 S| N PMS 360M} A] 200 40 40] 0 40] 120 LOM 500M{ T 2N4138 S| N CHP 300M] Ay 200 30 30] 0 50 1.0M 20M) T 2N4139 2N4140 SiN 2N4400] 5-34 RFA 300M} A] 125 60 30} 0 120 150M 250M} T 2N4141 S|] N 2N4401 } 5-34 RFA 300M} A} 125 60 30}; 0 300 150M 250M} T 2N4142 St P 2N4402 | 5-39 RFA 300M] Af 125 60 40] 0 120 150M 200M} T 2N4143 S} P 2N4403 | 5-39 RFA 300M] AJ 125 60 40] 0 300 L50M 200M | T 2N4144 thru Thyristors, sce Table on Page 1-154 284149 2na150 | s| n| | cea| swlc 100} so} of 4o] i120] 5.0 15M} T 2N4151 thru Thyristors, see Table on Page 1-154 2N4 204 2N4207 S|] P HSS 300M} A] 200 6.0 6.0] 0 50] 120 10M 650M) T 2N4208 S| P HSS 300M] Aq 200 12 12) 0 30] 120 10M 700M] T 2N4209 S| P HSS 300M} Aj 200 15 15] 0 50} 120 LOM 850M] T 2N4210 Sy N TPA LOOW | C 80 60] 0 20) 100 10A 10M} T 2N4211 S| N LPA 100W} C 100 80] 0 20] 100 1OA 10M! T 2N4212 thru Thyristors, see Table on Page 1-154 2N4216 i i i 1 ' ' 2N4220,A thru Field Effect Transistors, see Table on Page 1-166 2N4.224 2N4225 S|] N LPA 5.0W] Cc 100 40] 0 40] 150 1.0A 150M] T 2N4226 Ss; N LPA 5.0W} C 200 60] 0 40] 150 1.0A 150M} T 2N4227 S| N 2N4400 | 5-34 MSA 300M] A] 125 60 30; 0 150 150M 250M} T 1-146mumerical index 2N3459- 2N4338 FIELD-EFFECT TRANSISTORS INDEX (continued) = loss \ Breakdown Vis NF @ f TYPE = PAGE Inco" Voltage Css a8 te NOTE = | NUMBER | Min Max Vier: | Sub- Min Max pv = mA mA nA Volts | script | mhos | 2mhos BF) Az |> _ i 2N3459 | N 0.8 | 4.0 0.25] 50 | dco | i500 | 6000 | 18 | 4.0 2N3460 | N 0.2 | 1.0 0.25] 50 } DEO 800 | 4500 | 18 | 4.0 2N3465 | N 1.0 | 5.0 i.0| 40 | Deo 400 | 1200 | 15 | 5.0 2N3466 | N 1.0 | 5.0 1.0| 40 | aco 400 | 1200 | 15 | 5.0 2N3573 | P 0.02 | 0.1 0.6] 25 | GSS 100 300 | 6.0 } 3.0 2N3574 | P 0.075 (0.375 0.6| 25 | ess 200 600 | 6.0 | 3.0 2N3575 | P 0.2 | 1.0 0.6| 25 | Gss 300 900 | 6.0 | 3.0 2N3578 | P 0.9 | 4.5 15] 20 | ess | 1200 | 3500 | 65 2N3631 | N 2.0 10 20 | psx | 1400 ] 2800 | 7.5 2N3684 | N 2.5 | 7.5 0.1] 50 | GS 2000 | 3000 | 4.0 | 0.5 2N3685 | N 1.0 | 3.0 0.1} 50 | GS 1500 | 2500 14.0 } 0.5 2N3686 | N 0.4 | 1.2 o.1| 50 | s 1090 | 2000 | 4.0 | 0.5 2N3687 | N 0.1 | 0.5 0:1| 50 | Gs 500 | 1500 | 4:0 ).15* 2N3695 | P 1.25 | 3.75 0:1| 30 | es 1000 | 1750 15.0 | 0.2% 2N3696 | P 0.5 | 1.5 0.1] 30 | Gs 750 | 1250 | 5.0 | 0.2% 2N3697 | P 0.2 | 0.6 0:1} 30 | Gs 500 | 1000 | 5.0 | 0.2% 2n3698 | P 0.05 | 0.25 0.1) 30 | Gs 250 750 | 5.0 | 0.2% 2N3796 | N | 10-4 0.5 | 3.0 | 0.001] 25 | Dsx 900 | 1800 | 6.0 | 4.0 2n3797 | N | 10-4 2.0 | 6.0 | oloa1| 20 {| osx | 1500 | 3000 | 8.0 | 4.0 2N3819 | N 2.0 20 2.0] 25 | ess | 2000 | 6500 | 8.0 2N3820 | P 0.3 15 20; 20 | Gss 800 | 5000 | 32 2N3821 |N | 10-8 0.5 | 2.5 0.1] 50 | ess | 1500 | 4500 | 6.0 | 5.0 10 4H 2N3822 | N } 10-8 2.0 | 