"MICROSEMI CORP/ WATERTOWN SOE D COMPUTER DIODE General Purpose Switching FEATURES Metalurgical Bond e Low Capacitance Low Stored Charge ABSOLUTE MAXIMUM RATINGS, at 25C Reverse Breakdown Voltage, (at la = 5SyA) (MIN) wc cece cccce cee eeeneneneeeeeneeane 30V Peak Working Voltage ....-.ccccesecen ence eeureeneeneeerenes Average Rectified Current ......ceceeeenees Forward Steady-State DC Current Recurrent Peak Forward Current Peak Forward Surge Current (luS @ 1% Duty Cycle) Power Dissipation (with Heatsinking .250" from end of diode body) ma 9947963 OOlea72 THe MMUNIT 1N4727 7-03-09 DESCRIPTION This Unitrode very high speed silicon planar passivated epitaxial diode, is use- ful for computer circuits, high speed instru- mentation and general purpose applications. (O02 dO 500mW CC AS On 200mWw Linear Power Derating Factor Ambient Temperature between 25C and 125C ........cc cece eee e ene 3.0mW/C Ambient Temperature above 125C .....cccccereee cree e ee eeeteeeeeeeee 4.0mWw/C Operating Temperature. .......ecscceseeeuees . 65C to +175C Storage Temperature... cc ccc cece cece eee e erence nennaeertenens nes -65C to +200C ELECTRICAL SPECIFICATIONS (at 25C unless noted) 7 _ _ Forward Voltage Reverse Current Capacitance Stored Charge Limits Vr = 20V Va = 20V Vr = OV ip = 10mA le = 10mA Ta = 100C _f=1MHz ; Typ. 0.79V 0.02HA 3.0nA 1.5pf 24pC Max. 0.85V O.1pA 10.0uA 4.0pf 40pC MECHANICAL SPECIFICATIONS DO-35 a 5-28 SEMICONDUCTOR PRODUCTS mee UNITRODE