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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

December 2014

4NXXM, H11B1M, TIL113M Rev. 1.0.4

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M

6-Pin DIP General Purpose Photodarlington Optocoupler

Features

■

High Sensitivity to Low Input Drive Current

■

Meets or Exceeds All JEDEC Registered

Speciﬁcations

■

Safety and Regulatory Approvals:

– UL1577, 4,170 VAC

RMS

for 1 Minute

■

DIN-EN/IEC60747-5-5, 850 V Peak Working

Insulation Voltage

Applications

■

Low Power Logic Circuits

■

Telecommunications Equipment

■

Portable Electronics

■

Solid State Relays

■

Interfacing Coupling Systems of Different Potentials

and Impedances

Description

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and

TIL113M have a gallium arsenide infrared emitter opti-

cally coupled to a silicon planar photodarlington.

Schematic

EMITTER

COLLECTOR

ANODE

CATHODE

6BASE

N/C

Figure 1. Schematic

Figure 2. Package Outlines

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.4 2

Safety and Insulation Ratings

As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit

data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Note:

1. Safety limit values – maximum values allowed in the event of a failure.

Parameter Characteristics

Installation Classiﬁcations per DIN VDE

0110/1.89 Table 1, For Rated Mains Voltage

< 150 V

RMS

I–IV

< 300 V

RMS

I–IV

Climatic Classiﬁcation 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

Input-to-Output Test Voltage, Method A, V

IORM

x 1.6 = V

Type and Sample Test with t

= 10 s, Partial Discharge < 5 pC 1360 V

peak

Input-to-Output Test Voltage, Method B, V

IORM

x 1.875 = V

100% Production Test with t

= 1 s, Partial Discharge < 5 pC 1594 V

peak

IORM

Maximum Working Insulation Voltage 850 V

peak

IOTM

Highest Allowable Over-Voltage 6000 V

peak

External Creepage

≥

7mm

External Clearance

≥

7mm

External Clearance (for Option TV, 0.4" Lead Spacing)

≥

10 mm

DTI Distance Through Insulation (Insulation Thickness)

≥

0.5 mm

Case Temperature

(1)

175 °C

S,INPUT

Input Current

(1)

350 mA

S,OUTPUT

Output Power

(1)

800 mW

Insulation Resistance at T

, V

= 500 V

(1)

> 10

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.4 3

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Unit

TOTAL DEVICE

STG

Storage Temperature -40 to +125 °C

OPR

Operating Temperature -40 to +100 °C

Junction Temperature -40 to +125

°C

SOL

Lead Solder Temperature 260 for 10 seconds °C

Total Device Power Dissipation @ T

= 25°C 270 mW

Derate Above 25°C 3.3 mW/°C

EMITTER

Continuous Forward Current 80 mA

Reverse Voltage 3 V

(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3.0 A

LED Power Dissipation @ T

= 25°C 120 mW

Derate above 25°C 2.0 mW/°C

DETECTOR

CEO

Collector-Emitter Breakdown Voltage 30 V

CBO

Collector-Base Breakdown Voltage 30 V

ECO

Emitter-Collector Breakdown Voltage 5 V

Detector Power Dissipation @ T

= 25°C 150 mW

Derate Above 25°C 2.0 mW/°C

Continuous Collector Current 150 mA

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.4 4

Electrical Characteristics

= 25°C Unless otherwise speciﬁed.

Individual Component Characteristics

Notes:

2. Indicates JEDEC registered data.

Symbol Parameter Test Conditions Device Min. Typ. Max. Unit

EMITTER

Input Forward Voltage

(2)

= 10 mA

4NXXM 1.2 1.5 V

H11B1M,

TIL113M 0.8 1.2 1.5 V

Reverse Leakage Current

(2)

= 3.0 V 4NXXM 0.001 100 µA

= 6.0 V H11B1M,

TIL113M 0.001 10 µA

C Capacitance

(2)

= 0V, f = 1.0 MHz All 150 pF

DETECTOR

CEO

Collector-Emitter Breakdown

Voltage

(2)

= 1.0 mA, I

= 0

4NXXM,

TIL113M 30 60 V

H11B1M 25 60 V

CBO

Collector-Base Breakdown

Voltage

(2)

= 100 µA, I

= 0 All 30 100 V

ECO

Emitter-Collector Breakdown

Voltage

(2)

= 100 µA, I

= 0

4NXXM 5.0 10 V

H11B1M,

TIL113M 710 V

CEO

Collector-Emitter Dark

Current

(2)

= 10 V, Base Open All 1 100 nA

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.4 5

Electrical Characteristics

(Continued)

= 25°C Unless otherwise speciﬁed.

Transfer Characteristics

Notes:

3. Indicates JEDEC registered data.

4. The current transfer ratio(I

/ I

) is the ratio of the detector collector current to the LED input current.

5. Pulse test: pulse width = 300 µs, duty cycle

≤

2.0% .

6. I

adjusted to I

= 2.0 mA and I

= 0.7 mA rms.

7. The frequency at which I

is 3 dB down from the 1 kHz value.

