© 2003 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC= 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES TJ = 25°C50µA
VGE = 0 V TJ = 150°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= 30 A, VGE = 15 V TJ = 25°C 1.7 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C40A
ICM TC= 25°C, 1 ms 200 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 80 A
(RBSOA) Clamped inductive load @ ≤ 600 V
PCTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque (M3) 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 SMD 4 g
DS99109(10/03)
TO-268
(IXGT)
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD
(IXGH)
EC (TAB)
Features
zMedium frequency IGBT
zSquare RBSOA
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
Applications
zPFC circuits
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zAC motor speed control
zDC servo and robot drives
zDC choppers
VCES = 600 V
IC25 = 75 A
VCE(sat) < 1.7 V
tfi typ = 82 ns
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
G
IXGH 40N60B2D1
IXGT 40N60B2D1
Preliminary Data Sheet
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 40N60B2D1
IXGT 40N60B2D1
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 30 A; VCE = 10 V, 20 36 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 2560 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 210 pF
Cres 54 pF
Qg100 nC
Qge IC = 30 A, VGE = 15 V, VCE = 300 V 15 nC
Qgc 36 nC
td(on) 18 ns
tri 20 ns
td(off) 130 200 ns
tfi 82 150 ns
Eoff 0.4 0.8 mJ
td(on) 18 ns
tri 20 ns
Eon 0.3 mJ
td(off) 240 ns
tfi 150 ns
Eoff 1.10 mJ
RthJC 0.42 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3 Ω
Inductive load, TJ = 125°°
°°
°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-268 Outline
Min. Recommended Footprint
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF= 30 A, VGE = 0 V, Pulse test TJ =150°C 1.6 V
t ≤ 300 µs, duty cycle d ≤ 2 % 2.5 V
IRM IF= 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C4A
trr VR= 100 V TJ = 100°C 100 ns
IF= 1 A; -di/dt = 100 A/µs; VR = 30 V 25 ns
RthJC 0.9 K/W
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© 2003 IXYS All rights reserved
IXGH 40N60B2D1
IXGT 40N60B2D1
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
30
60
90
120
150
180
210
01234567
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
5V
7V
9V
11V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
10
20
30
40
50
60
0.5 1 1.5 2 2.5 3
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
10
20
30
40
50
60
0.511.522.53
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (s at)
- Normalized
I
C
= 30A
I
C
= 15A
VGE = 15V
I
C
= 60A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Emitter voltage
1
1.5
2
2.5
3
3.5
4
567891011121314151617
V
G E
- Volts
V
C E
- Volts
T
J
= 25ºC
I
C
= 60A
30A
15A
Fig. 6. Input Admittance
0
30
60
90
120
150
180
345678910
V
G E
- Volts
I
C
- Amperes
T
J
= 125ºC
25ºC
-40ºC
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 40N60B2D1
IXGT 40N60B2D1
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 7. Transconductance
0
10
20
30
40
50
60
0 30 60 90 120 150 180
I
C
- Amperes
g
f s
- Siemens
T
J = -40ºC
25ºC
125ºC
Fig. 8. Dependence of Turn-Off
En e r g y o n R
G
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3 6 9 1215 1821242730
R
G
- Ohms
E
off
- milliJoules
IC = 15A
TJ = 125ºC
VGE = 15V
VCE = 400V
IC = 30A
IC = 60A
Fig. 9. Dependence of Turn-Off
En e r g y
on I
c
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
RG = 3.3Ω
VGE = 15V
VCE = 400V
TJ = 125ºC
TJ = 25ºC
Fig. 10. Dependence of Turn-Off
Energy on Temperature
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- milliJoules
IC = 60A
RG = 3.3Ω
VGE = 15V
VCE = 400V
IC = 30A
IC = 15A
Fig. 11. Dependence of Turn-Off
Sw itching Time on R
G
100
150
200
250
300
350
400
450
500
550
600
3 6 9 12151821242730
R
G
- Ohms
Switching Time - nanosecond
IC = 30A
t
d(off)
t
fi
- - - - - -
T
J = 125ºC
VGE = 15V
VCE = 400V
IC = 15A
IC = 60A
Fig. 12. Dependence of Turn-Off
Sw itching Tim e
on I
c
75
100
125
150
175
200
225
250
275
300
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
Switching Time - nanosecond
t
d(off)
t
fi
- - - - - -
RG = 3.3Ω
VGE = 15V
VCE = 400V
TJ = 125ºC
TJ = 25ºC
http://store.iiic.cc/
© 2003 IXYS All rights reserved
IXGH 40N60B2
IXGT 40N60B2
Fig. 14. Gate Charge
0
3
6
9
12
15
0 102030405060708090100
Q G - nanoCoulombs
VG E - Volts
V
CE
= 300V
I
C
= 30A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
VC E - Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Temperature
75
100
125
150
175
200
225
250
275
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Switching Time - nanosecond
td(off)
tfi -
- - - - -
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 16. Maxim um Trans ient Therm al Resistance
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
1 10 100 1000
Pulse Width - milliseconds
R (th) J C - (ºC/W)
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 40N60B2D1
IXGT 40N60B2D1
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
200 600 10000 400 800
60
70
80
90
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
VFR
diF/dt
V
200 600 10000 400 800
0
5
10
15
20
25
30
100 1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns tfr
ZthJC
A/µs
µs
DSEP 29-06
IF= 60A
IF= 30A
IF= 15A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 30A
Fig. 19. Peak reverse current IRM
versus -diF/dt
Fig. 18. Reverse recovery charge Qr
versus -diF/dt
Fig. 17. Forward current IF versus VF
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
Qr
IRM
Fig. 20. Dynamic parameters Qr, IRM
versus TVJ
Fig. 21. Recovery time trr versus -diF/dt Fig. 22. Peak forward voltage VFR and
tfr versus diF/dt
IF= 60A
IF= 30A
IF= 15A
tfr
VFR
Fig. 23. Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.502 0.0052
2 0.193 0.0003
3 0.205 0.0162
TVJ=25°C
TVJ=100°C
TVJ=150°C
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