10 0.1] 50 | Gss | 3000 } 6500 | 6.0 | 5.0 10 4H 2N3823 |N | 10-10 | 4.0 20 0.5] 30 | pcs | 3500 | 6500 | 6.0 | 2.5 100 M 2n3824 |N | 10-8 0.11 50 | Gss 6.0 2n3882 | P 0.25 0.1) 30 | DS rooo | 2400 | 4.0 | 3.0 2n3909 | P 0.3 15 io| 20 | pes | 1000 | 5000 | 32 2N3921 | N 1.0 10 0.25] 50 |ss | 1500 | 7500 | 18 | 2.0 1.0 K} Dual 2N3922 | N 1.0 10 0:25| 50 | ess | 1500 | 7500 | 18 | 2.0 1.0 K| Dual 2N3934 | N 0.25 | 1.3 0.1] 50 | Gss 300 900 | 7.0 | 2.0 100 Hj] Dual 2N3935 | N 0.25 | 1.3 0.1{ 50 | ess 300 900 | 7.0 | 2.0 100 H]} Dual 2N3954 | N 0.5 | 5.0 0.1) 50 | Gss } 1000 4.0 ) 0.5 100 H]} Dual 2N3955 | WN 0.5 | 5.0 0.1/ 50 | Gss | 1000 4.0 | 0.5 100 #| Dual 2n3956 | N 0.5 | 5.0 0.1] 50 | Gss | 1000 4.0 | 0.5 100 H]| Duai 2N3957 | N 0.5 | 5.0 0:1] 50 | Gss | 1000 4.0 | 0.5 100 H| Dual 2N3953 | N 0.5 | 5.0 0:1] 50 | Gss | 1000 4.0 | 0.5 100 H| Dual 2n3966 =| N 2.0 0.1] 30 | DGS 6.0 2N3967,) N 2.5 10 0.1} 30 ) DGS } 1600 } 2400 | 5.0 2N3968 | N 1.0 | 5.0 0.1] 30 | pes | 1400 | 2000 | 5.0 2N3969 | N 0.4 | 2.0 o.1{| 30 | des 950 | 1450 | 5.0 2N3970 | N 50 | 150 | 0.25*| 40 | pGs 25 2N3971 | N 25 75 (0.25*| 40 | pes 25 2N3972 | N 5.0 30 | 0.25*| 40 | pes 25 2n3993 | P i0 1.2*| 25 | ess | 6000 | 12000 | 16 2n3994 | P 2.0 1.2*| 25 | ess | 4000 | 10000 | 16 2N4065 | P 0.005 0.0025] 25 | css 4.5 IN4066 | P 0.0025 | 25 | Gss 7.0 2N4082 | N 0.25 | 1.3 d.1| 50 300 7.0 Dual 2n4083 | N 0.25 | 1.3 0.1] 50 300 7.0 Dual 2N4084 | N 1.0 10 0.25| 50 1500 18 Dual 2n4085 | N 1,0 10 0.25] 50 1500 18 Dual 2N4091 | N 30 0.2*| 40 | pGo 16 2N4092 | N 15 0.2*} 40 | DGO 16 2N4093 | N 8.0 0.2*| 40 | Dco 16 2N4117 | N 0.03 | 0.09 0.01] 40 | css 70 210 | 3.0 2QN4117A | N 0.03 | 0.09 | 0.001| 40 | pco 3.0 2nall8 | N 0.08 | 0.24 0.01] 40 | css 80 250 | 3.0 2N4118A | N 0.08 | 0.24 | 0.001] 40 | pco 3.0 2N4119 | N 0.2 | 0.6 6.01) 40 | GSS 100 330 | 3.0 2N4119A | N 0.2 | 0.6 | 0.001] 40 | pco 3.0 2N4139 | N 8.0 il 1.0} 50 | DcO is 2na220 | Nn | 10-11 | 0.5 | 3.0 0:1] 30 | GSS | 1000 | 4000 | 6.0 2n4220A | N | 10-11 | 0.5 | 3.0 0.1| 30 | ess | 1000 | 4000 | 6.0 | 2.5 1.0 H 2N4221 | nw | 10-11 | 2.0 | 6.0 0.1] 30 | ess | 2000 | 5000 | 6.0 2N4221a | N | 10-11 | 2.0 | 6.0 0.1] 30 | ess { 2000 {| 5000 | 6.0 | 2.5 1.0 H 2n4222 |n | 10-11 | 5.0 15 0.1| 30 | ess | 2500 | 6000 | 6.0 2N42228 |N | 10-11 | 5.0 15 0.1} 30 | ess | 2500 | 6000 | 6.0 | 2.5 1.0 H 2n4223. | N | 10-15 | 3.0 18 0.25| 30 | ess | 3000 | 7000 | 6.0 | 5.0 200 M 2n4224 |N | 10-15 | 2.0 20 0.5| 30 | Gss | 2000 | 7500 | 6.0 2N4267 | P 0.001 | 0.005} 30 | css 15 2N4268 | P 0/001 | 0.005] 30 | ass 15 2N4302 | N 5.0 1.0] 30 | DGO 6.0 2N4303 | N 10 1.0] 30 | pGo 6.0 2N4304 | N 15 1:0] 30 | peo 6.0 2n4338 | N 0.2 | 0.6 0.1{ 50 | DGO 6.0 1-168Field-Effect