Isolation Characteristics

Symbol Parameter Test Conditions Device Min. Typ. Max. Unit

DC CHARACTERISTICS

C(CTR)

Collector Output

Current

(3)(4)(5)

= 10 mA, V

= 10 V,

= 0

4N32M,

4N33M 50 (500) mA (%)

4N29M,

4N30M 10 (100) mA (%)

= 1 mA, V

= 5 V H11B1M 5 (500) mA (%)

= 10 mA, V

= 1 V TIL113M 30 (300) mA (%)

CE(SAT)

Saturation Voltage

(3)(5)

= 8 mA, IC = 2.0 mA 4NXXM 1.0 V

TIL113M 1.25 V

IF = 1 mA, IC = 1 mA H11B1M 1.0 V

AC CHARACTERISTICS

ton Turn-on Time

IF = 200 mA, IC = 50 mA,

VCC = 10 V, RL = 100 Ω

4NXXM,

TIL113M 5.0 µs

IF = 10 mA, VCE = 10 V,

RL = 100 ΩH11B1M 25 µs

toff

Turn-off Time

IF = 200 mA, IC = 50 mA,

VCC = 10 V, RL = 100 Ω

4N32M,

4N33M,

TIL113M

100 µs

4N29M,

4N30M 40 µs

IF = 10 mA, VCE = 10 V,

RL = 100 ΩH11B1M 18 µs

BW Bandwidth(6)(7) 30 kHz

Symbol Characteristic Test Conditions Min. Typ. Max. Unit

VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS

CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF

RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.4 6

Typical Performance Curves

Figure 4. Normalized CTR vs. Forward Current

IF - FORWARD CURRENT (mA)

0 2 4 6 8 10 12 14 16 18 20

NORMALIZED CTR

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VCE = 5.0 V

TA = 25°C

Normalized to

IF = 10 mA

Figure 5. Normalized CTR vs. Ambient Temperature

TA - AMBIENT TEMPERATURE (°C)

-60 -40 -20 0 20 40 60 80 100

NORMALIZED CTR

0.2

0.4

0.6

0.8

1.0

1.2

1.4

IF = 5 mA

IF = 10 mA

IF = 20 mA

Normalized to

IF = 10 mA

TA = 25°C

IF - LED FORWARD CURRENT (mA)

VF - FORWARD VOLTAGE (V)

Figure 3. LED Forward Voltage vs. Forward Current

1 10 100

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

TA = 25°C

TA = -55°C

TA = 100°C

Figure 7. CTR vs. RBE (Saturated)

RBE- BASE RESISTANCE (k Ω)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

IF = 20 mA

IF = 10 mA

IF = 5 mA

VCE= 0.3 V

Figure 6.

CTR vs. RBE (Unsaturated)

RBE- BASE RESISTANCE (kΩ)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VCE= 5.0 V

IF = 20 mA

IF = 10 mA

IF = 5 mA

0.01 0.1 1 10

0.001

0.01

0.1

100

= 5 mA

= 20 mA

= 10 mA

Figure 8. Collector-Emitter Saturation Voltage

vs. Collector Current

IC - COLLECTOR CURRENT (mA)

VCE (SAT) - COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

= 2.5 mA

= 25

˚C

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.4 7

Typical Performance Curves (Continued)

Switching Time Test Circuit and Waveform

Figure 13. Switching Time Test Circuit and Waveform

NORMALIZED ton - (ton(R

) / ton(open))

Figure 10. Normalized ton vs. RBE

RBE- BASE RESISTANCE (kΩ)

10 100 1000 10000 100000

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VCC = 10 V

IC = 2 mA

RL = 100 Ω

SWITCHING SPEED (μs)

Figure 9. Switching Speed vs. Load Resistor

R-LOAD RESISTOR (kΩ)

0.1 1 10 100

0.1

100

1000

Toff

IF = 10 mA

VCC = 10 V

TA = 25°C

Ton

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

VCC = 10 V

IC = 2 mA

RL = 100 Ω

NORMALIZED toff - (toff(R

) / toff(open))

10 100 1000 10000 100000

RBE- BASE RESISTANCE (kΩ)

Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature

TA - AMBIENT TEMPERATURE

(°C)

0 20 40 60 80 100

ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)

0.001

0.01

0.1

100

1000

10000

= 10 V

= 25°

OUTPUT PULSE

INPUT PULSE

trtf

INPUT

IF RL

RBE

VCC = 10 V

OUTPUT

ton

10%

90%

toff

Adjust IF to produce IC = 2 mA

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.4 8

Reflow Profile

Figure 14. Reﬂow Proﬁle

300

280

260

240

220

200

180

160

140

120

100

°C

Time (s)

0 60 180120 270

260°C

> 245°C = 42 s

Time above

183°C = 90 s

360

1.822°C/s Ramp-up rate

33 s

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.4 9

Ordering Information

Note:

8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M,

and TIL113M devices.

Marking Information

Figure 15. Top Mark

Table 1. Top Mark Deﬁnitions

Part Number Package Packing Method

4N29M DIP 6-Pin Tube (50 Units)

4N29SM SMT 6-Pin (Lead Bend) Tube (50 Units)

4N29SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)

4N29VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)

4N29SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)

4N29SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)

4N29TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)

1 Fairchild Logo

2 Device Number

3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)

4 One-Digit Year Code, e.g., “4”

5 Digit Work Week, Ranging from “01” to “53”

6 Assembly Package Code

4N29

V X YY Q

43 5

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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