Transistors FIELD-EFFECT TRANSISTOR APPLICATIONS SELECTOR GUIDE GENERAL PURPOSE AMPLIFIERS AND SWITCHES Construction] Type No. Polarity Inss Operatins Comments MOS 2N3796 N 0 mA to 5.0 mA B 2N3797 MFE3001 JFET 2N3821* N 0 mA to 5.0 mA A Drain and Source interchangeable 2N3822* 5.0 mA to 10 mA 2N4220 0 mA to 5.0 mA 2N4220A* 0 mA to 5.0 mA 2N4221 5.0 mA to 10 mA 2N4221A* 5.0 mA to 10 mA 2N4222 10 mA to 20 mA 2N4222A* 10 mA to 20 mA 3N124 N OmAto 5.0 mA A Gate 1 and Gate 2 terminals externally 3N125 0 mA to 5.0 mA y accessible ' 3N126 5.0 mA to 10 mA MFE2093 N 0 mA to 5.0 mA A Drain and Source interchangeable MFE2094 ' y MFE2095 MFE2097 N 20 mA to 100 mA A MFE2098 N 20 mA to 100 mA A MFE4001* P 0 mA to 5.0 mA A MFE4002* 5.0 mA to 10 mA MFE4003* 10 mA to 20 mA MFE4004* 0 mA to 5.0 mA MFE4005* 5.0 mA to 10 mA MFE4006* 10 mA to 20 mA MPF103 N 0 mA to 5.0 mA A Drain and Source interchangeable MPF104 \ 5.0 mA to 10 mA y MPF105 10 mA to 20 mA MPFi51* P 0 mA to 5.0 mA A Drain and Source interchangeable MPF152* 5.0 mA to 10 mA MPF153* 10 mA to 20 mA MPF154* 0 mA to 5,0 mA MPF155* 5.0 mA to 10 mA MPF156* 10 mA to 20 mA *Noise Figure guaranteed at low frequency for audio applications. CHOPPERS AND SWITCHES uati wi Operating Construction Type No. Polarity Ings Mode t Comments MOS 2N4351 N . c Complementar 2N4352 - Cc omp y MFE3002 N - C Complementary; Drain and Source MFE3003 P - Cc interchangeable MPF159 N - Cc Complementary; Drain and Source MPF160 Pp - Cc interchangeable JFET 2N3824 N - A Drain and Source interchangeable MFE2133 N - A VHF RF AMPLIFIERS AND MIXERS ee ae Operating Construction Type No. Polarity Ibgs Mode t Comments MOS MFE3004 N 5.0 mA to 10 mA B MFE3005 5.0 mA to 10 mA B MPF157 N 5.0 mA to 10 mA B MPF158 N 5.0 mA to 10 mA B JFET 2N3823 N 10 mA to 20 mA A Drain and Source interchangeable 2N4223 ' 2N4224 2N4416 N 10 mA to 20 mA A MFE2000 N 5.0 mA to 10 mA A MFE2001 N 10 mA to 20 mA MFE2002 P 10 mA to 20 mA MPF102 N 10 mA to 20 mA A Drain and Source interchangeable MPF106 5.0 mA to 10 mA MPF107 10 mA to 20 mA tA = Depletion Mode, B = Depletion-Enhancement Mode, C = Enhancement Mode 10-3 QU MW (WWField-Effect Transistors 2N4223 (SILICON) 18 = ce. Silicon N-channel junction field-effect transistors, designed for VHF amplifier and mixer applications. Drain and Source interchangeable. CASE 20(3) (TO-72) MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Rating Symbol Value Unit Drain-Source Voltage Vos 30 Vdc Drain-Gate Voltage Vog 30 Vde Gate-Source Voltage Vos -30 Vdc Drain Current ny 20 mAdc Power Dissipation Pn 300 mW Derate above 25C 2 mw/C Operating Junction Temperature Ty 175 c Storage Temperature Range T ote -65 to +200 c FIGURE 1 NOISE FIGURE AND POWER GAIN TEST CIRCUIT 2N4223 2.8 pF RL= 50 Rs = 500 ATF a ye S s =n 4 ->+= = a ~ > tt FLT J = | ) Lg whe Fy, FE 1-10 pF = 1-10 of BE f Li 001 jaF = FFA 4f 10. pF ype tio tr" US L ok Le 3 RFC = 0.47 ul Ly = IY TURNS #20 TINNED WIRE, %4" ID, LENGTH 3 Ly = 342 TURNS #18 TINNED WIRE; % ID, LENGTH = 14, TAPPED AT 1% TURNS FROM DRAIN 001 pF Tt are a +15 Vde 10-15Field-Effect Transistors 2N4223, 2N4224 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) | Characteristic Symbol | Min Max | Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage Vv Vde _ _ (BR)GSS _ (lg =-10 wAdc, Vyyg = 0) -30 Gate Reverse Current Toss nAdc Vas =-20 Vde, Ving = 0) 2N4223 - -0.25 2N4224 - -0.50 (Vag =-20 Vde, Vig = 0, T, = 100C) 2N4223 - -250 Gs DS A 2N4224 - -500 Gate-Source Cutoff Voltage Vas(ott) Vde (1, = 0.25 nAdc, Vy, = 15 Vdc) 2N4223 - -8 D DS lp = 0.50 nAdc, Vpg = 15 Vdc) 2N4224 - -8 Gate-Source Voltage Vos Vde (i, = 0.38 mAdc, V,. = 15 Vdc) 2N4223 -1.0 -1.0 D DS Mp = 0.2 mAdc, Vos = 15 Vde) 2N4224 -1.0 ~1.5 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current* Ibgg* mAdc Wps = 15 Vdc, Vog= 0) 2N4223 3 18 2N4224 2 20 DYNAMIC CHARACTERISTICS Forward Transfer Admittance ee | umhos Vog = 15 Vde, Vag = 0, f = 1 kHz)* 2N4223 3000 7000 2N4224 2000 7500 (Vo = 15 Vdc, V.. = 0, f = 200 MHz) 2N4223 2700 - DS Gs 24224 1700 - Input Conductance Rely, ,) jamhos Ws = 15 Vde, Vag = 0, f = 200 MHz) - 800 Output Conductance Re(y,.) umhos Wg = 15 Vdc, Vag = 0, f = 200 MHz) - 200 Input Capacitance iss pF Wos = 15 Vdc, Vos= 0, f = 1 MHz) - 6 Reverse Transfer Capacitance Cuss pF Vos = 15 Vde, Vig = 0, f = 1 MHz) - 2 Noise Figure NF dB Wg = 15 Vde, Vag = 0, Rg=1k ohm, f = 200 MHz) 2N4223 - 5 Small-Signal Power Gain G dB (Vg = 15 Ve, Vag = 9, f = 200 MHz) 2N4223 ps 10 - *Pulse Test: Pulse Width 5 630 ms, Duty Cycle = 10% FIGURE 3 COMMON SOURCE FIGURE 2 TYPICAL DRAIN CHARACTERISTICS TRANSFER CHARACTERISTICS 7 Vos = 15 Vee Ip, DRAIN CURRENT (mA) Ip, DRAIN CURRENT (mA) re w 0 0 ) 0 5 10 15 20 25 5 4 3 =2 =I Vos, DRAIN-SOURCE VOLTAGE (VOLTS) Vs, GATE-SOURCE VOLTAGE (VOLTS) 10-16Field-Effect Transistors 2N4223, 2N4224 (continued) FIGURE 4 INPUT IMPEDANCE FIGURE 5 REVERSE TRANSFER ADMITTANCE 10 3 \. I ! Ves = 0 To = 25C 8 3 i 2 E 5 z 3 2 Y 4 z \ a e 2 A La] Lp +17 a 1 aera A 30 50 70 100 200 300 30 50 70 100 200 300 f, FREQUENCY (MHz) f, FREQUENCY (MHz) FIGURE 6 FORWARD TRANSFER ADMITTANCE FIGURE 7 OUTPUT ADMITTANCE | | ToT Td] Vps = 15 Vie Vps = 15 Vide bes Ves = 0 Ves = 0 To = 25C Te = 25C \ Bis 3 / , V Yos: OUTPUT ADMITTANCE (mmhos) , J / Yt, FORWARD TRANSFER ADMITTANCE (mmhos) ny Z 1 Va a UY y = ae bp a bee J | & ] , 0 0 30 50 70 100 200 300 30 50 70 100 200 300 f, FREQUENCY (MHz) f, FREQUENCY (MHz) 10-17